In situ effective clearance rate measurement of mangrove oysters (Crassostrea rhizophorae) in a tropical estuary in Brazil

2012 ◽  
Vol 12 (4) ◽  
pp. 301-310 ◽  
Author(s):  
Katarzyna Sroczyńska ◽  
Gilberto Barroso ◽  
Luís Chícharo
2021 ◽  
pp. 1-1
Author(s):  
Kaifeng Yin ◽  
Binquan Zhou ◽  
Jixi Lu ◽  
Fei Lu ◽  
Shaowen Zhang ◽  
...  

1986 ◽  
Vol 68 ◽  
Author(s):  
K. R. Padmanabhan ◽  
S. Bhowmick ◽  
R. Shaver ◽  
Zhang Zu Hua ◽  
J. C. Buchholz

AbstractIon backscattering and channeling techniques have been employed to measure the etching rate of amorphous and single crystal Si by XeF2 under similar conditions.Both (100) Si on sapphire and (111) Si on spinel showed higher etching rates compared to amorphous Si.However, measurements of the etching rate using a Si cell aligned to the axis and along the planes under similar conditions did not show appreciable difference in the etching rate compared to the etching rate with random orientation of the cell.Presence of the analyzing 4He+ beam during etching enhances the etching rate to twice the value when compared to post etching analysis with the same beam.The enhancement of the etching rate due to ion induced decomposition of XeF2 have been considered in the explanation of the experimental results.


2011 ◽  
Vol 28 (2) ◽  
pp. 581-586 ◽  
Author(s):  
Larissa Behr ◽  
Klaus Joeris ◽  
Mark Burnett ◽  
Thomas Scheper

2019 ◽  
Author(s):  
Bassam S. E. Aljohani ◽  
Moez Ben Houidi ◽  
Rafig Babayev ◽  
Khalid Aljohani ◽  
Bengt Johansson

1995 ◽  
Vol 406 ◽  
Author(s):  
T. L. Vincent ◽  
P. P. Khargonekar ◽  
F. L. Terry

AbstractThe goal of this paper is the presentation of a new algorithm for determining etch rate from single or multiple wavelength reflectometry data. This algorithm is based on techniques from recursive nonlinear estimation theory — Extended Kalman Filtering. A major advantage of our algorithm is extremely high speed. Consequently, it can be used in real-time feedback control applications. The speed advantage also makes it a suitable candidate for full wafer high speed etch rate measurement.


2016 ◽  
Author(s):  
S. Gürtler ◽  
M. Georges ◽  
C. Schikora

Sign in / Sign up

Export Citation Format

Share Document