Thermal Induced Structural Conductivity in LPCVD Polysilicon Film on Silicon Nitride/SiO2 Capped (100) Silicon

Polysilicon (PS) grains are clustered in an order in the presence of thermal doping of boron in low pressure chemical vapour deposition (LPCVD). PS layer is lying on silicon nitride/silicon dioxide bed over (100) silicon substrate. The doped PS at different temperatures has been analyzed for the grain size and the shape of the clusters, employing non-contact mode atomic force microscopy (AFM). The grain size of the PS remains intact without a significant change with increasing doping temperature. A substantial increase in the cluster size and its density of the grains has been observed. The cluster formation mechanism induced by thermal variation is discussed in the context of recorded AFM images. The clusters lead to PS rings comprising of grains of the size of 100 nm.Keywords: Doping; Polisilico; Nanophysics; Grainsize; AFM; MEMS; LPCVD; SOI; ContactmodeDOI: 10.3126/njst.v10i0.2901Nepal Journal of Science and Technology Volume 10, 2009 December Page: 115-119

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Thermal Induced Clustering of Polysilicon Film on Silicon Nitride/Silicon Dioxide Bed on Silicon Substrate

Scientific World ◽

10.3126/sw.v8i8.3839 ◽

1970 ◽

Vol 8 (8) ◽

pp. 10-14

Author(s):

Shobha Kanta Lamichhane

Keyword(s):

Grain Size ◽

Silicon Nitride ◽

Silicon Dioxide ◽

Silicon Substrate ◽

Cluster Formation ◽

Chemical Vapour ◽

Contact Mode ◽

Polysilicon Film ◽

Pressure Chemical ◽

Different Temperatures

Polysilicon (PS) grains are clustered in an order in the presence of thermal doping of boron in low pressure chemical vapour deposition (LPCVD). PS layer is lying on Silicon Nitride/Silicon dioxide bed over (100) silicon substrate. The doped PS at different temperatures has been analyzed for the grain size and the shape of the clusters, employing non-contact mode Atomic Force Microscopy (AFM). The grain size of the PS remains intact without a significant change with increasing doping temperature. A substantial increase in the cluster size and its density of the grains has been observed. The cluster formation mechanism induced by thermal variation is discussed in the context of recorded AFM images. The clusters lead to PS rings comprising of grains of the size of 100 nm. Keywords: Doping; Polisilicon; Nanoscale; AFM; MEMS; LPCVD; Contactmode. DOI: 10.3126/sw.v8i8.3839 Scientific World Vol.8(8) 2010 pp.10-14

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Surface Morphology of Single and Multi-Layer Silicon Nitride Dielectric Nano-Coatings on Silicon Dioxide and Polycrystalline Silicon

Materials Science ◽

10.5755/j01.ms.26.1.21479 ◽

2019 ◽

Vol 26 (1) ◽

pp. 25-29

Author(s):

Liga AVOTINA ◽

Elina PAJUSTE ◽

Marina ROMANOVA ◽

Gennady ENICHEK ◽

Aleksandrs ZASLAVSKIS ◽

...

Keyword(s):

Silicon Nitride ◽

Surface Morphology ◽

Polycrystalline Silicon ◽

Chemical Vapour ◽

Attenuated Total Reflection ◽

Infrared Spectrometry ◽

Chemical Bonds ◽

Force Microscopy ◽

Atomic Force ◽

Pressure Chemical

Silicon nitride (Si3N4) in a form of single and multi-layer nanofilms is proposed to be used as a dielectric layer in nanocapacitors for operation in harsh environmental conditions. Characterization of surface morphology, roughness and chemical bonds of the Si3N4 coatings has an important role in production process as the surface morphology affects the contact surface with other components of the produced device. Si3N4 was synthesized by using low pressure chemical vapour deposition method and depositing single and multi-layer (3 – 5 layers) nanofilms on SiO2 and polycrystalline silicon (PolySi). The total thickness of the synthesized nanofilms was 20 – 60 nm. Surface morphology was investigated by means of scanning electron microscopy (SEM) and atomic force microscopy (AFM). Chemical bonds in the layers were identified by means of Fourier transform infrared spectrometry, attenuated total reflection (FTIR-ATR) method. (From the SEM and AFM images it was estimated that both single and multi-layer coatings are deposited homogenously. Si-N breathing and stretching modes are observed in FTIR spectra and the surface morphology is highly dependent on PolySi, therefore suggesting the decrease of the roughness of the bottom electrode for use in the nanocapacitors.

