Gate-Voltage-Modulated Spin Precession in Graphene/WS2 Field-Effect Transistors

Transition metal dichalcogenide materials are studied to investigate unexplored research avenues, such as spin transport behavior in 2-dimensional materials due to their strong spin-orbital interaction (SOI) and the proximity effect in van der Waals (vdW) heterostructures. Interfacial interactions between bilayer graphene (BLG) and multilayer tungsten disulfide (ML-WS2) give rise to fascinating properties for the realization of advanced spintronic devices. In this study, a BLG/ML-WS2 vdW heterostructure spin field-effect transistor (FET) was fabricated to demonstrate the gate modulation of Rashba-type SOI and spin precession angle. The gate modulation of Rashba-type SOI and spin precession has been confirmed using the Hanle measurement. The change in spin precession angle agrees well with the local and non-local signals of the BLG/ML-WS2 spin FET. The operation of a spin FET in the absence of a magnetic field at room temperature is successfully demonstrated.

Manipulation of the Rashba effect in layered tellurides MTe (M = Ge, Sn, Pb)

Designing an electric-field controlled Rashba spin FET on two-dimensional GeTe.

Ferroelectric Rashba semiconductors, AgBiP2X6 (X = S, Se and Te), with valley polarization: an avenue towards electric and nonvolatile control of spintronic devices

Coexistence of Rashba-type spin splitting (in-plane spin direction) and band splitting at the K/K′ valleys (out-of-plane spin direction) makes the FRS AgBiP2Te6 monolayer a promising candidate for 2D spin FET and spin/valley Hall effect devices.

Vertical ferroelectric switching by in-plane sliding of two-dimensional bilayer WTe2

Vertical ferroelectric switching by in-plane sliding of two-dimensional bilayer WTe2, leading to the spin texture and spin-FET design with strain tunability.