scholarly journals Physical Properties of Tantalum Pentoxide Thin Film Fbricated by RF-Magnetron Sputtering Method.

Shinku ◽  
1997 ◽  
Vol 40 (3) ◽  
pp. 126-129
Author(s):  
Tomosumi KAMIMURA ◽  
Hazime KANOU ◽  
Kanyoshi OCHI ◽  
Kunio YOSHIDA ◽  
Hidetugu YOSHIDA ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Physical Properties ◽  
Rf Magnetron Sputtering ◽  
Tantalum Pentoxide

Electrical and Physical Properties of Sodium Potassium Niobates Thin Films Prepared by rf Magnetron Sputtering Technology

2011 ◽  
Vol 239-242 ◽  
pp. 532-535
Author(s):  
Chien Min Cheng ◽  
Shih Fang Chen ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Hsiu Hsien Su
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Physical Properties ◽  
Leakage Current ◽  
Oxygen Concentration ◽  
Leakage Current Density ◽  
Current Density ◽  
Rf Magnetron Sputtering ◽  
Average Grain Size

Lead-free potassium sodium niobate ceramic thin films were synthesized using rf magnetron sputtering technology for MFIS structures. The optimal sputtering parameters of the as-deposited KNN thin films for depositing times of 1h were obtained. Regarding the measured physical properties, the micro-structure and thickness of as-deposited KNN thin films for different oxygen concentration were obtained and compared by XRD patterns and SEM images. The surface roughness of KNN thin film was also observed by AFM morphology. The average grain size and root mean square roughness were 250 and 7.04 nm, respectively. For KNN thin films in the MFIS structure, the capacitance and leakage current density were 280 pF and 10-8A/cm2, respectively. We investigated that the leakage current density and the memory window increased, the capacitance critically increased as the oxygen concentration increased from 0 to 40%. However, the excess oxygen concentration process was decreased the electrical and physical of as-deposited KNN thin film. The effect of oxygen concentration on the physical and electrical characteristics of KNN thin films was investigated and determined.

Effect of Al2O3-doping on the structure and optoelectronic characteristics of MgZnO thin film prepared by RF magnetron sputtering

2021 ◽  
Vol 127 (7) ◽  
Author(s):  
Du-Cheng Tsai ◽  
Feng-Kuan Chen ◽  
Zue-Chin Chang ◽  
Bing-Hau Kuo ◽  
Erh-Chiang Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Al2o3 Doping

Electron Conduction of Nd0.6Sr0.4FeO3−δ Thin Film with Oxygen Vacancies Prepared by RF Magnetron Sputtering

2017 ◽  
Vol 86 (7) ◽  
pp. 074704 ◽  
Author(s):  
Wataru Namiki ◽  
Takashi Tsuchiya ◽  
Makoto Takayanagi ◽  
Shoto Furuichi ◽  
Makoto Minohara ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Oxygen Vacancies ◽  
Rf Magnetron Sputtering ◽  
Electron Conduction

125MeV Si9+ ion irradiation of calcium phosphate thin film coated by rf-magnetron sputtering technique

2011 ◽  
Vol 257 (6) ◽  
pp. 2134-2141 ◽  
Author(s):  
K. Elayaraja ◽  
M.I. Ahymah Joshy ◽  
R.V. Suganthi ◽  
S. Narayana Kalkura ◽  
M. Palanichamy ◽  
...  
Keyword(s):  
Thin Film ◽  
Calcium Phosphate ◽  
Magnetron Sputtering ◽  
Ion Irradiation ◽  
Rf Magnetron Sputtering

Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

2003 ◽  
Vol 82 (7) ◽  
pp. 1117-1119 ◽  
Author(s):  
P. F. Carcia ◽  
R. S. McLean ◽  
M. H. Reilly ◽  
G. Nunes
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Thin Film Transistor ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Film

PROPERTIES OF ALL-SOLID-STATE LITHIUM-ION RECHARGEABLE BATTERIES DEPOSITED BY RF MAGNETRON SPUTTERING

2013 ◽  
Vol 27 (22) ◽  
pp. 1350156 ◽  
Author(s):  
R. J. ZHU ◽  
Y. REN ◽  
L. Q. GENG ◽  
T. CHEN ◽  
L. X. LI ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solid State ◽  
Magnetron Sputtering ◽  
Coulombic Efficiency ◽  
Electronic Conductivity ◽  
Lithium Ion ◽  
Rf Magnetron Sputtering ◽  
Rechargeable Batteries ◽  
Voltage Range

Amorphous V 2 O 5, LiPON and Li 2 Mn 2 O 4 thin films were fabricated by RF magnetron sputtering methods and the morphology of thin films were characterized by scanning electron microscopy. Then with these three materials deposited as the anode, solid electrolyte, cathode, and vanadium as current collector, a rocking-chair type of all-solid-state thin-film-type Lithium-ion rechargeable battery was prepared by using the same sputtering parameters on stainless steel substrates. Electrochemical studies show that the thin film battery has a good charge–discharge characteristic in the voltage range of 0.3–3.5 V, and after 30 cycles the cell performance turned to become stabilized with the charge capacity of 9 μAh/cm2, and capacity loss of single-cycle of about 0.2%. At the same time, due to electronic conductivity of the electrolyte film, self-discharge may exist, resulting in approximately 96.6% Coulombic efficiency.

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