Extreme Service Packaging for Silicon Carbide Electronic Devices

2004 ◽  
Vol 815 ◽  
Author(s):  
Maxime J. F. Guinel ◽  
Diego Rodriguez-Marek ◽  
M. Grant Norton ◽  
Robert B. Davis ◽  
David F. Bahr
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Thermal Degradation ◽  
Single Crystal ◽  
Power Electronics ◽  
High Power ◽  
Electronic Devices ◽  
Good Choice ◽  
Harsh Environments ◽  
Single Crystal Sic

AbstractElectronic devices based on single crystal SiC represent a good choice for a variety of new high temperature, high power electronics applications. The challenge is to develop a package that is resistant to thermal degradation in harsh environments. Conditions are extreme and this all but rules out only a handful of materials and materials systems. Polycrystalline SiC is the material that we have chosen to study as a suitable package and materials suitability/compatibility has been considered on several levels.

scholarly journals Review of Modern Three-Dimensional Integration Technologies and Analysis of Prospects of Their Use for High Power Micro-Assemblies

2018 ◽  
Vol 9 (1) ◽  
pp. 198
Author(s):  
A.V. Sukhanov ◽  
A.I Artemova ◽  
R.S Litvinenko
Keyword(s):  
Power Electronics ◽  
High Power ◽  
Electronic Devices ◽  
Three Dimensional ◽  
Harsh Environments ◽  
Basic Principles ◽  
Advantages And Disadvantages

<p>The new miniaturization technologies of electronic devices find extensive application in the design for any industry, whether it is civil electronics or appliances designed to operate in harsh environments. This article presents an overview of prospective technologies of three-dimensional integration at substrates level for use in the field of power electronics. The review describes the basic principles of three-dimensional integration technologies, their applicability for manufacturing electronic devices, the main advantages and disadvantages.</p>

Physical Properties of SiC

MRS Bulletin ◽  
1997 ◽  
Vol 22 (3) ◽  
pp. 25-29 ◽  
Author(s):  
W.J. Choyke ◽  
G. Pensl
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Physical Properties ◽  
Chemical Bond ◽  
High Power ◽  
National Program ◽  
High Radiation ◽  
Electrical Switching ◽  
Oil Drilling ◽  
Drilling Technology

While silicon carbide has been an industrial product for over a century, it is only now emerging as the semiconductor of choice for high-power, high-temperature, and high-radiation environments. From electrical switching and sensors for oil drilling technology to all-electric airplanes, SiC is finding a place which is difficult to fill with presently available Si or GaAs technology. In 1824 Jöns Jakob Berzelius published a paper which suggested there might be a chemical bond between the elements carbon and silicon. It is a quirk of history that he was born in 1779 in Linköping, Sweden where he received his early education, and now, 172 years later, Linkoping University is the center of a national program in Sweden to study the properties of SiC as a semiconductor.

Single Crystalline 4H-SiC MEMS Devices with N-P-N Epitaxial Structure

2014 ◽  
Vol 1693 ◽  
Author(s):  
Feng Zhao ◽  
Allen Lim ◽  
Zhibang Chen ◽  
Chih-Fang Huang
Keyword(s):  
Single Crystal ◽  
Electronic Devices ◽  
Device Fabrication ◽  
Flat Band ◽  
Harsh Environment ◽  
Mems Devices ◽  
Etching Technique ◽  
Epitaxial Structure ◽  
Single Crystal Sic ◽  
P Type

ABSTRACTIn this paper, single crystal 4H-SiC MEMS devices with n-p-n epitaxial structure was fabricated. A dopant-selective photoelectrochemical etching technique was applied to etch the sacrificial p-type SiC layer to release n-type SiC suspended structures on n-type SiC substrate. The selective etching was achieved by applying a bias which employs the different flat-band potentials of n-SiC and p-SiC in KOH solution. Such MEMS devices have the potential to fully exploit the superior properties of single crystal SiC for harsh environment operation, as well as mature epitaxial growth and device fabrication of 4H-SiC. The n-p-n structure, together with the previously reported p-n structure, extends the capability of monolithic integration between MEMS with electronic devices and circuits on SiC platform.

Ion Implantation and Annealing Effects in Silicon Carbide

1996 ◽  
Vol 438 ◽  
Author(s):  
V. Heera ◽  
W. Skorupa
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Ion Implantation ◽  
High Power ◽  
High Frequency ◽  
Ion Beam ◽  
Surface Erosion ◽  
Annealing Effects ◽  
Ion Ranges ◽  
Induced Crystallization

AbstractSiC is a promising semiconductor material for high-power/high-frequency and hightemperature electronic applications. For selective doping of SiC ion implantation is the only possible process. However, relatively little is known about ion implantation and annealing effects in SiC. Compared to ion implantation into Si there is a number of specific features which have to be considered for successful ion beam processing of SiC. A brief review is given on some aspects of ion implantation in and annealing of SiC. The ion implantation effects in SiC are discussed in direct comparison to Si. The following issues are addressed: ion ranges, radiation damage, amorphization, high temperature implantation, ion beim induced crystallization and surface erosion.

Understanding High Temperature Static and Dynamic Characteristics of 1.2 kV SiC Power MOSFETs

2017 ◽  
Vol 897 ◽  
pp. 501-504 ◽  
Author(s):  
Si Yang Liu ◽  
Yi Fan Jiang ◽  
Woong Je Sung ◽  
Xiao Qing Song ◽  
B. Jayant Baliga ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Dynamic Characteristics ◽  
Analytical Models ◽  
Harsh Environments ◽  
Device Physics ◽  
Dynamic Parameters ◽  
Power Mosfets ◽  
Static And Dynamic Characteristics ◽  
Temperature Capability

High temperature capability of silicon carbide (SiC) power MOSFETs is becoming more important as power electronics faces wider applications in harsh environments. In this paper, comprehensive static and dynamic parameters of 1.2 kV SiC MOSFETs have been measured up to 250°C. The electrical behaviors with the temperature have been analyzed using the basic device physics and analytical models.

Culture of Mammalian Cells on Single Crystal SiC Substrates

2006 ◽  
Vol 950 ◽  
Author(s):  
Camilla Coletti ◽  
Mark J. Jaroszeski ◽  
Andrew M. Hoff ◽  
Stephen E. Saddow
Keyword(s):  
Silicon Carbide ◽  
Single Crystal ◽  
Mammalian Cells ◽  
Crystalline Silicon ◽  
Si Substrates ◽  
Diphenyltetrazolium Bromide ◽  
Standard Culture ◽  
Single Crystal Sic ◽  
Biological World

ABSTRACTCrystalline silicon carbide (SiC) has the potential to become an important biomaterial and a versatile interface between the electronic and biological world. In this work, single crystal SiC biocompatibility is investigated by culturing mammalian cells directly on SiC substrates. The cell morphology and the quality of the cell adhesion have been studied using fluorescence microscopy, while MTT [3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide] assays have been performed to quantify cell viability and number. Standard culture-wells and silicon (Si) substrates were used as controls in the final assessment of crystalline SiC biocompatibility.

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