scholarly journals Odorant Binding Changes the Electrical Properties of Olfactory Receptors at the Nanoscale

2021 ◽  
Author(s):  
Anna Lagunas ◽  
Christine Belloir ◽  
Loic Briand ◽  
Pau Gorostiza ◽  
Josep Samitier
Keyword(s):  
Electrical Properties ◽  
Electrical Characterization ◽  
Olfactory Receptors ◽  
High Sensitivity ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Sensitivity And Selectivity ◽  
Fixed Orientation ◽  
Impedance Parameters ◽  
Odorant Binding

The transduction of odorant binding into cellular signaling by olfactory receptors (ORs) is not understood and knowing its mechanism would enable developing new pharmacology and biohybrid electronic detectors of volatile organic com-pounds bearing high sensitivity and selectivity. The electrical characterization of ORs in bulk experiments is subject to microscopic models and assumptions. We have directly determined the nanoscale electrical properties of ORs immobilized in a fixed orientation, and their change upon odorant binding, using electrochemical scanning tunneling microscopy (EC-STM) in near-physiological conditions. Recordings of current versus time, distance, and electrochemical potential allows determining the OR impedance parameters and their dependence with odorant binding. Our results allow validating OR structural-electrostatic models and their functional activation processes.

CORRELATION BETWEEN ATOMIC-SCALE STRUCTURES AND MACROSCOPIC ELECTRICAL PROPERTIES OF METAL-COVERED Si(111) SURFACES

1993 ◽  
Vol 07 (22) ◽  
pp. 3817-3876 ◽  
Author(s):  
SHUJI HASEGAWA ◽  
SHOZO INO
Keyword(s):  
Electrical Properties ◽  
Electronic States ◽  
High Energy ◽  
Schottky Barriers ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Surface Conductance ◽  
Tunneling Microscopy ◽  
Band Bending ◽  
Scale Structures

In this review, we discuss the relation between the atomic-scale structures (atomic arrangements and electronic states) and the macroscopic electrical properties (surface conductance and Schottky barriers) of metal(Ag, Au, or In)-covered Si (111) surfaces. These surfaces have been one of the most intensively investigated systems with the use of a variety of modern surface science techniques, and diversified information at atomic scales has been obtained. The data of reflection high-energy electron diffraction, scanning tunneling microscopy/spectroscopy, photoemission spectroscopies, and others are utilized here for characterizing the structures. Surface conductance and Schottky barriers, on the other hand, have also been the major areas in semiconductor physics for, especially device-oriented, research, but these have rarely been studied in combination with atomic-scale structures. These electrical properties have recently been found to be crucially dependent on the local atomic structures of well-defined surfaces/interfaces. The atomic arrangements and the resulting surface/interface electronic states govern the Fermi-level pinning and band bending which determine the electrical properties of semiconductor surfaces/interfaces.

A Comparative Study of the Reflectance Difference Spectrum from Si(001) Using Reflectance Difference Spectroscopy /Low-Energy Electron Diffraction/Scanning Tunneling Microscopy

1995 ◽  
Vol 406 ◽  
Author(s):  
Jia-Ling Lin ◽  
S. G. Jaloviar ◽  
L. Mantese ◽  
D. E. Aspnes ◽  
L. McCaughan ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Comparative Study ◽  
Scanning Tunneling Microscopy ◽  
High Sensitivity ◽  
Difference Spectrum ◽  
Scanning Tunneling ◽  
Difference Spectroscopy ◽  
Tunneling Microscopy ◽  
Reflectance Difference Spectroscopy ◽  
Low Energy Electron

AbstractFrom a comparative study using scanning tunneling microscopy, high-resolution lowenergy electron diffraction, and reflectance difference spectroscopy, we investigate the optical anisotropy on clean and H-covered Si(001) surfaces. We demonstrate a high sensitivity of reflectance difference spectroscopy to the surface tructural anisotropy and surface chemistry.

CURRENT–VOLTAGE PROPERTIES OF SELF-ASSEMBLY MONOLAYERS ON AU(111) SUBSTRATE USING SCANNING TUNNELING MICROSCOPY

2006 ◽  
Vol 05 (06) ◽  
pp. 907-911
Author(s):  
NAM-SUK LEE ◽  
HOON-KYU SHIN ◽  
YOUNG-SOO KWON
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Scanning Tunneling Microscopy ◽  
Self Assembly ◽  
Scanning Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Organic Thin Film ◽  
Tunneling Microscopy ◽  
Current Voltage ◽  
Self Assembled

This study observes the morphology of self-assembled organic thin film that is formed at room temperature using a Scanning Tunneling Microscopy (STM) and examines its electrical properties using a Scanning Tunneling Spectroscopy (STS). The specimen used in this experiment that has a functional group for both sides and will be controlled to make self-assembled onto the Au (111) substrate. After the dilution of the specimen by 1 mM/ml and self-assembled onto the Au (111) substrate. Using a STM, the images of organic thin film can be observed. In addition, the electrical properties of organic thin film can also be examined by the junction structure of STM–organic thin film– Au (111) substrate by using a STM tip. As a result, we measured current–voltage (I–V) curve using STS, I–V curve also clearly shows several current peaks between the negative bias region (-1.42 V) and the positive bias region (1.30 V), respectively.

NANOTUBE TIP FOR STM

2003 ◽  
Vol 02 (04n05) ◽  
pp. 293-298
Author(s):  
WATARU MIZUTANI ◽  
HIDEKAZU ABE ◽  
AYUMU YASUDA ◽  
ATSUSHI ANDO ◽  
TETSUO SHIMIZU ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Carbon Nanotube ◽  
Electrical Properties ◽  
Scanning Tunneling Microscopy ◽  
Electrical Conduction ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Multiwalled Carbon ◽  
Metallic Behavior ◽  
Current Voltage

We are investigating electrical properties of multiwalled carbon nanotube (CNT) probes for scanning tunneling microscopy (STM). To improve the electrical conduction and reduce the contamination at the interface to the gold base, we selected conductive CNTs and heated the base and CNT during the CNT attaching process. Before STM measurements, the probes were cleaned by annealing in vacuum for 4–8 h. With these treatments, we found a small number of tips exhibiting linear metallic current–voltage (I–V) curves on Au(111), while all the CNT tips attached on gold (not heated) exhibited nonlinear I–V curves. We discuss the possibility that the metallic behavior of the CNT probes may be caused by the diffused gold atoms along the CNT surfaces by the long heat treatment.

Surface Phases of Metals on Silicon as Material for Surface Engineering

2001 ◽  
Vol 697 ◽  
Author(s):  
Alexander A. Saranin ◽  
Sergey V. Rizhkov ◽  
Dmitriy A. Tsukanov ◽  
Victor G. Lifshits ◽  
Andrey V. Zotov ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electrical Resistance ◽  
Surface Engineering ◽  
High Energy ◽  
Scanning Tunneling ◽  
High Energy Electron ◽  
Tunneling Microscopy ◽  
Surface Phases ◽  
Electrical Resistance Measurements

AbstractTo study structural and transport properties of the surface phases on silicon, a number of adsorbate/silicon systems on Si(100) and Si(111) surfaces has been investigated using scanning tunneling microscopy (STM), reflection-high-energy-electron diffraction (RHEED) and in-situ electrical resistance measurements. Results of investigations of formation and electrical properties of Si-Al, Si-Na, Si-Ag and Si-In surface structure are presented.

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