Backscatter Ex-Nihilo: Single-component, Fully-passive Backscattering for Microcontrollers

This paper investigates the harvesting of RF power using the existing electrostatic discharge (ESD) protection circuits of most ICs. Because of the internal diode configuration, a single off-chip capacitor is enough to create a charge pump circuit for rectifying and storing sufficient DC power to passively operate a microcontroller. This paper explores ESD circuitry and shows the feasibility of ESD-based power harvesting. A proof- of-concept device demonstrates a fully-passive backscatter link created using a MSP430. Backscatter communication is achieved through modulation of the internal configuration of a General Purpose Input Output (GPIO) pin on a microcontroller. This type of circuit enables two types of communication: zombie-links in which data is able to be transferred after a device has had its battery removed, as well as a mechanism for hidden identification or verification data, such as chip dielets.

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A Charge Pump Circuit --- Cascading High-Voltage Clock Generator

4th IEEE International Symposium on Electronic Design, Test and Applications (delta 2008) ◽

10.1109/delta.2008.94 ◽

2008 ◽

Cited By ~ 6

Author(s):

Wen Chang Huang ◽

Jin Chang Cheng ◽

Po Chih Liou

Keyword(s):

High Voltage ◽

Charge Pump ◽

Clock Generator ◽

A Charge ◽

Charge Pump Circuit

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Properties and Analysis of Transparency Conducting AZO Films by Using DC Power and RF Power Simultaneous Magnetron Sputtering

Advances in Materials Science and Engineering ◽

10.1155/2013/401392 ◽

2013 ◽

Vol 2013 ◽

pp. 1-6 ◽

Cited By ~ 1

Author(s):

Neng-Fu Shih ◽

Jin-Zhou Chen ◽

Yeu-Long Jiang

Keyword(s):

Incident Light ◽

Blue Shift ◽

Light Wavelength ◽

Rf Power ◽

X Ray Diffraction ◽

X Ray ◽

Dc Power ◽

Incident Light Wavelength ◽

Significant Blue Shift ◽

Sputtering System

DC power and RF power were introduced into the magnetic controlled sputtering system simultaneously to deposit AZO films in order to get an acceptable deposition rate with high quality transparency conducting thin film. The resistivity decreases with the RF power for the as-deposited samples. The resistivity of 6 × 10−4 Ω-cm and 3.5–4.5 × 10−4 Ω-cm is obtained for the as-deposited sample, and for all annealed samples, respectively. The transmittance of the AZO films with higher substrate temperature is generally above 80% for the incident light wavelength within 400–800 nm. The transmittance of the as-deposited samples reveals a clear blue shift phenomenon. The AZO films present (002) oriented preference as can be seen from the X-ray diffraction curves. All AZO films reveal compressive stress. The annealing process improves the electrical property of AZO films. A significant blue shift phenomenon has been found, which may have a great application for electrode in solar cell.

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