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Spectroscopic Ellipsometry Characterisation of Thin Film Polysilicon

MRS Proceedings ◽

10.1557/proc-324-39 ◽

1993 ◽

Vol 324 ◽

Cited By ~ 1

Author(s):

S. Lynch ◽

L. Spinelli ◽

M. Sherlock ◽

J. Barrett ◽

G.M. Crean

Keyword(s):

Thin Film ◽

Spectroscopic Ellipsometry ◽

Vapour Deposition ◽

Chemical Vapour ◽

Force Microscopy ◽

Atomic Force ◽

Process Pressure ◽

Pressure Chemical ◽

Sample Set ◽

Deposition Conditions

AbstractPhase modulated Spectroscopic Ellipsometry (SE), in the spectral range from 1.5eV to 4.6eV, was employed to characterise thin film polysilicon (poly-Si) deposited by Low Pressure Chemical Vapour Deposition (LPCVD) on SiO2/Si(100) substrates as a function of process parameters. The LPCVD deposition temperature was varied from 550°C to 620°C for silane pressures ranging from 100mTorr to 230mTorr. A variation in poly-Si microstructure was observed as a function of film depth. The influence of deposition conditions on poly-Si surface morphology was quantified using both atomic force microscopy (AFM) and SE. An increase in the measured Raman TO phonon amplitude was observed for the 620°C sample set as a function of increasing LPCVD process pressure.

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Characterization of Green Laser Crystallized GeSi Thin Films

MRS Proceedings ◽

10.1557/opl.2011.807 ◽

2011 ◽

Vol 1321 ◽

Author(s):

Balaji Rangarajan ◽

Ihor Brunets ◽

Peter Oesterlin ◽

Alexey Y. Kovalgin ◽

Jurriaan Schmitz

Keyword(s):

Photoelectron Spectroscopy ◽

Chemical Vapour ◽

Green Laser ◽

Laser Crystallization ◽

X Ray Diffraction ◽

X Ray ◽

Force Microscopy ◽

Atomic Force ◽

Pressure Chemical

ABSTRACTGreen laser crystallization of a-Ge0.85Si0.15 films deposited using Low Pressure Chemical Vapour Deposition is studied. Large grains of 8x2 μm2 size were formed using a location-controlled approach. Characterization is done using Scanning Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron Spectroscopy and X-Ray Diffraction.

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Surface roughness measurements of vanadium-contaminated fluidized cracking catalysts by atomic force microscopy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100166798 ◽

1996 ◽

Vol 54 ◽

pp. 866-867

Author(s):

H. Kinney ◽

M.L. Occelli ◽

S.A.C. Gould

Keyword(s):

Surface Roughness ◽

Zeolite Y ◽

Atomic Level ◽

Microporous Structure ◽

Contact Mode ◽

Force Microscopy ◽

Atomic Force ◽

Before And After ◽

Roughness Measurements ◽

Cracking Catalysts

For this study we have used a contact mode atomic force microscope (AFM) to study to topography of fluidized cracking catalysts (FCC), before and after contamination with 5% vanadium. We selected the AFM because of its ability to well characterize the surface roughness of materials down to the atomic level. It is believed that the cracking in the FCCs occurs mainly on the catalysts top 10-15 μm suggesting that the surface corrugation could play a key role in the FCCs microactivity properties. To test this hypothesis, we chose vanadium as a contaminate because this metal is capable of irreversibly destroying the FCC crystallinity as well as it microporous structure. In addition, we wanted to examine the extent to which steaming affects the vanadium contaminated FCC. Using the AFM, we measured the surface roughness of FCCs, before and after contamination and after steaming.We obtained our FCC (GRZ-1) from Davison. The FCC is generated so that it contains and estimated 35% rare earth exchaged zeolite Y, 50% kaolin and 15% binder.

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Dynamic friction energy dissipation and enhanced contrast in high frequency bimodal atomic force microscopy

Friction ◽

10.1007/s40544-021-0489-1 ◽

2021 ◽

Author(s):

Xinfeng Tan ◽

Dan Guo ◽

Jianbin Luo

Keyword(s):

Atomic Force Microscopy ◽

Energy Dissipation ◽

Contact Friction ◽

Measuring Instruments ◽

Dynamic Friction ◽

Contact Mode ◽

Force Microscopy ◽

Atomic Force ◽

Friction Energy ◽

New Applications

AbstractDynamic friction occurs not only between two contact objects sliding against each other, but also between two relative sliding surfaces several nanometres apart. Many emerging micro- and nano-mechanical systems that promise new applications in sensors or information technology may suffer or benefit from noncontact friction. Herein we demonstrate the distance-dependent friction energy dissipation between the tip and the heterogeneous polymers by the bimodal atomic force microscopy (AFM) method driving the second order flexural and the first order torsional vibration simultaneously. The pull-in problem caused by the attractive force is avoided, and the friction dissipation can be imaged near the surface. The friction dissipation coefficient concept is proposed and three different contact states are determined from phase and energy dissipation curves. Image contrast is enhanced in the intermediate setpoint region. The work offers an effective method for directly detecting the friction dissipation and high resolution images, which overcomes the disadvantages of existing methods such as contact mode AFM or other contact friction and wear measuring instruments.

