scholarly journals SIMULATION OF CURRENT-VOLTAGE CHARACTERISTICS OF SPIN FIELD EFFECT TRANSISTOR USING NEMO-VN2

2012 ◽  
Vol 15 (3) ◽  
pp. 5-16
Author(s):  
Hien Sy Dinh
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Graphic User Interface ◽  
Green Function Method ◽  
Spin Field ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Effect Transistor ◽  
Spin Fet

We have developed a simulator for nanoelectronics devices, NEMO-VN2. In this work, we provide an overview of spin field effect transistor. We use the simulator to explore the performance of spin FET. The model of the spin FET is based on non-equilibrium Green function method and implemented by using graphic user interface of Matlab. The current-voltage characteristics such as drain current-voltage, drain current-gate voltage ones are explored.

scholarly journals Simulation of current-voltage characteristics of graphene field effect transistor (GFET)

2013 ◽  
Vol 16 (3) ◽  
pp. 5-12
Author(s):  
Hien Sy Dinh
Keyword(s):  
Field Effect ◽  
Function Method ◽  
Field Effect Transistor ◽  
Graphic User Interface ◽  
Graphene Field Effect Transistor ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Effect Transistor ◽  
Graphene Fet ◽  
Non Equilibrium Green’S Function

Graphene has been one of the most vigorously studied research materials. We have developed a program for simulation of graphene field effect transistor (GFET). In this work, we use the simulation program to explore the performance of graphene FET. The simple model of the graphene FET is based on non-equilibrium Green’s function method and first is implemented by using graphic user interface of Matlab. The current-voltage characteristics of the GFET and affects of channel materials, gate materials, size of graphene FET, temperature on the characteristics are explored.

scholarly journals Development of Quantum Simulator for Emerging Nanoelectronics Devices

2012 ◽  
Vol 2012 ◽  
pp. 1-10
Author(s):  
Dinh Sy Hien
Keyword(s):  
Green’S Function ◽  
Green's Function ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Graphic User Interface ◽  
Quantum Devices ◽  
Tunneling Diode ◽  
Quantum Device ◽  
Current Voltage ◽  
Effect Transistor

We have developed NEMO-VN2, a new quantum device modeling tool that simulates a wide variety of quantum devices including the resonant tunneling diode, the single electron transistor, the molecular field effect transistor, the carbon nanotube field effect transistor, and the spin field effect transistor. In this work the nonequilibrium Green’s function is used to perform a comprehensive study of the emerging nanoelectronics devices. The program has been written by using graphic user interface of Matlab. NEMO-VN2 uses Matlab to solve Schrodinger equation to get current-voltage characteristics of quantum devices. In the paper, we present a short overview of the theoretical methodology using non-equilibrium Green’s function for modeling of various quantum devices and typical simulations used to illustrate the capabilities of the NEMO-VN2.

scholarly journals SIMULATING CHARACTERISTICS OF CARBON NANOTUBE FIELD- EFFECT TRANSISTOR (CNTFET)

2010 ◽  
Vol 13 (2) ◽  
pp. 15-27
Author(s):  
Hien Sy Dinh ◽  
Tuan Tran Anh Thi ◽  
Luong Thi Nguyen
Keyword(s):  
Field Effect Transistor ◽  
Oxide Thickness ◽  
Capacitive Coupling ◽  
Graphic User Interface ◽  
Current Voltage ◽  
Gate Oxide Thickness ◽  
Calculation Results ◽  
Current Voltage Characteristics ◽  
Effect Transistor ◽  
Non Equilibrium Green’S Function

We provide a model of coaxial CNTFET, using single wall nanotube. These devices would exhibit wrap-around gates that maximize capacitive coupling between the gate electrode and the nanotube channel. The results of simulations of I-V characteristics for CNTFETs are presented. Here we use non-equilibrium Green’s function (NEGF) to perform simulation for CNTFET. This simulator also includes a graphic user interface (GUI) of Matlab that enables parameter entry, calculation control, display of calculation results. In this work, we review the capabilities of the simulator, summarize the theoretical approach and experimental results. Current-voltage characteristics are a function of the variables such as: diameter of CNT, the length of CNT, the gate oxide thickness, gate voltage of Vg, types of materials of Source-Drain, Gate, and temperature. The obtained I-V characteristics of the CNTFET are also presented by analytical equations.

scholarly journals Current-voltage characteristics of a graphene-nanoribbon field-effect transistor

2008 ◽  
Vol 103 (9) ◽  
pp. 094510 ◽  
Author(s):  
V. Ryzhii ◽  
M. Ryzhii ◽  
A. Satou ◽  
T. Otsuji
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Graphene Nanoribbon ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Effect Transistor

scholarly journals SIMULATING CURRENT - VOLTAGE CHARACTERISTICS OF MOLECULAR TRANSISTOR FIELD EFFECT TRANSISTOR

2009 ◽  
Vol 12 (13) ◽  
pp. 5-12
Author(s):  
Hien Sy Dinh ◽  
Trung Hoang Huynh
Keyword(s):  
Field Effect ◽  
High Speed ◽  
Field Effect Transistor ◽  
Promising Alternative ◽  
Current Voltage ◽  
Significant Difference ◽  
Current Voltage Characteristics ◽  
Effect Transistor ◽  
Non Equilibrium Green’S Function ◽  
Material Temperature

Molecular Field Effect Transistor (MFET) is a promising alternative candidate of traditional MOSFET in future due to its small size, low power consumption and high speed. In this work, we introduce a model of three-terminal MFET. The structure of the MFET is in shape like traditional MOSFET, but its conductive channel is replaced by a benzene-1,4-dithiolate molecule. We use non-equilibrium Green's function method to compute transport function of charges and ultimately, the current-voltage (1-V) characteristics. The program is written by using graphic user guide (GUI) in Matlab. We have found significant difference of I-V characteristics between MOSFET and MFET. In addition, impacts of types of material, temperature, and bias on I-V characteristics of the MFET have been considered. Using GUI in Matlab, obtained results of simulations are intuitively displayed.

Sign in / Sign up

Export Citation Format

Share Document