scholarly journals Effect of the Incoherent Encapsulation Layer and Oblique Sunlight Incidence on the Optical and Current-Voltage Characteristics of Surface-Textured Cu(In,Ga)Se2 Solar Cells Based on the Angle-Dependent Equispaced Thickness Averaging Method

2021 ◽  
Vol 11 (5) ◽  
pp. 2121
Author(s):  
Gyeongjun Lee ◽  
Jiyong Kim ◽  
Sungchul Kim ◽  
Jungho Kim
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Averaging Method ◽  
Ethylene Vinyl Acetate ◽  
Glass Layer ◽  
Cover Glass ◽  
Cigs Solar Cell ◽  
Current Voltage ◽  
Calculation Results ◽  
Cigs Solar Cells

In general, the optical and electrical characteristics of Cu(In,Ga)Se2 (CIGS) solar cells have been studied under the condition that sunlight is normally incident from the air to the CIGS solar cell having no thick front encapsulation layers. To obtain the calculation results in a realistic module application, we calculate the optical and current–voltage (J–V) characteristics of surface-textured CIGS solar cells by simultaneously considering the thick front encapsulation layers and oblique sunlight incidence. Using the proposed angle-dependent equispaced thickness averaging method (ADETAM), we incoherently model two successive front encapsulation layers of a cover glass layer and an ethylene vinyl acetate (EVA) layer, whose respective thicknesses are greater than the coherence length of sunlight (~0.6 μm). The angular dependences of reflectance spectrum and J–V curves are calculated and compared in a surface-textured CIGS solar cell with and without the inclusion of the two front encapsulation layers. We show that the optical absorption improvement of the surface-textured CIGS solar cell over the planar CIGS solar cell can be over-predicted when the thick front encapsulation layers are not considered in the optical modeling.

scholarly journals Characteristics of an oxide/metal/oxide transparent conducting electrode fabricated with an intermediate Cu–Mo metal composite layer for application in efficient CIGS solar cell

RSC Advances ◽  
2017 ◽  
Vol 7 (76) ◽  
pp. 48113-48119 ◽  
Author(s):  
San Kang ◽  
R. Nandi ◽  
Jae-Kwan Sim ◽  
Jun-Yong Jo ◽  
Uddipta Chatterjee ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Metal Oxide ◽  
Composite Layer ◽  
Metal Composite ◽  
Cigs Solar Cell ◽  
Transparent Conducting ◽  
Different Types ◽  
Cigs Solar Cells ◽  
Transparent Conducting Electrodes

CIGS solar cells fabricated with different types of AZO/metal/AZO (AZO/Cu/AZO, AZO/Mo/AZO and AZO/Cu–Mo/AZO) transparent conducting electrodes.

Application of a Sn4+ doped In2S3 thin film in a CIGS solar cell as a buffer layer

2020 ◽  
Vol 4 (1) ◽  
pp. 362-368 ◽  
Author(s):  
SeongYeon Kim ◽  
Md. Salahuddin Mina ◽  
Kiwhan Kim ◽  
Jihye Gwak ◽  
JunHo Kim
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Buffer Layer ◽  
Cigs Solar Cell ◽  
In2s3 Thin Film ◽  
Cigs Solar Cells

As a Cd-free buffer, In2S3 buffer has been used in Cu(In,Ga)Se2 (CIGS) solar cells.

scholarly journals Characterization and Analysis of Ultrathin CIGS Films and Solar Cells Deposited by 3-Stage Process

2018 ◽  
Vol 2018 ◽  
pp. 1-9 ◽  
Author(s):  
Grace Rajan ◽  
Krishna Aryal ◽  
Shankar Karki ◽  
Puruswottam Aryal ◽  
Robert W. Collins ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Large Scale ◽  
Open Circuit ◽  
Ex Situ ◽  
Photovoltaic Application ◽  
Current Voltage ◽  
Stage Process ◽  
Cigs Solar Cells ◽  
The Cost

In view of the large-scale utilization of Cu(In,Ga)Se2 (CIGS) solar cells for photovoltaic application, it is of interest not only to enhance the conversion efficiency but also to reduce the thickness of the CIGS absorber layer in order to reduce the cost and improve the solar cell manufacturing throughput. In situ and real-time spectroscopic ellipsometry (RTSE) has been used conjointly with ex situ characterizations to understand the properties of ultrathin CIGS films. This enables monitoring the growth process, analyzing the optical properties of the CIGS films during deposition, and extracting composition, film thickness, grain size, and surface roughness which can be corroborated with ex situ measurements. The fabricated devices were characterized using current voltage and quantum efficiency measurements and modeled using a 1-dimensional solar cell device simulator. An analysis of the diode parameters indicates that the efficiency of the thinnest cells was restricted not only by limited light absorption, as expected, but also by a low fill factor and open-circuit voltage, explained by an increased series resistance, reverse saturation current, and diode quality factor, associated with an increased trap density.

