Characteristics and Applications of Silicon Carbide Power Devices in Power Electronics

2010 ◽  
Vol 56 (3) ◽  
pp. 231-236 ◽  
Author(s):  
Nisha Kondrath ◽  
Marian Kazimierczuk
Keyword(s):  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Mechanical Strength ◽  
Power Electronics ◽  
High Temperatures ◽  
High Power ◽  
Power Devices ◽  
Paper Properties ◽  
High Mechanical Strength ◽  
Chemical Inertness

Characteristics and Applications of Silicon Carbide Power Devices in Power ElectronicsSilicon carbide materials, with its high mechanical strength, high thermal conductivity, ability to operate at high temperatures, and extreme chemical inertness to most of the electrolytes, are very attractive for high-power applications. In this paper, properties, advantages, and limitations of SiC and conventional Si materials are compared. Various applications, where SiC power devices are attractive, are discussed.

scholarly journals Silicon carbide power device characteristics, applications and challenges: an overview

2020 ◽  
Vol 11 (4) ◽  
pp. 2194
Author(s):  
Muhamad Faizal Yaakub ◽  
Mohd Amran Mohd Radzi ◽  
Faridah Hanim Mohd Noh ◽  
Maaspaliza Azri
Keyword(s):  
Silicon Carbide ◽  
System Design ◽  
Power Electronics ◽  
Power Density ◽  
High Power ◽  
System Performance ◽  
Power Device ◽  
Power Devices ◽  
Performance Limitation ◽  
Design Challenges

Silicon (Si) based power devices have been employed in most high power applications since decades ago. However, nowadays, most major applications demand higher efficiency and power density due to various reasons. The previously well-known Si devices, unfortunately, have reached their performance limitation to cover all those requirements. Therefore, Silicon Carbide (SiC) with its unique and astonishing characteristic has gained huge attention, particularly in the power electronics field. Comparing both, SiC presents a remarkable ability to enhance overall system performance and the transition from Si to SiC is crucial. With regard to its importance, this paper provides an overview of the characteristics, advantages, and outstanding capabilities in various application for SiC devices. Furthermore, it is also important to disclose the system design challenges, which are discussed at the end of the paper.

SiC Bipolar Power Devices

MRS Bulletin ◽  
2005 ◽  
Vol 30 (4) ◽  
pp. 299-304 ◽  
Author(s):  
T. Paul Chow
Keyword(s):  
Silicon Carbide ◽  
Power Electronics ◽  
High Voltage ◽  
High Power ◽  
Recent Progress ◽  
Future Trends ◽  
Market Demand ◽  
Power Devices ◽  
Power Switching ◽  
Schottky Rectifiers

AbstractThe successful commercialization of unipolar Schottky rectifiers in the 4H polytype of silicon carbide has resulted in a market demand for SiC high-power switching devices. This article reviews recent progress in the development of high-voltage 4H-SiC bipolar power electronics devices.We also present the outstanding material and processing challenges, reliability concerns, and future trends in device commercialization.

scholarly journals Thermal conductivity performance of nanoporous plate for high-power LED lighting and power electronics

2019 ◽  
Vol 1309 ◽  
pp. 012016
Author(s):  
A D Kurilov ◽  
V V Belyaev ◽  
K D Nessemon ◽  
E D Besprozvannyi ◽  
A O Osin ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Power Electronics ◽  
High Power ◽  
Led Lighting ◽  
High Power Led

Silicon carbide high-power devices

1996 ◽  
Vol 43 (10) ◽  
pp. 1732-1741 ◽  
Author(s):  
C.E. Weitzel ◽  
J.W. Palmour ◽  
C.H. Carter ◽  
K. Moore ◽  
K.K. Nordquist ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Power ◽  
Power Devices

scholarly journals Study of the Turning Nickel Base Alloy Pyromet® 31V (SAE HEV8)