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Atomic force microscopy comparative analysis of the surface roughness of two posterior chamber phakic intraocular lens models: ICL versus IPCL

BMC Ophthalmology ◽

10.1186/s12886-021-02039-6 ◽

2021 ◽

Vol 21 (1) ◽

Author(s):

Juan Gros-Otero ◽

Samira Ketabi ◽

Rafael Cañones-Zafra ◽

Montserrat Garcia-Gonzalez ◽

Cesar Villa-Collar ◽

...

Keyword(s):

Surface Roughness ◽

Atomic Force Microscopy ◽

Intraocular Lenses ◽

Posterior Chamber ◽

Anterior Surface ◽

Contact Mode ◽

Force Microscopy ◽

Atomic Force ◽

Phakic Intraocular Lenses ◽

Roughness Measurements

Abstract Background To compare the anterior surface roughness of two commercially available posterior chamber phakic intraocular lenses (IOLs) using atomic force microscopy (AFM). Methods Four phakic IOLs were used for this prospective, experimental study: two Visian ICL EVO+ V5 lenses and two iPCL 2.0 lenses. All of them were brand new, were not previously implanted in humans, were monofocal and had a dioptric power of − 12 diopters (D). The anterior surface roughness was assessed using a JPK NanoWizard II® atomic force microscope in contact mode immersed in liquid. Olympus OMCL-RC800PSA commercial silicon nitride cantilever tips were used. Anterior surface roughness measurements were made in 7 areas of 10 × 10 μm at 512 × 512 point resolution. The roughness was measured using the root-mean-square (RMS) value within the given regions. Results The mean of all anterior surface roughness measurements was 6.09 ± 1.33 nm (nm) in the Visian ICL EVO+ V5 and 3.49 ± 0.41 nm in the iPCL 2.0 (p = 0.001). Conclusion In the current study, we found a statistically significant smoother anterior surface in the iPCL 2.0 phakic intraocular lenses compared with the VISIAN ICL EVO+ V5 lenses when studied with atomic force microscopy.

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Nanocrystalline Solutions as Precursors to The Spray Deposition of Cdte Thin Films

MRS Proceedings ◽

10.1557/proc-382-461 ◽

1995 ◽

Vol 382 ◽

Cited By ~ 4

Author(s):

Martin Pehnt ◽

Douglas L. Schulz ◽

Calvin J. Curtis ◽

Helio R. Moutinho ◽

Amy Swartzlander ◽

...

Keyword(s):

Thin Films ◽

Atomic Force Microscopy ◽

Grain Size ◽

X Ray Diffraction ◽

X Ray ◽

Force Microscopy ◽

Cdte Nanoparticles ◽

Atomic Force ◽

Vis Spectroscopy ◽

Cdte Thin Films

ABSTRACTIn this article we report the first nanoparticle-derived route to smooth, dense, phase-pure CdTe thin films. Capped CdTe nanoparticles were prepared by injection of a mixture of Cd(CH3)2, (n-C8H17)3 PTe and (n-C8H17)3P into (n-C8H17)3PO at elevated temperatures. The resultant nanoparticles 32-45 Å in diameter were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, thermogravimetric analysis and energy dispersive x-ray spectroscopy. CdTe thin film deposition was accomplished by dissolving CdTe nanoparticles in butanol and then spraying the solution onto SnO2-coated glass substrates at variable susceptor temperatures. Smooth and dense CdTe thin films were obtained using growth temperatures approximately 200 °C less than conventional spray pyrolysis approaches. CdTe films were characterized by x-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and Auger electron spectroscopy. An increase in crystallinity and average grain size as determined by x-ray diffraction was noted as growth temperature was increased from 240 to 300 °C. This temperature dependence of film grain size was further confirmed by atomic force microscopy with no remnant nanocrystalline morphological features detected. UV-Vis characterization of the CdTe thin films revealed a gradual decrease of the band gap (i.e., elimination of nanocrystalline CdTe phase) as the growth temperature was increased with bulk CdTe optical properties observed for films grown at 300 °C.

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