scholarly journals TUNABLE PERIODIC MICROSTRIP STRUCTURE ON GAAS WAFER

2009 ◽  
Vol 97 ◽  
pp. 1-10 ◽  
Author(s):  
Ladislau Matekovits ◽  
Michale Heimlich ◽  
Karu P. Esselle
Keyword(s):  
Gaas Wafer ◽  
Microstrip Structure

Charging microscopy and cathodoluminescence imaging of semi-insulating gallium arsenide

1986 ◽  
Vol 44 ◽  
pp. 816-817
Author(s):  
T.C. Sheu ◽  
S. Myhajlenko ◽  
D. Davito ◽  
J.L. Edwards ◽  
R. Roedel ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Secondary Electron ◽  
Crystal Defects ◽  
Device Performance ◽  
Gaas Wafer ◽  
Surface Charging ◽  
Gaas Substrates ◽  
Voltage Contrast ◽  
Cathodoluminescence Imaging ◽  
Scanning Electron

Liquid encapsulated Czochralski (LEC) semi-insulating (SI) GaAs has applications in integrated optics and integrated circuits. Yield and device performance is dependent on the homogeniety of the wafers. Therefore, it is important to characterise the uniformity of the GaAs substrates. In this respect, cathodoluminescence (CL) has been used to detect the presence of crystal defects and growth striations. However, when SI GaAs is examined in a scanning electron microscope (SEM), there will be a tendency for the surface to charge up. The surface charging affects the backscattered and secondary electron (SE) yield. Local variations in the surface charge will give rise to contrast (effectively voltage contrast) in the SE image. This may be associated with non-uniformities in the spatial distribution of resistivity. Wakefield et al have made use of “charging microscopy” to reveal resistivity variations across a SI GaAs wafer. In this work we report on CL imaging, the conditions used to obtain “charged” SE images and some aspects of the contrast behaviour.

Optimisation of the epi-ready semi-insulating GaAs wafer preparation procedure

Vacuum ◽  
2003 ◽  
Vol 72 (3) ◽  
pp. 217-223 ◽  
Author(s):  
Dominika Sadowska ◽  
Andrzej Gładki ◽  
Krystyna Mazur ◽  
Ewa Talik
Keyword(s):  
Preparation Procedure ◽  
Gaas Wafer

High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

2015 ◽  
Vol 107 (26) ◽  
pp. 261107 ◽  
Author(s):  
Zihao Wang ◽  
Ruizhe Yao ◽  
Stefan F. Preble ◽  
Chi-Sen Lee ◽  
Luke F. Lester ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Dot ◽  
Wafer Bonding ◽  
High Performance ◽  
Silicon Substrates ◽  
Quantum Dot Lasers ◽  
Gaas Wafer ◽  
Inas Quantum Dot

scholarly journals Effect of the defected microstrip structure shapes on the performance of dual-band bandpass filter for wireless communications

2021 ◽  
Vol 10 (1) ◽  
pp. 232-240
Author(s):  
Mussa Mabrok ◽  
Zahriladha Zakaria ◽  
Yully Erwanti Masrukin ◽  
Tole Sutikno ◽  
Hussein Alsariera
Keyword(s):  
Wireless Communication ◽  
Communication Systems ◽  
Bandpass Filter ◽  
Dual Band ◽  
Center Frequency ◽  
Wireless Communication Systems ◽  
Notch Band ◽  
Quarter Wavelength ◽  
Crucial Component ◽  
Microstrip Structure

Due to the progression growth of multiservice wireless communication systems in a single device, multiband bandpass filter has attract a great attention to the end user. Therefore, multiband bandpass filter is a crucial component in the multiband transceivers systems which can support multiple services in one device. This paper presents a design of dual-band bandpass filter at 2.4 GHz and 3.5 GHz for WLAN and WiMAX applications. Firstly, the wideband bandpass filter is designed at a center frequency of 3 GHz based on quarter-wavelength short circuited stub. Three types of defected microstrip structure (DMS) are implemented to produce a wide notch band, which are T-inversed shape, C-shape, and U- Shape. Based on the performance comparisons, U-shaped DMS is selected to be integrated with the bandpass filter. The designed filter achieved two passbands centered at 2.51 GHz and 3.59 GHz with 3 dB bandwidth of 15.94 % and 15.86 %. The proposed design is very useful for wireless communication systems and its applications such as WLAN and WiMAX 

High-temperature healing of interfacial voids in GaAs wafer bonding

2002 ◽  
Vol 91 (4) ◽  
pp. 1973-1977 ◽  
Author(s):  
YewChung Sermon Wu ◽  
Po Chun Liu ◽  
R. S. Feigelson ◽  
R. K. Route
Keyword(s):  
High Temperature ◽  
Wafer Bonding ◽  
Gaas Wafer
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