Tunnelling in rare-earth nitride structures

10.26686/wgtn.17072138 ◽

2021 ◽

Author(s):

◽

Jackson Miller

Keyword(s):

Vapour Deposition ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Barrier Properties ◽

Physical Vapour Deposition ◽

Electrical Characteristics ◽

X Ray Diffraction ◽

X Ray ◽

Device Structures ◽

Zero Moment

<p>GdN thin film device structures, including magnetic tunnel junctions (MTJs), were grown by physical vapour deposition and their electrical properties were investigated. Growth compatibility between GdN and various contact metals (Al, Au, Gd and Nb) was assured using X-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. I developed a photomask and lithographic process to isolate electrical behaviour perpendicular to the plane of the films. Al and Au were confirmed to make ohmic contact to GdN, while Gd and Nb both formed Schottky-like barriers at the interface with GdN. In MTJ structures, device electrical characteristics were dominated by tunnelling behaviour through the GaN barrier layer. The Simmons model was successfully applied to tunnelling measurements of Al/GdN/GaN/GdN/Gd structured MTJs to determine the barrier properties. MTJs grown with Al bottom contacts were grown with 1.5eV potential barrier height and 2.5 nm width. Finally, MTJs contacted with Nb exhibited a large magnetoresistance (> 500%), greater than GdN-based MTJs recorded in the literature [Warring et al. ”Magnetic Tunnel Junctions Incorporating a Near-Zero-Moment Ferromagnetic Semiconductor”, Phys. Rev. Appl., vol.6, p.044002, 2016].</p>

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X-ray diffraction analysis and Monte Carlo simulations of CoFeB-MgO based magnetic tunnel junctions

Journal of Applied Physics ◽

10.1063/1.4775706 ◽

2013 ◽

Vol 113 (2) ◽

pp. 023915 ◽

Cited By ~ 5

Author(s):

J. Kanak ◽

P. Wiśniowski ◽

T. Stobiecki ◽

A. Zaleski ◽

W. Powroźnik ◽

...

Keyword(s):

Monte Carlo ◽

Monte Carlo Simulations ◽

Diffraction Analysis ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

X Ray Diffraction ◽

X Ray

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Synthesis of Pt nanowires with the participation of physical vapour deposition

Open Physics ◽

10.1515/phys-2016-0017 ◽

2016 ◽

Vol 14 (1) ◽

pp. 159-165

Author(s):

Leszek A. Dobrzański ◽

Marek Szindler ◽

Mirosława Pawlyta ◽

Magdalena M. Szindler ◽

Paulina Boryło ◽

...

Keyword(s):

Electron Microscopy ◽

Vapour Deposition ◽

Physical Vapour Deposition ◽

X Ray Diffraction ◽

Step Method ◽

X Ray ◽

Transmission Electron ◽

Conformal Coverage ◽

Pt Nanowires

AbstractThe following paper presents the possibility of formation of Pt nanowires, achieved by a three-step method consisting of conformal deposition of a carbon nanotube and conformal coverage with platinum by physical vapour deposition, followed by removal of the carbonaceous template. The characterization of this new nanostructure was carried out through scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD).

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Analysis of stress gradients in physical vapour deposition multilayers by X-ray diffraction at fixed depth intervals

Journal of Applied Crystallography ◽

10.1107/s1600576713030951 ◽

2014 ◽

Vol 47 (1) ◽

pp. 335-345 ◽

Cited By ~ 4

Author(s):

G. Fischer ◽

U. Selvadurai ◽

J. Nellesen ◽

T. Sprute ◽

W. Tillmann

Keyword(s):

Vapour Deposition ◽

Steel Substrate ◽

Polar Angle ◽

Physical Vapour Deposition ◽

X Ray Diffraction ◽

Multilayer Systems ◽

X Ray ◽

Information Depth ◽

Stress Profiles ◽

Simultaneous Variation

The objective of this article is to develop and apply a model for the design and evaluation of X-ray diffraction experiments to measure phase-specific residual stress profiles in multilayer systems. Using synchrotron radiation and angle-dispersive diffraction, the stress measurements are performed on the basis of the sin2ψ method. Instead of the traditional Ω or χ mode, the experiments are carried out by a simultaneous variation of the goniometer angles χ, Ω and φGto ensure that the penetration and information depth and the measuring direction φ remain unchanged when the polar angle ψ is varied. The applicability of this measuring and evaluation strategy is demonstrated by the example of a multilayer system consisting of Ti and TiAlN layers, alternately deposited on a steel substrate by means of physical vapour deposition.

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Interfacial Reactions Between Ain Substrate And 4-A Family Elements

MRS Proceedings ◽

10.1557/proc-398-269 ◽

1995 ◽

Vol 398 ◽

Cited By ~ 1

Author(s):

Yong Du ◽

Xiangjun He ◽

Kun Tao

Keyword(s):

Direct Product ◽

Vapour Deposition ◽

Rutherford Backscattering Spectrometry ◽

Interfacial Reactions ◽

Physical Vapour Deposition ◽

X Ray Diffraction ◽

X Ray ◽

Different Temperatures ◽

Diffraction Peaks ◽

Xrd Patterns

ABSTRACTInterfacial reactions between A1N substrate and 4A-family elements including Ti, Zr and Hf were studied. The samples were prepared by Physical Vapour Deposition and annealed at different temperatures from 200°C to 800°C. X-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) were employed to detect the compounds formed at the interfaces between them. For Ti/AIN system, when the samples were annealed from 600°C to 800°C for 1 hour, it was found from XRD patterns that TiAl3, TiN, and Ti4N3.x including Ti2N were formed at Ti/AIN interface. With the temperature increasing, the intensities of Ti, TiN(200), Ti2N and Ti4N3.x diffraction peaks decreased while that of TiAl3 and TiN(111) increased. For Zr/AlN system, it was found that the reactions between Zr and AlN resulted in the formation of Al3Zr at about 300°C and Al2Zr at about 500°C. According to RBS spectra, it can be assumed that Al3Zr was the direct product by the reaction between AlN and Zr and Al2Zr was formed by the reaction between Al3Zr and Zr. For Hf/AlN system, however, even the sample was annealed at 800°C, no compound resulted from interfacial reactions was detected.

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