scholarly journals Modeling of sensitive element for pressure sensor based on bipolar piezotransistor

2021 ◽  
Author(s):  
Mikhail ◽  
Denis Prigodskiy
Keyword(s):  
Mathematical Model ◽  
Pressure Sensor ◽  
Sensitive Element ◽  
High Sensitivity ◽  
Wheatstone Bridge ◽  
Bipolar Transistor ◽  
Differential Amplifier ◽  
Electrical Parameters ◽  
P Type ◽  
Passive Stress

The paper describes modeling of high-sensitivity MEMS pressure sensor based on a circuit containing both active and passive stress-sensitive elements: a differential amplifier utilizing two n-p-n transistors and four p-type piezoresistors. The analysis on the basis of the developed mathematical model for a pressure sensor with traditional piezoresistive Wheatstone bridge and theoretical conclusions regarding the change in the electrical parameters of a bipolar transistor under the influence of deformation was carried out.

scholarly journals Pressure Sensor with New Electrical Circuit Utilizing Bipolar Junction Transistor

2021 ◽  
Author(s):  
Mikhail
Keyword(s):  
Theoretical Model ◽  
Pressure Sensor ◽  
High Sensitivity ◽  
Wheatstone Bridge ◽  
Electrical Circuit ◽  
Sensor Chip ◽  
Chip Size ◽  
Junction Transistor ◽  
Developed Pressure ◽  
P Type

High sensitivity MEMS pressure sensor chip for different ranges (1 to 60 kPa) utilizing the novel electrical circuit of piezosensitive differential amplifier with negative feedback loop (PDA-NFL) is developed. Pressure sensor chip PDA-NFL utilizes two bipolar-junction transistors (BJT) with vertical n-p-n type structure (V-NPN) and eight piezoresistors (p-type). Both theoretical model of sensor response to pressure and temperature and experimental data are presented. Data confirms the applicability of theoretical model. Introduction of the amplifier allows for decreasing chip size while keeping the same sensitivity as a chip with classic Wheatstone bridge circuit.

Pressure Sensor with Novel Electrical Circuit Utilizing Bipolar Junction Transistor

2021 ◽  
Author(s):  
Mikhail Basov
Keyword(s):  
Theoretical Model ◽  
Pressure Sensor ◽  
High Sensitivity ◽  
Wheatstone Bridge ◽  
Electrical Circuit ◽  
Sensor Chip ◽  
Chip Size ◽  
Junction Transistor ◽  
Developed Pressure ◽  
P Type

<p>High sensitivity MEMS pressure sensor chip for different ranges (1 to 60 kPa) utilizing the novel electrical circuit of piezosensitive differential amplifier with negative feedback loop (PDA-NFL) is developed. Pressure sensor chip PDA-NFL utilizes two bipolar-junction transistors (BJT) with vertical n-p-n type structure (V-NPN) and eight piezoresistors (p-type). Both theoretical model of sensor response to pressure and temperature and experimental data are presented. Data confirms the applicability of theoretical model. Introduction of the amplifier allows for decreasing chip size while keeping the same sensitivity as a chip with classic Wheatstone bridge circuit.</p>

scholarly journals Investigation of sensitive element for pressure sensor based on bipolar piezotransistor

2021 ◽  
Author(s):  
Mikhail ◽  
Denis Prigodskiy
Keyword(s):  
Pressure Sensor ◽  
Output Signal ◽  
Dynamic Range ◽  
Strong Dependence ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Wheatstone Bridge ◽  
Differential Amplifier ◽  
Sensor Output ◽  
Thin Part

The article translated from Russian to English on pp. 691-693 (please, look down). The paper summarizes results of investigation of high-sensitivity MEMS pressure sensor based on a circuit containing both active and passive stress-sensitive elements: a differential amplifier utilizing two n-p-n piezotransistors and for p-type piezoresistors. A comparative analysis of a sensor utilizing this circuit with a pressure sensor based on traditional piezoresistive Wheatstone bridge and built on the same mechanical part is provided. MEMS pressure sensor with the differential amplifier (PSDA) has sensitivity of S = 0.66 mV/kPa/V, which exceeded the sensitivity of the element with piezoresistive Wheatstone bridge (PSWB) by 2.2 times. The sensitivity increase allows for the following sensor improvements: die size reduction, increase of diaphragm mechanical strength while keeping high pressure sensitivity, and simplifying requirements to external processing of the pressure sensor output signal. There are two main challenges related to the use of PSDA-based pressure sensors: strong dependence of output signal on temperature and higher than in PSWB noise reducing the dynamic range of the device to 10 3. The article describes methods of addressing these problems. The temperature dependence of sensor output signal can be minimized with help of an offset thermal compensation circuit and by eliminating metallization at the thin part of the diaphragm. The noise can be minimized by reducing the thickness of the active base region of the transistor. Circuit analysis with software NI Multisim shows that sensitivity of PSDA-based pressure sensor can be increased 2.3 times by circuit optimization.

