Study on thermal degradation of high power LEDs during high temperature and electrical aging

2014 ◽  
Author(s):  
Fei Yuan ◽  
Kailin Pan ◽  
Tao Lu ◽  
Xin Wang ◽  
Bin Zhou
Keyword(s):  
High Temperature ◽  
Thermal Degradation ◽  
High Power ◽  
Electrical Aging

Extreme Service Packaging for Silicon Carbide Electronic Devices

2004 ◽  
Vol 815 ◽  
Author(s):  
Maxime J. F. Guinel ◽  
Diego Rodriguez-Marek ◽  
M. Grant Norton ◽  
Robert B. Davis ◽  
David F. Bahr
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Thermal Degradation ◽  
Single Crystal ◽  
Power Electronics ◽  
High Power ◽  
Electronic Devices ◽  
Good Choice ◽  
Harsh Environments ◽  
Single Crystal Sic

AbstractElectronic devices based on single crystal SiC represent a good choice for a variety of new high temperature, high power electronics applications. The challenge is to develop a package that is resistant to thermal degradation in harsh environments. Conditions are extreme and this all but rules out only a handful of materials and materials systems. Polycrystalline SiC is the material that we have chosen to study as a suitable package and materials suitability/compatibility has been considered on several levels.

Analysis on High Temperature Characteristic of High Power Semiconductor Laser Array

2020 ◽  
Vol 41 (9) ◽  
pp. 1158-1164
Author(s):  
Bo LI ◽  
◽  
Zhen-fu WANG ◽  
Bo-cang QIU ◽  
Guo-wen YANG ◽  
...  
Keyword(s):  
High Temperature ◽  
Semiconductor Laser ◽  
High Power ◽  
Temperature Characteristic ◽  
Laser Array ◽  
Power Semiconductor

SiC – a semiconductor for high-power, high-temperature and high-frequency devices

1994 ◽  
Vol T54 ◽  
pp. 283-290 ◽  
Author(s):  
E Janzén ◽  
O Kordina ◽  
A Henry ◽  
W M Chen ◽  
N T Son ◽  
...  
Keyword(s):  
High Temperature ◽  
High Power ◽  
High Frequency ◽  
High Frequency Devices

scholarly journals High-temperature and high-power terahertz quantum-cascade lasers

2007 ◽  
Author(s):  
Benjamin S. Williams ◽  
Qi Qin ◽  
Sushil Kumar ◽  
Qing Hu ◽  
John L. Reno
Keyword(s):  
High Temperature ◽  
High Power ◽  
Quantum Cascade Lasers ◽  
Quantum Cascade ◽  
Cascade Lasers

Assembly and packaging technologies for high-temperature and high-power GaN HEMTs

2014 ◽  
Author(s):  
A. A. Bajwa ◽  
Y. Qin ◽  
J. Wilde ◽  
R. Reiner ◽  
P. Waltereit ◽  
...  
Keyword(s):  
High Temperature ◽  
High Power ◽  
Gan Hemts

Physical Properties of SiC

MRS Bulletin ◽  
1997 ◽  
Vol 22 (3) ◽  
pp. 25-29 ◽  
Author(s):  
W.J. Choyke ◽  
G. Pensl
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Physical Properties ◽  
Chemical Bond ◽  
High Power ◽  
National Program ◽  
High Radiation ◽  
Electrical Switching ◽  
Oil Drilling ◽  
Drilling Technology

While silicon carbide has been an industrial product for over a century, it is only now emerging as the semiconductor of choice for high-power, high-temperature, and high-radiation environments. From electrical switching and sensors for oil drilling technology to all-electric airplanes, SiC is finding a place which is difficult to fill with presently available Si or GaAs technology. In 1824 Jöns Jakob Berzelius published a paper which suggested there might be a chemical bond between the elements carbon and silicon. It is a quirk of history that he was born in 1779 in Linköping, Sweden where he received his early education, and now, 172 years later, Linkoping University is the center of a national program in Sweden to study the properties of SiC as a semiconductor.

scholarly journals Carbonization and Treatment the High Temperature Distortion of Thoriated Tungsten Cathode for High Power Electronic Tubes

2009 ◽  
Vol 6 (4) ◽  
pp. 763-769
Author(s):  
Baghdad Science Journal
Keyword(s):  
High Temperature ◽  
High Power ◽  
Vacuum Chamber ◽  
Optical Pyrometer ◽  
Power Electronic ◽  
Heat Treated ◽  
Pressure Time ◽  
Thoriated Tungsten ◽  
Distortion Effect ◽  
Different Diameters

A metal mandrel was designed for manufacturing the cathodes of high power electron tube ( Tetrode ) used in broadcasting transmitting tubes type TH558 and CQS200.The cathodes were manufactured in the present work from thoriated tungsten wires ( 2? ThO2- W) with different diameters .These cathodes were carbonized in sequences of processes to determine the carbonization parameters (temperature, pressure, time, current and voltage).Then the carbonized cathodes dimension were accurately measured to determine the deviation due to the high temperature distortion effect at about 1800°C .the distorted cathodes due to the carbonization process was treated when it was subjected inside the vacuum chamber and heat treated again .The carbonized cathode distortions as a function of temperature were measured in the range of (1500°C-1800°C).The temperature was determined using an optical pyrometer and also calculated using Stephan's-Boltzmann relation.

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