CALCULATION OF ELECTRONIC STRUCTURE OF 2D NaAu INTERMETALLIC LAYERS

Проведен расчет плотности состояний различной толщины 2D -слоев интерметаллида NaAu. 2D -слоев интерметаллида NaAu моделировались суперячейки NaAu (111) 2 х 2 х 2. Для монослойного 2D -слоя интерметаллида NaAu установлено наличие запрещенной зоны с шириной 1,87 эВ. Увеличение толщины толщины 2D -слоев интерметаллида NaAu до двух монослоев показал уменьшение ширины запрещенной зоны до 0,81эВ. Дальнейшее увеличение толщины 2D -слоев интерметаллида NaAu приводит к исчезновению запрещенной зоны, что указывает на переход полупроводник - металл для 2D -слоя интерметаллида NaAu толщиной три монослоя. Валентная зона 2D -слоя интерметаллида NaAu сформирована в основном Au 5d электронами, с незначительным вкладом Au 6s и Au 6p электронов. Зона проводимости NaAu образована в основном Au 6р электронами с незначительным вкладом электронов Na 3 s . The calculation of the density of states of various thicknesses of the 2D -layers of the intermetallic compound has been carried out. 2D -layers of intermetallic compound NaAu are simulated by supercells NaAu (111) 2 x 2 x 2. For a monolayer 2D -layer of an intermetallic compound NaAu the presence of a bandgap with a width of 1,87 eV has been established. An increase in the thickness of the 2D -layers of the intermetallic compound NaAu to two monolayers showed a decrease in the bandgap to 0,81 eV. A further increase in the thickness of the 2D -layers of the intermetallic compound NaAu leads to the disappearance of the band gap, which indicates a semiconductor-metal transition for the 2D -layer of the intermetallic compound NaAu with a thickness of three monolayers. The valence band of the 2D -layer of the intermetallic compound NaAu is formed mainly by Au 5d electrons, with an insignificant contribution from Au 6s and Au 6p electrons. The conduction band of NaAu is formed mainly by Au 6p electrons with an insignificant contribution of electrons Na 3s .

Effect of Aging on the Properties of Intermetallic Layers in SAC+Bi Solder Joints

A major problem faced by electronic packaging industries is the poor reliability of lead free solder joints. One of the most common methods utilized to tackle this problem is by doping the alloy with other elements, especially bismuth. Researches have shown Bismuth doped solder joints to mostly fail near the Intermetallic (IMC) layer rather than the bulk of the solder joint as commonly observed in traditional SAC305 solder joints. An understanding of the properties of this IMC layer would thus provide better solutions on improving the reliability of bismuth doped solder joints. In this study, the authors have used three different lead free solders doped with 1%, 2% and 3% bismuth. Joints of these alloys were created on copper substrates. The joints were then polished to clearly expose the IMC layers. These joints were then aged at 125 °C for 0, 1, 2, 5 and 10 days. For each aging condition, the elastic modulus and the hardness of the IMC layers were evaluated using a nanoindenter. The IMC layer thickness and the chemical composition of the IMC layers were also determined for each alloy at every aging condition using Scanning Electron Microscopy (SEM) and EDS. The results from this study will give a better idea on how the percentage of bismuth content in lead free solder affects the IMC layer properties and the overall reliability of the solder joints.

Influence of 1.5 wt.% Bi on the Microstructure, Hardness, and Shear Strength of Sn-0.7Cu Solder Joints after Isothermal Annealing

This manuscript reports the isothermal annealing effect on the mechanical and microstructure characteristics of Sn-0.7Cu-1.5Bi solder joints. A detailed microstructure observation was carried out, including measuring the activation energy of the intermetallic compound (IMC) layer of the solder joints. Additionally, the synchrotron µX-ray fluorescence (XRF) method was adopted to precisely explore the elemental distribution in the joints. Results indicated that the Cu6Sn5 and Cu3Sn intermetallic layers thickness at the solder/Cu interface rises with annealing time at a rate of 0.042 µm/h for Sn-0.7Cu and 0.037 µm/h for Sn-0.7Cu-1.5Bi. The IMC growth’s activation energy during annealing is 48.96 kJ mol-1 for Sn-0.7Cu, while adding Bi into Sn-0.7Cu solder increased the activation energy to 55.76 kJ mol−1. The µ-XRF shows a lower Cu concentration level in Sn-0.7Cu-1.5Bi, where the Bi element was well dispersed in the β-Sn area as a result of the solid solution mechanism. The shape of the IMC layer also reconstructs from a scallop shape to a planar shape after the annealing process. The Sn-0.7Cu hardness and shear strength increased significantly with 1.5 wt.% Bi addition in reflowed and after isothermal annealing conditions.

