scholarly journals CALCULATION OF ELECTRONIC STRUCTURE OF 2D NaAu INTERMETALLIC LAYERS

2021 ◽  
pp. 475-482
Author(s):  
Юрий Александрович Кузнецов ◽  
Михаил Николаевич Лапушкин
Keyword(s):  
Electronic Structure ◽  
Intermetallic Compound ◽  
Band Gap ◽  
Valence Band ◽  
Conduction Band ◽  
Density Of States ◽  
Intermetallic Layers

Проведен расчет плотности состояний различной толщины 2D -слоев интерметаллида NaAu. 2D -слоев интерметаллида NaAu моделировались суперячейки NaAu (111) 2 х 2 х 2. Для монослойного 2D -слоя интерметаллида NaAu установлено наличие запрещенной зоны с шириной 1,87 эВ. Увеличение толщины толщины 2D -слоев интерметаллида NaAu до двух монослоев показал уменьшение ширины запрещенной зоны до 0,81эВ. Дальнейшее увеличение толщины 2D -слоев интерметаллида NaAu приводит к исчезновению запрещенной зоны, что указывает на переход полупроводник - металл для 2D -слоя интерметаллида NaAu толщиной три монослоя. Валентная зона 2D -слоя интерметаллида NaAu сформирована в основном Au 5d электронами, с незначительным вкладом Au 6s и Au 6p электронов. Зона проводимости NaAu образована в основном Au 6р электронами с незначительным вкладом электронов Na 3 s . The calculation of the density of states of various thicknesses of the 2D -layers of the intermetallic compound has been carried out. 2D -layers of intermetallic compound NaAu are simulated by supercells NaAu (111) 2 x 2 x 2. For a monolayer 2D -layer of an intermetallic compound NaAu the presence of a bandgap with a width of 1,87 eV has been established. An increase in the thickness of the 2D -layers of the intermetallic compound NaAu to two monolayers showed a decrease in the bandgap to 0,81 eV. A further increase in the thickness of the 2D -layers of the intermetallic compound NaAu leads to the disappearance of the band gap, which indicates a semiconductor-metal transition for the 2D -layer of the intermetallic compound NaAu with a thickness of three monolayers. The valence band of the 2D -layer of the intermetallic compound NaAu is formed mainly by Au 5d electrons, with an insignificant contribution from Au 6s and Au 6p electrons. The conduction band of NaAu is formed mainly by Au 6p electrons with an insignificant contribution of electrons Na 3s .

scholarly journals Ab initioStudies of Electronic Structure of Defects in PbTe

2005 ◽  
Vol 864 ◽  
Author(s):  
Salameh Ahmad ◽  
Daniel Bilc ◽  
S.D. Mahanti ◽  
M.G. Kanatzidis
Keyword(s):  
Electronic Structure ◽  
Valence Band ◽  
Conduction Band ◽  
Density Of States ◽  
Resonance State ◽  
Interesting Case ◽  
The Other ◽  
Defect States ◽  
Strong Resonance ◽  
Structure Calculations

AbstractAb initioelectronics structure calculations have been carried out in a series of RPb2n-1Te2n, n=16, compounds to understand the nature of “defect” states introduced by R where R = vacancy, monovalent Na, K, Rb, Cs, Ag atoms and divalent Cd atoms. We find that the density of states (DOS) near the top of the valence band and the bottom of the conduction band get significantly modified. The Na atom seems to perturb this region least (ideal acceptor in PbTe) and the other monovalent atoms enhance the DOS near the top of the valence band. Cd is an interesting case, since it introduces a strong resonance state near the bottom of the conduction band.

First-Principles Calculations on the Electronic Structure of ZnO Nanowires

2012 ◽  
Vol 198-199 ◽  
pp. 23-27
Author(s):  
Nan Zhang ◽  
Hong Sheng Zhao ◽  
Dong Yang ◽  
Wen Jie Yan
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Valence Band ◽  
Conduction Band ◽  
First Principles ◽  
Density Functional ◽  
Valence Band Maximum ◽  
Zno Nanowires ◽  
Cross Sectional ◽  
Quantum Size

Based upon the density functional theory (DFT) in this paper, the first-principles approach is used to study the electronic structure of different cross-sectional diameters of ZnO [0001] nanowires of wurtzite structure. The results show that ZnO [0001] nanowires have a wide direct band gap. Located in the G-point of the Brillouin zone the conduction band minimum and valence band maximum are relatively smooth. The conduction band is mainly composed of Zn 4s and Zn 4p states, and the valence band is composed of Zn 3d and O 2p states. The effective mass of conduction band electrons and valence band holes are large while their mobility is very low which show that conductive ability of pure defect-free [0001] ZnO nanowires is weak. Along with the increase of the cross-sectional diameters, the band gap gradually decreases that indicates quantum size effects are obvious in the nano size range.