scholarly journals Numerical Investigation of Cu2O as Hole Transport Layer for High-Efficiency CIGS Solar Cell

2021 ◽  
Author(s):  
Muhammad Hassan Yousuf ◽  
Faisal Saeed ◽  
Haider Ali Tauqeer
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Wide Band ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Cell Efficiency ◽  
Cigs Solar Cell ◽  
Cigs Solar Cells

Copper indium gallium selenide (CIGS) is an inexpensive material that has the potential to dominate the next-generation photovoltaic (PV) industry. Here we detail computational investigation of CIGS solar cell with encouragement of adopting cuprous dioxide (Cu2O) as a Hole Transport Layer (HTL) for efficient fabricated CIGS solar cells. Although Cu2O as a HTL has been studied earlier for perovskite and other organic/inorganic solar cell yet no study has been detailed on potential application of Cu2O for CIGS solar cells. With the proposed architecture, recombination losses are fairly reduced at the back contact and contribute to enhanced photo-current generation. With the introduction of Cu2O, the overall cell efficiency is increased to 26.63%. The wide-band of Cu2O pulls holes from the CIGS absorber which allows smoother extraction of holes with experiencing lesser resistance. Further, it was also inferred that, HTL also improves the quantum efficiency (QE) for photons with large wavelengths thus increases the cell operating spectrum.

Impact of doping concentration, thickness, and band-gap on individual layer efficiency of CIGS solar cell

2021 ◽  
pp. 2151022
Author(s):  
Kitalu Ricin Ngoy ◽  
Abhay Kumar Singh ◽  
Tien-Chien Jen
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Layer Thickness ◽  
Current Density ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Individual Layer ◽  
Cigs Solar Cell ◽  
Highly Efficient ◽  
Cigs Solar Cells

An investigation with the individual layer physical property of the CIGS solar cells is a significant parameter to design and fabricate highly efficient devices. Therefore, this work demonstrates the thickness and carrier concentrations doping dependence simulations using SCAPS 1D software. The optimized CIGS solar cells different layer properties such as short-circuit current density ([Formula: see text], open-circuit voltage ([Formula: see text], Fill Factor (FF) and conversion efficiency ([Formula: see text] with varying thickness and doped concentration are presented. This optimized layer by layer simulation work would be useful to build a suitable CIGS solar cell structure. This simulation investigation showed that an optimal CIGS device structure can be fabricated possessing the configuration of a window layer ZnO : Al thickness 0.02 [Formula: see text]m, ZnO layer thickness 0.01 [Formula: see text] m with [Formula: see text] = 10[Formula: see text] cm[Formula: see text] and [Formula: see text] = 10[Formula: see text] cm[Formula: see text], a CdS buffer layer thickness 0.01 [Formula: see text]m with [Formula: see text] = 10[Formula: see text] cm[Formula: see text] and absorber layer CIGS in the thickness range of 1–4 [Formula: see text]m with the doping level range [Formula: see text] = 10[Formula: see text]–10[Formula: see text] cm[Formula: see text], along with the optimal CIGS energy bandgap range of 1.3–1.45 eV. According to optimized simulation results, a CIGS solar cell device can possess electric efficiency 26.61%, FF 82.96%, current density of 38.21 mA/cm2 with the open circuit voltage 0.7977 eV. Hence, these optimized simulation findings could be helpful to provide a path to design and fabricate highly efficient CIGS solar cells devices.

Highly improvement in efficiency of Cu(In,Ga)Se2 thin film solar cells

2020 ◽  
Vol 17 (4) ◽  
pp. 527-533
Author(s):  
Mohsen Sajadnia ◽  
Sajjad Dehghani ◽  
Zahra Noraeepoor ◽  
Mohammad Hossein Sheikhi
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
Trap Density ◽  
Thin Film Solar Cells ◽  
Content Type ◽  
Cigs Thin Film ◽  
Absorbing Layer ◽  
Cigs Solar Cells