scholarly journals Pressure Sensor with New Electrical Circuit Utilizing Bipolar Junction Transistor

2021 ◽  
Author(s):  
Mikhail Basov
Keyword(s):  
Theoretical Model ◽  
Pressure Sensor ◽  
High Sensitivity ◽  
Wheatstone Bridge ◽  
Electrical Circuit ◽  
Sensor Chip ◽  
Chip Size ◽  
Junction Transistor ◽  
Developed Pressure ◽  
P Type

Abstract High sensitivity MEMS pressure sensor chip for different ranges (1 to 60 kPa) utilizing the novel electrical circuit of piezosensitive differential amplifier with negative feedback loop (PDA-NFL) is developed. Pressure sensor chip PDA-NFL utilizes two bipolar-junction transistors (BJT) with vertical n-p-n type structure (V-NPN) and eight piezoresistors (p–type). Both theoretical model of sensor response to pressure and temperature and experimental data are presented. Data confirms the applicability of theoretical model. Introduction of the amplifier allows for decreasing chip size while keeping the same sensitivity as a chip with classic Wheatstone bridge circuit.

scholarly journals Pressure Sensor with Novel Electrical Circuit Utilizing Bipolar Junction Transistor

2021 ◽  
Author(s):  
Mikhail Basov
Keyword(s):  
Theoretical Model ◽  
Pressure Sensor ◽  
High Sensitivity ◽  
Wheatstone Bridge ◽  
Electrical Circuit ◽  
Sensor Chip ◽  
Chip Size ◽  
Junction Transistor ◽  
Developed Pressure ◽  
P Type

<p>High sensitivity MEMS pressure sensor chip for different ranges (1 to 60 kPa) utilizing the novel electrical circuit of piezosensitive differential amplifier with negative feedback loop (PDA-NFL) is developed. Pressure sensor chip PDA-NFL utilizes two bipolar-junction transistors (BJT) with vertical n-p-n type structure (V-NPN) and eight piezoresistors (p-type). Both theoretical model of sensor response to pressure and temperature and experimental data are presented. Data confirms the applicability of theoretical model. Introduction of the amplifier allows for decreasing chip size while keeping the same sensitivity as a chip with classic Wheatstone bridge circuit.</p>

High-Performance Readout Circuit for Monolithic Integrated Pressure Sensor

2011 ◽  
Vol 130-134 ◽  
pp. 4216-4219
Author(s):  
Xu Hua Zhou ◽  
Shi Liu Xu ◽  
Zheng Yuan Zhang
Keyword(s):  
Pressure Sensor ◽  
Applied Pressure ◽  
Current Source ◽  
High Sensitivity ◽  
Wheatstone Bridge ◽  
Open Loop ◽  
Effect Of Temperature ◽  
Readout Circuit ◽  
High Linearity ◽  
Temperature Loss

A readout circuit with high sensitivity and high linearity is proposed in this paper. The applied pressure is sensed by Wheatstone bridge which can reduce the adverse effect of temperature. As the applied pressure changes from 15kPa to 115kPa, the sensitivity of the bridge is 0.36mV/kPa. The current source of the circuit can provide a current with a positive coefficient which can compensate for the inherent high-temperature loss of sensitivity of the Piezoresistive Bridge. Three high-precision operational amplifiers with symmetrical input and rail-to-rail output are used to process the output signal of the bridge. It can provide high CMRR with 123.8dB, open loop gain is 110dB and the output swings from 36.41mV to 4.953mV as the power supply is 5V. A thin film resistors network can compensate for the zero pressure offset and sensitivity by trimming. The high sensitivity of the bridge and the high linearity of the proposed circuit make the readout circuit suitable for monolithically integrated pressure sensor.