X-ray Spectroscopic Studies of the Bulk Electronic Structure of InGaN Alloys

2002 ◽  
Vol 743 ◽  
Author(s):  
Cormac McGuinness ◽  
James E. Downes ◽  
Philip Ryan ◽  
Kevin E. Smith ◽  
Dharanipal Doppalapudi ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Valence Band ◽  
Absorption Spectra ◽  
Conduction Band ◽  
Partial Density ◽  
Significant Shift ◽  
Band Shift ◽  
X Ray ◽  
X Ray Absorption

ABSTRACTSynchrotron radiation excited soft x-ray emission and soft x-ray absorption spectroscopies are applied to the study of the electronic structure of InxGa1-xN alloys with (0 ≤ x ≤ 0.29). The elementally resolved partial density of states of the valence and conduction bands may be measured using these spectroscopies. The x-ray absorption spectra indicate that the conduction band broadens considerably with increasing indium incorporation. The band gap evolution as a function of indium content derives primarily from this broadening of the conduction band states. The emission spectra indicate that motion of the valence band makes a smaller contribution to the evolution of the band gap. This gap evolution differs from previous studies on the AlxGa1-xN alloy system, which observed a linear valence band shift through the series (0 < x < 1). Instead in the case of InxGa1-xN the valence band exhibits a significant shift between x = 0 and x = 0.1 with minimal movement thereafter. Furthermore, evidence of In 4d -N 2p and Ga 3d- N 2p hybridisation is reported. Finally, the thermal stability of an In011Ga089N film was investigated. Both emission and absorption spectra were found to have a temperature dependent shift in energy, but the overall definition of the spectra was unaltered even at annealing temperatures well beyond the growth temperature of the film.

The semiconductor-electrolyte interface

1996 ◽  
Author(s):  
Wolfgang Schmickler
Keyword(s):  
Electronic Structure ◽  
Fermi Level ◽  
Band Gap ◽  
Electric Current ◽  
Valence Band ◽  
Conduction Band ◽  
Electronic States ◽  
Electrochemical Reactions ◽  
Electrochemical Interface ◽  
Semiconductor Chips

Many naturally occurring substances, in particular the oxide films that form spontaneously on some metals, are semiconductors. Also, electrochemical reactions are used in the production of semiconductor chips, and recently semiconductors have been used in the construction of electrochemical photocells. So there are good technological reasons to study the interface between a semiconductor and an electrolyte. Our main interest, however, lies in more fundamental questions: How does the electronic structure of the electrode influence the properties of the electrochemical interface, and how does it affect electrochemical reactions? What new processes can occur at semiconductors that are not known from metals? We begin by recapitulating a few facts about semiconductors. Electronic states in a perfect semiconductor are delocalized just as in metals, and there are bands of allowed electronic energies. According to a well-known theorem, bands that are either completely filled or completely empty do not contribute to the conductivity. In semiconductors the current-carrying bands do not overlap as they do in metals; they are separated by the band gap, and the Fermi level lies right in this gap. The band below the Fermi level, which at T = 0 is completely filled, is known as the valence band; the band above, which is empty at T = 0, is the conduction band. In a pure or intrinsic semiconductor, the Fermi level is close to the center of the band gap. At room temperature a few electrons are excited from the valence into the conduction band, leaving behind electron vacancies or holes (denoted by h+). The electric current is carried by electrons in the conduction band and holes in the valence band. The concentrations nc of the conduction electrons and pv of the holes are determined from Fermi statistics.

First principles study of electronic structures of dopants in Mg2Si

2011 ◽  
Vol 1329 ◽  
Author(s):  
K. Xiong ◽  
S. Sobhani ◽  
R. P. Gupta ◽  
W. Wang ◽  
B. E. Gnade ◽  
...  
Keyword(s):  
Band Gap ◽  
Valence Band ◽  
Conduction Band ◽  
Density Of States ◽  
First Principles ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Hybrid Functional ◽  
Thermoelectric Efficiency ◽  
The Impact

ABSTRACTWe investigate the impact of various dopants (Na, Ag, Cd, Zn, Al, Ga, In, Tl, Ge, and Sn) on the electronic structure of Mg2Si by first principles calculations using a hybrid functional that does not need a band gap correction. We find that for Na and Ge in Mg2Si, the impurity-induced states do not affect the density of states at both edges of the valence band and the conduction band. Ag- and Sn affect slightly the density of states at the valence band edge, while Cd and Zn affect slightly the density of state at the conduction band edge. Al and In could modify significantly the density of states at the conduction band edge. Ga introduces states just at the bottom of the conduction band. Tl introduces states in the band gap. This study provides useful information on optimizing the thermoelectric efficiency of Mg2Si.