Purpose The purpose of this study is to design and optimize copper indium gallium selenide (CIGS) thin film solar cells. Design/methodology/approach A novel bi-layer CIGS thin film solar cell based on SnS is designed. To improve the performance of the CIGS based thin film solar cell a tin sulfide (SnS) layer is added to the structure, as back surface field and second absorbing layer. Defect recombination centers have a significant effect on the performance of CIGS solar cells by changing recombination rate and charge density. Therefore, performance of the proposed structure is investigated in two stages successively, considering typical and maximum reported trap density for both CIGS and SnS. To achieve valid results, the authors use previously reported experimental parameters in the simulations. Findings First by considering the typical reported trap density for both SnS and CIGS, high efficiency of 36%, was obtained. Afterward maximum reported trap densities of 1 × 1019 and 5.6 × 1015 cm−3 were considered for SnS and CIGS, respectively. The efficiency of the optimized cell is 27.17% which is achieved in CIGS and SnS thicknesses of cell are 0.3 and 0.1 µm, respectively. Therefore, even in this case, the obtained efficiency is well greater than previous structures while the absorbing layer thickness is low. Originality/value Having results similar to practical CIGS solar cells, the impact of the defects of SnS and CIGS layers was investigated. It was found that affixing SnS between CIGS and Mo layers causes a significant improvement in the efficiency of CIGS thin-film solar cell.

Characterization of Cu(In,Ga)Se2/Mo Interface in CIGS Solar Cells

1997 ◽  
Vol 485 ◽  
Author(s):  
S. Nishiwaki ◽  
N. Kohara ◽  
T. Negami ◽  
M. Nishitani ◽  
T. Wada
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Soda Lime ◽  
Film Deposition ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Current Voltage ◽  
Stage Process ◽  
Cigs Solar Cells

AbstractThe interface between a Cu(In,Ga)Se2 (CIGS) and an underlying Mo layer was studied by X-ray diffraction and high resolution transmission electron microscopy. The CIGS layer was deposited onto Mo coated soda-lime glass using the “3-stage” process. A MoSe2 layer found to form at the CIGS/Mo interface during the 2nd stage of the “3-stage” process. The thickness of the MoSe2 layer depended on the substrate temperature used for CIGS film deposition as well as the Na content of the CIGS and/or Mo layers. For higher substrate temperatures, thicker MoSe2 layers were observed. The Na in the CIGS and/or Mo layer is felt to assist in the formation of MoSe2. Current-Voltage measurements of the heterojunction formed by the CIGS/Mo interface were ohmic even at low temperature. The role of the MoSe2 layer in high efficiency CIGS solar cells is discussed.

Non-Isothermal Modeling of Dark Current-Voltage Measurements of a CIGS Solar Cell

2018 ◽  
Vol 7 (2) ◽  
pp. P50-P54 ◽  
Author(s):  
Ana Obradović ◽  
Kenneth Toch ◽  
Bert Coppens ◽  
Samira Khelifi ◽  
Johan Lauwaert ◽  
...  
Keyword(s):  
Solar Cell ◽  
Dark Current ◽  
Cigs Solar Cell ◽  
Current Voltage

scholarly journals Correlation of Different Electrical Parameters of Solar Cells with Silver Front Electrodes

Materials ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 366 ◽  
Author(s):  
Małgorzata Musztyfaga-Staszuk ◽  
Damian Janicki ◽  
Piotr Panek
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Electrical Properties ◽  
Strongly Correlated ◽  
Electrical Parameters ◽  
Cell Parameters ◽  
Current Voltage ◽  
Comparison Results ◽  
Tlm Method ◽  
Photovoltaic Solar Cells

This work presents comparison results of the selected electrical parameters of silicon solar cells manufactured with silver front electrodes which were co-fired in an infrared belt furnace in the temperature range of 840–960 °C. The commercial paste (PV19B) was used for the metallization process. Electrical properties of a batch of solar cells fabricated in one cycle were investigated. Three methods were used, including measurement of the current-voltage characteristics (I-V), measurement of contacts’ resistivity using the transmission Line model method (TLM), and measurement of contacts’ resistivity using the potential difference method (PD). This work is focused on both the different metallization temperatures of co-firing of solar cells and measurements using the above-mentioned methods. It is shown that the solar cell parameters measured with three methods have different, but strongly correlated values. Moreover, the comparative analysis was performed of the investigations of the same photovoltaic solar cells using both the TLM method and independent research stands (including one non-commercial and two commercial ones) at three different scientific units. In the PD and TLM methods, the same calculation formulae are used. It can be stated, comparing methods I-V, PD, and TLM, that for each, different parameters are determined to assess the electrical properties of the solar cell.

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