scholarly journals Uniform Strain-Dependent Thermal Conductivity of Pentagonal and Hexagonal Silicene

2021 ◽  
Vol 8 ◽  
Author(s):  
Huake Liu ◽  
Guangzhao Qin ◽  
Ming Hu

Two-dimensional (2D) pentagonal monolayer structures have shown promising characteristics and fascinating physical and chemical properties. The disparate strain-dependent thermal conductivity of two-dimensional penta-structures was reported, but the difference between the silicon-based pentagonal and hexagonal structures is barely researched. In this work, based on first-principles calculations, we studied the strain-modulated phonon transport behavior of two 2D pentagonal (penta-SiH and bilayer penta-Si) and one hexagonal silicene structures (H-silicene), of which the penta-SiH and H-silicene mean the structures are hydrogenated for the purpose of thermodynamical stability. We found that the silicon-based pentagonal structure also presented a different strain-dependent thermal conductivity from other pentagonal materials, such as penta-graphene, penta-SiC, or penta-SiN. Moreover, even with the similar strain-dependent thermal transport behavior in penta-SiH and bilayer penta-silicene, we find that the governing mechanism is still different. For both pentagonal silicene structures, the thermal conductivity presents a large improvement at first as the tensile strain increases from 0 to 10% and then stabilizes with a strain larger than 10%. A detailed analysis shows that the in-plane modes contributed the most part to the group velocity enhancement under strains in penta-SiH which is opposite from the bilayer penta-graphene, although the phonon group velocity and phonon lifetime of both structures increase with applied strain. On the other hand, a similarity was found in pentagonal silicene and hexagonal silicene despite the differences in geometry structures. Furthermore, based on the detailed analysis between the pentagonal (penta-SiH) and hexagonal silicene structures (H-silicene), the difference in out-of-plane phonon scattering cannot be ignored: different major scattering channels of the out-of-plane flexural modes result in different thermal conductivity sensitivity to strains, and the disparity in anharmonicity leads to different thermal conductivity under no strain.

2012 ◽  
Vol 26 (17) ◽  
pp. 1250104 ◽  
Author(s):  
B. S. YILBAS ◽  
S. BIN MANSOOR

Phonon transport in two-dimensional silicon and aluminum films is investigated. The frequency dependent solution of Boltzmann transport equation is obtained numerically to account for the acoustic and optical phonon branches. The influence of film size on equivalent equilibrium temperature distribution in silicon and aluminum films is presented. It is found that increasing film width influences phonon transport in the film; in which case, the difference between the equivalent equilibrium temperature due to silicon and diamond films becomes smaller for wider films than that of the thinner films.


2003 ◽  
Vol 793 ◽  
Author(s):  
Ronggui Yang ◽  
Gang Chen

ABSTRACTA phonon Boltzmann transport model is established to study the lattice thermal conductivity of nanocomposites with nanowires embedded in a host semiconductor material. Special attention has been paid to cell-cell interaction using periodic boundary conditions. The simulation shows that the temperature profiles in nanocomposites are very different from those in conventional composites, due to ballistic phonon transport at nanoscale. The thermal conductivity of periodic 2-D nanocomposites is a strong function of the size of the embedded wires and the volumetric fraction of the constituent materials. At constant volumetric fraction the smaller the wire diameter, the smaller is the thermal conductivity of periodic two-dimensional nanocomposites. For fixed silicon wire dimension, the lower the atomic percentage of germanium, the lower the thermal conductivity of the nanocomposites. The results of this study can be used to direct the development of high efficiency thermoelectric materials.