STUDY OF WEAR RESISTANCE OF THE CU-AL SYSTEM LAYERED METAL-INTERMETALLIDE COMPOSITES

The results of wear testing of the SMIC of the copper-aluminum system at the angle of action of the abrasive relative to the metal-intermetallic layers - 0, 45 and 90º are given. It is shown that the wear resistance of SMIC is 3.2 ÷ 3.3 times higher than that of AD1 aluminum. At the same time, the samples showed the best indicators of wear resistance when the abrasive was applied to the layered structure of the tested SMIC at an angle of 45º. Analysis of the wear surfaces obtained by friction in all directions with respect to the layers of the SMIC made it possible to identify all the main morphological types of wear particles in the conglomerate. It is shown that additional saturation of the hard phases (intermetallic or abrasive) with pressed particles of soft metal layers contributes to the implementation of the Charpy principle.

INFLUENCE OF ULTRASOUND ON DIFFUSION ZONE GROWTH KINETICS DURING HEAT TREATMENT OF NICKEL-ALUMINUM BIMETAL

It has been shown experimentally that the effect of ultrasound during heat treatment of the explosion-welded bimetal nickel NP2 + aluminum AD1 helps to reduce the latent nucleation period of NiAl and NiAl intermetallic layers at its interlayer boundary, reduces the temperature of the onset of eutectic transformation (~10 °C), at a temperature of intense diffusion increases the thickness diffusion zone (by 30-40%), without affecting its phase and chemical composition.

Formation of Die Soldering and the Influence of Alloying Elements on the Intermetallic Interface

Die soldering of die castings is a serious problem in the aluminum casting industry. The precise mechanism, the influence of the alloy composition, and the options for prevention have not yet been fully elaborated. A well-established solution for alloys with low iron content is the addition of manganese. However, up to 0.8 wt.% is necessary, which increases the amount of brittle phases in the material and consequently reduces ductility. Immersion tests with 1.2343 tool steel and pure aluminum as well as a hypoeutectic AlSi-alloy with Mn, Mo, Co, and Cr additions were carried out to systematically investigate the formation of die soldering. Three different intermetallic layers and a scattered granular intermetallic phase formed at the interface between steel and Al-alloy after immersion into the melt for a duration of 6 min at 710 °C. The combined presence of the irregular, needle-shaped β-Al5FeSi phase and the surrounding alloy was responsible for the bond between the two components. Mn and Mo inhibited the formation of the β-phase, and instead promoted the αC-Al15(Fe,X)3Si2 phase. This led to an evenly running boundary to the AlSi-alloy and thus prevented bonding. Cr has proven to be the most efficient addition against die soldering, with 0.2 wt.% being sufficient. Contrary to the other elements investigated, Cr also reduced the thickness of the intermetallic interface.

Microstructure Development in the Bonding Zone of Explosively Welded Ti and Cu Sheets

The interplay of various hardening and softening processes during explosive welding and post-processing annealing have been analysed in titanium/copper bimetallic sheets using scanning electron microscopy and microhardness measurements. Severe plastic deformation and intermetallics’ formation are typical processes leading to hardening, whereas dynamic/static recrystallization and the transformation of amorphous phases into crystalline ones lead to softening. In the as-welded state the interfacial layers of both parent sheets are severely deformed. However, they can undergo intense recrystalization in areas near large melted zones. Inside the melted zones a wide variety of chemical compositions can be detected, however, most of the phases do not appear in the Ti-Cu equilibrium phase diagram. The post-processing annealing at 973 K for 1 h leads to full recrystallization of severely deformed layers of parent sheets and transforms the non-equilibrium phases forming melted zone into the equilibrium TiCu4 and Ti3Cu4 ones via spinodal decomposition. Simultaneously, the growth of four intermetallic layers: Ti2Cu, TiCu, Ti3Cu4, TiCu4 situated along the whole interface was detected.

An experimental-numeric approach to manufacture semiconductor wafer using thick copper front metallization

The presented work investigates about the deformation of semiconductor device induced by electrochemical deposited thick copper films. It enhances thermal and electric performances allowing to use copper interconnections without formations of intermetallic layers at the interfaces with consequent reliability improvement. Nevertheless, the induced deformation strongly affects manufacturability, criticizing the integration between different process steps. Experiment based on phase-shift Moiré principle has been performed to better understand the relation between warpage and temperature. Finite element model has been developed to reproduce the phenomenon in order to address the design and the process integration optimizing workability, electrical performances and reliability.