scholarly journals MONTE CARLO SIMULATION OF ION DYNAMICS IN MEMRISTIVE ELEMENTS

2021 ◽  
Author(s):  
Andrey Zhuravlev ◽  
Karine Abgaryan ◽  
Dmitry Bazhanov ◽  
Dmitry Reviznikov
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Oxygen Vacancies ◽  
Ion Dynamics ◽  
Monte Carlo Modeling ◽  
Oxide Layers ◽  
Oxygen Ions

The work is devoted to Monte Carlo modeling of the formation / destruction of oxygen vacancies and the migration of oxygen ions in oxide layers of memristive elements.

Monte Carlo Modeling of Interphase Boundaries in Cu-Ag and Cu-Ag-Au Alloys

1990 ◽  
Vol 205 ◽  
Author(s):  
P. Bacher ◽  
P. Wynblatt
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Binary System ◽  
Ternary Alloy ◽  
Embedded Atom Method ◽  
Misfit Dislocations ◽  
Monte Carlo Modeling ◽  
Embedded Atom ◽  
Composition And Structure ◽  
Interphase Boundaries

AbstractMonte Carlo simulation, in conjunction with the embedded atom method, has been used to model the composition and structure of a semicoherent (001) interphase boundary separating coexisting Cu-rich and Ag-rich phases in a binary Cu-Ag alloy. The results are compared with earlier simulations of the same boundary in a Cu-Ag-Au alloy, in which Au was found to segregate to the interface, and the boundary was found to be unstable with respect to break-up into {111} facets. The boundary in the binary system is also unstable to faceting, but displays both {100} as well as {111} facets. It is concluded that Au segregation in the ternary alloy plays an important role in stabilizing the {111} facets. The interplay between the misfit dislocations present at the interface, and the compositional features of the boundary are also discussed.

Monte Carlo Simulation of Edge Ion Dynamics in the Presence of Collisions and a Radial Electric Field

1994 ◽  
Vol 34 (2-3) ◽  
pp. 180-185 ◽  
Author(s):  
T. K. Kurki-Suonio ◽  
M. J. Alava ◽  
S. K. Sipilä ◽  
J. A. Heikkinen
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electric Field ◽  
Radial Electric Field ◽  
Ion Dynamics

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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