Nano Letters ◽  
2016 ◽  
Vol 16 (6) ◽  
pp. 3831-3842 ◽  
Author(s):  
Huake Liu ◽  
Guangzhao Qin ◽  
Yuan Lin ◽  
Ming Hu

2015 ◽  
Vol 1105 ◽  
pp. 110-114 ◽  
Author(s):  
Emmanuel Dioresma Monterola ◽  
Naomi Tabudlong Paylaga ◽  
Giovanni Jariol Paylaga ◽  
Rolando Viño Bantaculo

Silicene is a two-dimensional (2D) allotrope of silicon known to have a lower thermal conductivity than graphene; thus, more suitable for thermoelectric applications. This paper investigates the effect of hydrogenation on the thermal conductivity of silicene nanoribbon (SiNR) using equilibrium molecular dynamics (EMD) simulations. The simulations were carried out in Large-scale Atomic/Molecular Massively Parallel Simulator (LAMMPS) using a modified Tersoff potential that considers both Si-Si and Si-H interactions. The thermal conductivity of fully hydrogenated silicene nanoribbon (H-SiNR), also known as silicane nanoribbon, was found to be higher than that of pristine SiNR in all the temperatures and dimensions considered here. This anomalous enhancement in the thermal conductivity is similar to that found in hydrogenated silicon nanowires (H-SiNWs). A mechanism for this anomalous effect has been proposed relating the hydrogenation of SiNR with the stiffening and increase of the acoustic out-of-plane flexural (ZA) phonon modes. Also, for both SiNR and H-SiNR, the thermal conductivities generally increase as the dimensions are increased while they generally decrease as the temperatures are increased, in agreement to other reports.


ACS Nano ◽  
2021 ◽  
Author(s):  
Alexander D. Christodoulides ◽  
Peijun Guo ◽  
Lingyun Dai ◽  
Justin M. Hoffman ◽  
Xiaotong Li ◽  
...  

1998 ◽  
Vol 507 ◽  
Author(s):  
Lin Jiang ◽  
Eric A. Schiff ◽  
Qi Wang ◽  
S. Guha ◽  
J. Yang

ABSTRACTGrazing-incidence measurements of polarized electroabsorption (EA) in p-i-n solar cells based on hydrogenated amorphous silicon (a-Si:H) are presented. We confirm polarized electroabsorption effect of a-Si:H with the present “sandwich” electrodes, in fact, we find a significantly stronger polarization dependence compared with earlier work based on electroabsorption detected using coplanar electrodes on a-Si:H thin films. We did not reproduce the significant dependence of the polarized electroabsorption upon light soaking, which was found in previous work with coplanar electrodes. We speculate the difference between two electrode geometries is due to the space charge and two dimensional fields.


Author(s):  
Chen Shen ◽  
Niloofar Hadaeghi ◽  
Harish K. Singh ◽  
Teng Long ◽  
Ling Fan ◽  
...  

With the successful synthesis of the two-dimensional (2D) gallium nitride (GaN) in a planar honeycomb structure, the phonon transport properties of 2D GaN have been reported. However, it still remains...


RSC Advances ◽  
2016 ◽  
Vol 6 (74) ◽  
pp. 69956-69965 ◽  
Author(s):  
Yang Han ◽  
Jinming Dong ◽  
Guangzhao Qin ◽  
Ming Hu

Lower thermal conductivity and intrinsic electronic bandgap make large honeycomb dumbbell silicene/germanene prospective in future thermoelectrics.


Author(s):  
Haider Ali ◽  
Bekir S. Yilbas

Abstract.Phonon transport in a two-dimensional thin silicon film is considered and the effect of heat source size and the film thickness on the transport characteristics is examined. Frequency dependent Boltzmann equation is incorporated in the analysis to account for the contribution of the ballistic phonons to the energy transport. Equivalent equilibrium temperature is introduced to assess the thermal resistance during the phonon transport in the film. The numerical scheme with the appropriate boundary conditions is used to predict the transport properties, including the effective thermal conductivity, of the thin film. It is found that the heat source size and the film thickness influence the thermal resistance of the film almost equally. The ballistic phonons reduce the film thermal resistance while suppressing the effective thermal conductivity in the thin film.


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