First-principle calculation of the electronic structure, DOS and effective mass TlInSe2

2017 ◽  
Vol 31 (14) ◽  
pp. 1750155 ◽  
Author(s):  
N. A. Ismayilova ◽  
G. S. Orudzhev ◽  
S. H. Jabarov
Keyword(s):  
Electronic Structure ◽  
Effective Mass ◽  
Valence Band ◽  
Conduction Band ◽  
Density Of States ◽  
Valence Band Maximum ◽  
First Principle ◽  
Band Maximum ◽  
Effective Masses ◽  
Structure Density

The electronic structure, density of states (DOS), effective mass are calculated for tetragonal TlInSe2 from first principle in the framework of density functional theory (DFT). The electronic structure of TlInSe2 has been investigated by Quantum Wise within GGA. The calculated band structure by Hartwigsen–Goedecker–Hutter (HGH) pseudopotentials (psp) shows both the valence band maximum and conduction band minimum located at the T point of the Brillouin zone. Valence band maximum at the T point and the surrounding parts originate mainly from 6s states of univalent Tl ions. Bottom of the conduction band is due to the contribution of 6p-states of Tl and 5s-states of In atoms. Calculated DOS effective mass for holes and electrons are [Formula: see text], [Formula: see text], respectively. Electron effective masses are fairly isotropic, while the hole effective masses show strong anisotropy. The calculated electronic structure, density of states and DOS effective masses of TlInSe2 are in good agreement with existing theoretical and experimental results.

A STUDY ON STRAIN AFFECTING ELECTRONIC STRUCTURE OF WURTZITE ZnO BY FIRST PRINCIPLES

2009 ◽  
Vol 23 (19) ◽  
pp. 2339-2352 ◽  
Author(s):  
LI BIN SHI ◽  
SHUANG CHENG ◽  
RONG BING LI ◽  
LI KANG ◽  
JIAN WEI JIN ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Electronic Structure ◽  
Band Structure ◽  
Valence Band ◽  
Density Of States ◽  
First Principles ◽  
Density Functional ◽  
Functional Theory ◽  
Electron Density Difference ◽  
Different Strains

Density of states and band structure of wurtzite ZnO are calculated by the CASTEP program based on density functional theory and plane-wave pseudopotential method. The calculations are carried out in axial and unaxial strains, respectively. The results of density of states in different strains show that the bottom of the conduction band is always dominated by Zn 4s, and the top of valence band is always dominated by O 2p. The variation of the band gap calculated from band structure is also discussed. In addition, p-d repulsion is used in investigating the variation of the top of the valence band in different strains and the results can be verified by electron density difference.

Bulk and Surface Electronic Structure of GaN Measured Using Angle-Resolved Photoemission, Soft X-ray Emission and Soft X-ray Absorption

1996 ◽  
Vol 449 ◽  
Author(s):  
Kevin E. Smith ◽  
Sarnjeet S Dhesi ◽  
Laurent-C. Duda ◽  
Cristian B Stagarescu ◽  
J. H. Guo ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Valence Band ◽  
Absorption Spectra ◽  
Conduction Band ◽  
Brillouin Zone ◽  
Emission Spectra ◽  
Partial Density ◽  
High Symmetry ◽  
X Ray ◽  
X Ray Absorption

ABSTRACTThe electronic structure of thin film wurtzite GaN has been studied using a combination of angle resolved photoemission, soft x-ray absorption and soft x-ray emission spectroscopies. We have measured the bulk valence and conduction band partial density of states by recording Ga L- and N K- x-ray emission and absorption spectra. We compare the x-ray spectra to a recent ab initio calculation and find good overall agreement. The x-ray emission spectra reveal that the top of the valence band is dominated by N 2p states, while the x-ray absorption spectra show the bottom of the conduction band as a mixture of Ga 4s and N 2p states, again in good agreement with theory. However, due to strong dipole selection rules we can also identify weak hybridization between Ga 4s- and N 2p-states in the valence band. Furthermore, a component to the N K-emission appears at approximately 19.5 eV below the valence band maximum and can be identified as due to hybridization between N 2p and Ga 3d states. We report preliminary results of a study of the full dispersion of the bulk valence band states along high symmetry directions of the bulk Brillouin zone as measured using angle resolved photoemission. Finally, we tentatively identify a non-dispersive state at the top of the valence band in parts of the Brillouin zone as a surface state.

Electronic Structure and Magnetic Properties of Iron Doped TiO2 (Rutile): XPS Measurements and CPA Calculations

2014 ◽  
Vol 215 ◽  
pp. 28-34 ◽  
Author(s):  
Michael A. Korotin ◽  
Nikolay A. Skorikov ◽  
Ernst Z. Kurmaev ◽  
Dmitry A. Zatsepin ◽  
Seif O. Cholakh
Keyword(s):  
Magnetic Properties ◽  
Electronic Structure ◽  
Band Gap ◽  
Valence Band ◽  
Coherent Potential Approximation ◽  
Photoelectron Spectra ◽  
Cation Substitution ◽  
Spectral Features ◽  
Potential Approximation ◽  
X Ray

X-ray photoelectron spectra of TiO2:Fe are measured. Electronic structure and magnetic properties of rutile doped by iron are calculated in frames of the coherent potential approximation. The main experimental spectral features of TiO2:Fe such as heterovalent cation substitution (Fe3+→Ti4+), decreasing of the band gap value and appearance of additional features at the bottom and top of X-ray photoelectron spectra of valence band in comparison with those for undoped TiO2 are described.

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