scholarly journals Design and Displacement Analysis of Three different Cantilever based MEMS Piezoresistive Pressure Sensor with Polymer (PDMS/PMMA) Thin Flim

2021 ◽  
Vol 11 (2) ◽  
pp. 1629-1640
Author(s):  
Kavitha K

This paper mainly focuses on to get high displacement from polymer based piezoresistive cantilever for MEMS/NEMS pressure sensor applications. The displacement has been analyzed and compared with three different cantilever using PDMS (Poly dimethyl siloxane) and PMMA (Poly methyl methacrylate) materials. The p-type silicon piezoresistors connected the form based on wheat stone bridge to get high sensible pressure sensor with respect to low response. An according to get high displacement, obviously the other performance of parameters such as stress, strain gets high range. So, this analyzed cantilever structure used to design a pressure sensor with high sensitivity. The design and simulation are done by using COMSOL Multiphysics.

2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Jung Joon Lee ◽  
Srinivas Gandla ◽  
Byeongjae Lim ◽  
Sunju Kang ◽  
Sunyoung Kim ◽  
...  

Abstract Conformal and ultrathin coating of highly conductive PEDOT:PSS on hydrophobic uneven surfaces is essential for resistive-based pressure sensor applications. For this purpose, a water-based poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) solution was successfully exchanged to an organic solvent-based PEDOT:PSS solution without any aggregation or reduction in conductivity using the ultrafiltration method. Among various solvents, the ethanol (EtOH) solvent-exchanged PEDOT:PSS solution exhibited a contact angle of 34.67°, which is much lower than the value of 96.94° for the water-based PEDOT:PSS solution. The optimized EtOH-based PEDOT:PSS solution exhibited conformal and uniform coating, with ultrathin nanocoated films obtained on a hydrophobic pyramid polydimethylsiloxane (PDMS) surface. The fabricated pressure sensor showed high performances, such as high sensitivity (−21 kPa−1 in the low pressure regime up to 100 Pa), mechanical stability (over 10,000 cycles without any failure or cracks) and a fast response time (90 ms). Finally, the proposed pressure sensor was successfully demonstrated as a human blood pulse rate sensor and a spatial pressure sensor array for practical applications. The solvent exchange process using ultrafiltration for these applications can be utilized as a universal technique for improving the coating property (wettability) of conducting polymers as well as various other materials.


2013 ◽  
Vol 771 ◽  
pp. 159-162
Author(s):  
Li Feng Qi ◽  
Zhi Min Liu ◽  
Xing Ye Xu ◽  
Guan Zhong Chen ◽  
Xue Qing

The relative research of low range and high anti-overload piezoresistive pressure sensor is carried out in this paper and a new kind of sensor chip structure, the double ends-four beam structure, is proposed. Trough the analysis, the sensor chip structure designed in this paper has high sensitivity and linearity. The chip structure is specially suit for the micro-pressure sensor. The theoretical analysis and finite element analysis is taken in this paper, which provide important scientific basis for the pressure sensor development.


2021 ◽  
Author(s):  
Mikhail

High sensitivity MEMS pressure sensor chip for different ranges (1 to 60 kPa) utilizing the novel electrical circuit of piezosensitive differential amplifier with negative feedback loop (PDA-NFL) is developed. Pressure sensor chip PDA-NFL utilizes two bipolar-junction transistors (BJT) with vertical n-p-n type structure (V-NPN) and eight piezoresistors (p-type). Both theoretical model of sensor response to pressure and temperature and experimental data are presented. Data confirms the applicability of theoretical model. Introduction of the amplifier allows for decreasing chip size while keeping the same sensitivity as a chip with classic Wheatstone bridge circuit.


2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000373-000378
Author(s):  
R. Otmani ◽  
N. Benmoussa ◽  
K. Ghaffour

Piezoresistive pressure sensors based on Silicon have a large thermal drift because of their high sensitivity to temperature (ten times more sensitive to temperature than metals). So the study of the thermal behavior of these sensors is essential to define the parameters that cause the drift of the output characteristics. In this study, we adopted the behavior of 2nd degree gauges depending on the temperature. Then we model the thermal behavior of the sensor and its characteristics.


Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 664 ◽  
Author(s):  
Junsong Hu ◽  
Junsheng Yu ◽  
Ying Li ◽  
Xiaoqing Liao ◽  
Xingwu Yan ◽  
...  

The reasonable design pattern of flexible pressure sensors with excellent performance and prominent features including high sensitivity and a relatively wide workable linear range has attracted significant attention owing to their potential application in the advanced wearable electronics and artificial intelligence fields. Herein, nano carbon black from kerosene soot, an atmospheric pollutant generated during the insufficient burning of hydrocarbon fuels, was utilized as the conductive material with a bottom interdigitated textile electrode screen printed using silver paste to construct a piezoresistive pressure sensor with prominent performance. Owing to the distinct loose porous structure, the lumpy surface roughness of the fabric electrodes, and the softness of polydimethylsiloxane, the piezoresistive pressure sensor exhibited superior detection performance, including high sensitivity (31.63 kPa−1 within the range of 0–2 kPa), a relatively large feasible range (0–15 kPa), a low detection limit (2.26 pa), and a rapid response time (15 ms). Thus, these sensors act as outstanding candidates for detecting the human physiological signal and large-scale limb movement, showing their broad range of application prospects in the advanced wearable electronics field.


Author(s):  
Tran Anh Vang ◽  
Xianmin Zhang ◽  
Benliang Zhu

The sensitivity and linearity trade-off problem has become the hotly important issues in designing the piezoresistive pressure sensors. To solve these trade-off problems, this paper presents the design, optimization, fabrication, and experiment of a novel piezoresistive pressure sensor for micro pressure measurement based on a combined cross beam - membrane and peninsula (CBMP) structure diaphragm. Through using finite element method (FEM), the proposed sensor performances as well as comparisons with other sensor structures are simulated and analyzed. Compared with the cross beam-membrane (CBM) structure, the sensitivity of CBMP structure sensor is increased about 38.7 % and nonlinearity error is reduced nearly 8%. In comparison with the peninsula structure, the maximum non-linearity error of CBMP sensor is decreased about 40% and the maximum deflection is extremely reduced 73%. Besides, the proposed sensor fabrication is performed on the n-type single crystal silicon wafer. The experimental results of the fabricated sensor with CBMP membrane has a high sensitivity of 23.4 mV/kPa and a low non-linearity of −0.53% FSS in the pressure range 0–10 kPa at the room temperature. According to the excellent performance, the sensor can be applied to measure micro-pressure lower than 10 kPa.


2017 ◽  
Vol 12 (4) ◽  
pp. 546-553 ◽  
Author(s):  
Tingzhong Xu ◽  
Hongyan Wang ◽  
Yong Xia ◽  
Zhiming Zhao ◽  
Mimi Huang ◽  
...  

2019 ◽  
Vol 25 (25) ◽  
pp. 6378-6384 ◽  
Author(s):  
Tao Wang ◽  
Jinhui Li ◽  
Yu Zhang ◽  
Feng Liu ◽  
Bo Zhang ◽  
...  

2021 ◽  
Author(s):  
Mikhail Basov

<p>High sensitivity MEMS pressure sensor chip for different ranges (1 to 60 kPa) utilizing the novel electrical circuit of piezosensitive differential amplifier with negative feedback loop (PDA-NFL) is developed. Pressure sensor chip PDA-NFL utilizes two bipolar-junction transistors (BJT) with vertical n-p-n type structure (V-NPN) and eight piezoresistors (p-type). Both theoretical model of sensor response to pressure and temperature and experimental data are presented. Data confirms the applicability of theoretical model. Introduction of the amplifier allows for decreasing chip size while keeping the same sensitivity as a chip with classic Wheatstone bridge circuit.</p>


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