scholarly journals Design and Displacement Analysis of Three different Cantilever based MEMS Piezoresistive Pressure Sensor with Polymer (PDMS/PMMA) Thin Flim

2021 ◽  
Vol 11 (2) ◽  
pp. 1629-1640
Author(s):  
Kavitha K
Keyword(s):  
Pressure Sensor ◽  
High Sensitivity ◽  
Comsol Multiphysics ◽  
Sensor Applications ◽  
Dimethyl Siloxane ◽  
Piezoresistive Pressure Sensor ◽  
Cantilever Structure ◽  
As Stress ◽  
P Type ◽  
High Range

This paper mainly focuses on to get high displacement from polymer based piezoresistive cantilever for MEMS/NEMS pressure sensor applications. The displacement has been analyzed and compared with three different cantilever using PDMS (Poly dimethyl siloxane) and PMMA (Poly methyl methacrylate) materials. The p-type silicon piezoresistors connected the form based on wheat stone bridge to get high sensible pressure sensor with respect to low response. An according to get high displacement, obviously the other performance of parameters such as stress, strain gets high range. So, this analyzed cantilever structure used to design a pressure sensor with high sensitivity. The design and simulation are done by using COMSOL Multiphysics.

scholarly journals Development of High-Sensitivity Pressure Sensor with On-chip Differential Transistor Amplifier

2021 ◽  
Author(s):  
Mikhail
Keyword(s):  
Experimental Data ◽  
Mathematical Model ◽  
Pressure Sensor ◽  
Feedback Loop ◽  
Operating Temperature ◽  
High Sensitivity ◽  
Electrical Circuit ◽  
Negative Feedback Loop ◽  
On Chip ◽  
Operating Temperature Range

A mathematical model of a high-sensitivity pressure sensor with a novel electrical circuit utilizing a piezosensitive transistor differential amplifier with negative feedback loop is presented. Circuits utilizing differential transistor amplifiers based on vertical n-p-n and lateral p-n-p transistors are analyzed and optimized for sensitivity to pressure and stability of output signal in operating temperature range. Parameters of fabrication process necessary for modeling of I–V characteristics of transistors are discussed. The results of the model are sufficiently close to the experimental data.

scholarly journals Development of High-Sensitivity Pressure Sensor with On-chip Differential Transistor Amplifier

2021 ◽  
Author(s):  
Mikhail Basov
Keyword(s):  
Experimental Data ◽  
Mathematical Model ◽  
Pressure Sensor ◽  
Feedback Loop ◽  
Operating Temperature ◽  
High Sensitivity ◽  
Electrical Circuit ◽  
Negative Feedback Loop ◽  
On Chip ◽  
Operating Temperature Range

<p>A mathematical model of a high-sensitivity pressure sensor with a novel electrical circuit utilizing piezosensitive transistor differential amplifier with negative feedback loop (PDA-NFL) is presented. Circuits utilizing differential transistor amplifiers based on vertical n-p-n and lateral p-n-p transistors are analyzed and optimized for sensitivity to pressure and stability of output signal in operating temperature range. Parameters of fabrication process necessary for modeling of I-V characteristics of transistors are discussed. The results of the model are sufficiently close to the experimental data.</p><br>

scholarly journals Development of High-Sensitivity Pressure Sensor with On-chip Differential Transistor Amplifier

2021 ◽  
Author(s):  
Mikhail Basov
Keyword(s):  
Experimental Data ◽  
Mathematical Model ◽  
Pressure Sensor ◽  
Feedback Loop ◽  
Operating Temperature ◽  
High Sensitivity ◽  
Electrical Circuit ◽  
Negative Feedback Loop ◽  
On Chip ◽  
Operating Temperature Range

<p>A mathematical model of a high-sensitivity pressure sensor with a novel electrical circuit utilizing piezosensitive transistor differential amplifier with negative feedback loop (PDA-NFL) is presented. Circuits utilizing differential transistor amplifiers based on vertical n-p-n and lateral p-n-p transistors are analyzed and optimized for sensitivity to pressure and stability of output signal in operating temperature range. Parameters of fabrication process necessary for modeling of I-V characteristics of transistors are discussed. The results of the model are sufficiently close to the experimental data.</p><br>

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