Infrared Microthermography for Integrated Circuit Fault Location; Sensitivity and Limitations

ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2002p0163 ◽

2002 ◽

Author(s):

S. Kiefer ◽

M. Nair ◽

P. Sanders ◽

J. Steele ◽

M. Sutton ◽

...

Keyword(s):

Integrated Circuit ◽

Fault Location ◽

Numerical Models ◽

Hot Spot ◽

Semiconductor Devices ◽

Fault Identification ◽

Temperature Resolution ◽

Resolution Limits ◽

Infrared Microscope

Abstract In order to understand spatial and temperature resolution limits of an infrared microscope used for fault location in semiconductor devices, numerical models and bench methods are correlated and discussed. Results clearly show fault identification capability in the sub-micron realm and “hot-spot” resolution of a few tenths of a degree K.

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Microscale and Nanoscale Thermal Characterization Techniques

Journal of Electronic Packaging ◽

10.1115/1.2993145 ◽

2008 ◽

Vol 130 (4) ◽

Cited By ~ 76

Author(s):

J. Christofferson ◽

K. Maize ◽

Y. Ezzahri ◽

J. Shabani ◽

X. Wang ◽

...

Keyword(s):

Spatial Resolution ◽

Thermal Emission ◽

Background Radiation ◽

Hot Spot ◽

Single Point ◽

Thermal Characterization ◽

Temperature Resolution ◽

Characterization Techniques ◽

Resolution Limits ◽

Lock In

Miniaturization of electronic and optoelectronic devices and circuits and increased switching speeds have exasperated localized heating problems. Steady-state and transient characterization of temperature distribution in devices and interconnects is important for performance and reliability analysis. Novel devices based on nanowires, carbon nanotubes, and single molecules have feature sizes in 1–100 nm range, and precise temperature measurement and calibration are particularly challenging. In this paper we review various microscale and nanoscale thermal characterization techniques that could be applied to active and passive devices. Solid-state microrefrigerators on a chip can provide a uniform and localized temperature profile and they are used as a test vehicle in order to compare the resolution limits of various microscale techniques. After a brief introduction to conventional microthermocouples and thermistor sensors, various contact and contactless techniques will be reviewed. Infrared microscopy is based on thermal emission and it is a convenient technique that could be used with features tens of microns in size. Resolution limits due to low emissivity and transparency of various materials and issues related to background radiation will be discussed. Liquid crystals that change color due to phase transition have been widely used for hot spot identification in integrated circuit chips. The main problems are related to calibration and aging of the material. Micro-Raman is an optical method that can be used to measure absolute temperature. Micron spatial resolution with several degrees of temperature resolution has been achieved. Thermoreflectance technique is based on the change of the sample reflection coefficient as a function of temperature. This small change in 10−4–10−5 range per degree is typically detected using lock-in technique when the temperature of the device is cycled. Use of visible and near IR wavelength allows both top surface and through the substrate measurement. Both single point measurements using a scanning laser and imaging with charge coupled device or specialized lock-in cameras have been demonstrated. For ultrafast thermal decay measurement, pump-probe technique using nanosecond or femtosecond lasers has been demonstrated. This is typically used to measure thin film thermal diffusivity and thermal interface resistance. The spatial resolution of various optical techniques can be improved with the use of tapered fibers and near field scanning microscopy. While subdiffraction limit structures have been detected, strong attenuation of the signal reduces the temperature resolution significantly. Scanning thermal microscopy, which is based on nanoscale thermocouples at the tip of atomic force microscope, has had success in ultrahigh spatial resolution thermal mapping. Issues related to thermal resistance between the tip and the sample and parasitic heat transfer paths will be discussed.

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Automatic Determination of Optimal FIB Operations for Improved Circuit Probing and Fast Reconfiguration

ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2000p0407 ◽

2000 ◽

Author(s):

Romain Desplats ◽

Timothee Dargnies ◽

Jean-Christophe Courrege ◽

Philippe Perdu ◽

Jean-Louis Noullet

Keyword(s):

Integrated Circuit ◽

Focused Ion Beam ◽

Ion Beam ◽

Semiconductor Devices ◽

Front Side ◽

Automatic Determination ◽

Metal Line ◽

New Approach ◽

Metal Layers

Abstract Focused Ion Beam (FIB) tools are widely used for Integrated Circuit (IC) debug and repair. With the increasing density of recent semiconductor devices, FIB operations are increasingly challenged, requiring access through 4 or more metal layers to reach a metal line of interest. In some cases, accessibility from the front side, through these metal layers, is so limited that backside FIB operations appear to be the most appropriate approach. The questions to be resolved before starting frontside or backside FIB operations on a device are: 1. Is it do-able, are the metal lines accessible? 2. What is the optimal positioning (e.g. accessing a metal 2 line is much faster and easier than digging down to a metal 6 line)? (for the backside) 3. What risk, time and cost are involved in FIB operations? In this paper, we will present a new approach, which allows the FIB user or designer to calculate the optimal FIB operation for debug and IC repair. It automatically selects the fastest and easiest milling and deposition FIB operations.

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Application of Lock-in Thermography on PCB for Fault Localization and Validation of Failure Mechanism Due to External Discrete Component Variation

ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2010p0191 ◽

2010 ◽

Author(s):

William Ng ◽

Kevin Weaver ◽

Zachary Gemmill ◽

Herve Deslandes ◽

Rudolf Schlangen

Keyword(s):

Failure Mechanism ◽

Integrated Circuit ◽

Printed Circuit Board ◽

Hot Spot ◽

Circuit Board ◽

Discrete Component ◽

Printed Circuit ◽

Thermal Signature ◽

Lock In

Abstract This paper demonstrates the use of a real time lock-in thermography (LIT) system to non-destructively characterize thermal events prior to the failing of an integrated circuit (IC) device. A case study using a packaged IC mounted on printed circuit board (PCB) is presented. The result validated the failing model by observing the thermal signature on the package. Subsequent analysis from the backside of the IC identified a hot spot in internal circuitry sensitive to varying value of external discrete component (inductor) on PCB.

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IR Thermography for Temperature Measurements and Fault Location on AlGaN/GaN HEMTs and MMICs

ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2015p0253 ◽

2015 ◽

Author(s):

Lény Baczkowski ◽

Franck Vouzelaud ◽

Dominique Carisetti ◽

Nicolas Sarazin ◽

Jean-Claude Clément ◽

...

Keyword(s):

Fault Location ◽

Hot Spot ◽

Life Time ◽

High Electron Mobility Transistors ◽

Junction Temperature ◽

High Electron ◽

Ir Thermography ◽

Operating Life ◽

Gan Hemt ◽

Electron Mobility Transistors

Abstract This paper shows a specific approach based on infrared (IR) thermography to face the challenging aspects of thermal measurement, mapping, and failure analysis on AlGaN/GaN high electron-mobility transistors (HEMTs) and MMICs. In the first part of this paper, IR thermography is used for the temperature measurement. Results are compared with 3D thermal simulations (ANSYS) to validate the thermal model of an 8x125pm AIGaN/GaN HEMT on SiC substrate. Measurements at different baseplate temperature are also performed to highlight the non-linearity of the thermal properties of materials. Then, correlations between the junction temperature and the life time are also discussed. In the second part, IR thermography is used for hot spot detection. The interest of the system for defect localization on AIGaN/GaN HEMT technology is presented through two case studies: a high temperature operating life test and a temperature humidity bias test.

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