SiC Bipolar Power Devices
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AbstractThe successful commercialization of unipolar Schottky rectifiers in the 4H polytype of silicon carbide has resulted in a market demand for SiC high-power switching devices. This article reviews recent progress in the development of high-voltage 4H-SiC bipolar power electronics devices.We also present the outstanding material and processing challenges, reliability concerns, and future trends in device commercialization.
2020 ◽
Vol 11
(4)
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pp. 2194
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2014 ◽
Vol 778-780
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pp. 1077-1082
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2010 ◽
Vol 56
(3)
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pp. 231-236
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1996 ◽
Vol 43
(10)
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pp. 1732-1741
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2006 ◽
Vol 527-529
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pp. 1449-1452
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