2011 ◽  
Vol 278 ◽  
pp. 312-320 ◽  
Author(s):  
Marcos Valério Ribeiro ◽  
André Luís Habib Bahia
Keyword(s):  
Thermal Conductivity ◽  
Mechanical Strength ◽  
High Temperatures ◽  
Base Alloy ◽  
Production Costs ◽  
Machining Parameters ◽  
Nickel Base Alloy ◽  
Low Thermal Conductivity ◽  
Nickel Base ◽  
Coated Carbide

Considering the constant technological developments in the aeronautical, space, automotive, shipbuilding, nuclear and petrochemical fields, among others, the use of materials with high strength mechanical capabilities at high temperatures has been increasingly used. Among the materials that meet the mechanical strength and corrosion properties at temperatures around 815 °C one can find the nickel base alloy Pyromet® 31V (SAE HEV8). This alloy is commonly applied in the manufacturing of high power diesel engines exhaust valves where it is required high resistance to sulphide, corrosion and good resistance to creep. However, due to its high mechanical strength and low thermal conductivity its machinability is made difficult, creating major challenges in the analysis of the best combinations among machining parameters and cutting tools to be used. Its low thermal conductivity results in a concentration of heat at high temperatures in the interfaces of workpiece-tool and tool-chip, consequently accelerating the tools wearing and increasing production costs. This work aimed to study the machinability, using the carbide coated and uncoated tools, of the hot-rolled Pyromet® 31V alloy with hardness between 41.5 and 42.5 HRC. The nickel base alloy used consists essentially of the following components: 56.5% Ni, 22.5% Cr, 2,2% Ti, 0,04% C, 1,2% Al, 0.85% Nb and the rest of iron. Through the turning of this alloy we able to analyze the working mechanisms of wear on tools and evaluate the roughness provided on the cutting parameters used. The tests were performed on a CNC lathe machine using the coated carbide tool TNMG 160408-23 Class 1005 (ISO S15) and uncoated tools TNMG 160408-23 Class H13A (ISO S15). Cutting fluid was used so abundantly and cutting speeds were fixed in 75 and 90 m/min. to feed rates that ranged from 0.12, 0.15, 0.18 and 0.21 mm/rev. and cutting depth of 0.8mm. The results of the comparison between uncoated tools and coated ones presented a machined length of just 30% to the first in relation to the performance of the second. The coated tools has obtained its best result for both 75 and 90 m/min. with feed rate of 0.15 mm/rev. unlike the uncoated tool which obtained its better results to 0.12 mm/rev.

An SEM Investigation of Annealing Encapsulants for SiC

2000 ◽  
Vol 6 (S2) ◽  
pp. 1094-1095
Author(s):  
M. H. Ervin ◽  
K. A. Jones ◽  
M. A. Derenge ◽  
K. W. Kirchnef ◽  
M.C. Wood ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Silicon Carbide ◽  
High Temperature ◽  
High Power ◽  
Engine Oil ◽  
Robust Performance ◽  
Chemical Inertness ◽  
High Breakdown Electric Field ◽  
Sem Investigation ◽  
Temperature Applications

Advancing technology continues to place greater and greater demands on semiconductor devices. It is clear that Si technology alone will not be able to meet all of these demands. Silicon Carbide (SiC) is a promising material for highpower and high-temperature applications, such as SiC devices for controlling power in a more electric vehicle in which the SiC device is cooled by the engine oil (200 C.) SiC is well suited for high-power/temperature applications due to its large bandgap of 3.03 eV (for 6H), high breakdown electric field of 2.4 x 106 V/cm (again for 6H), thermal stability, and chemical inertness. These properties hold the promise of reliable and robust performance, but the latter two also present challenges to fabricating such devices. For instance, a key part of making devices involves selected area doping. This is typically accomplished with ion implantation, because the rate of diffusion is so low, followed with an anneal to remove the implant damage and electrically activate the dopant.

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