scholarly journals Preliminary Evaluation of Pentacene Field Effect Transistors with Polymer Gate Electret as Ionizing Radiation Dosimeters

2021 ◽  
Vol 11 (23) ◽  
pp. 11368
Author(s):  
Irina Valitova ◽  
Alexandria Mitchell ◽  
Michael A. Hupman ◽  
Ian G. Hill ◽  
Alasdair Syme

Interest in the use of organic electronic devices in radiation sensing applications has grown in recent years. The numerous device configurations (e.g., diodes, thin film transistors) and potential for improved tissue equivalence compared to their silicon-based analogues make them attractive candidates for various radiation dosimetry measurements. In this work, a variation of the organic thin film transistor (OTFT) is studied, in which a polymer electret is added. An OTFT electret design can be used in either a wired or wireless configuration for in vivo dosimetry with the possibility of real-time detection. The linearity, reproducibility, and dependence on energy of these devices were measured through exposure to 100 kVp photons from an orthovoltage treatment unit (Xstrahl 300) and 6 MV photons from a Varian TrueBeam medical linear accelerator. Prior to irradiation, all transistors were programmed with a −80 V bias applied to the Gate electrode (Vg) for 3 s. In the wireless configuration, after each delivered dose, the transfer characteristic was scanned to readout the amount of erased charges by monitoring the drain current change. When the programmed charge was sufficiently depleted by radiation, transistors were reprogrammed for repeated use. The real-time readout in a wired configuration was performed by measuring the drain current with Vg = −15 V; Vd = −15 V. The 6 MV photon beam was turned on and off at different dose rates of 600, 400, 300, 200, and 60 cGy/min to quantify the sensitivity of the device to changes in dose rate. The wireless transistors showed a linear increase in current with increasing dose. The sensitivities for different energies were 60 ± 5 nA/Gy at 6 MV at a dose rate of 600 cGy/min and 80 ± 10 nA/Gy at 100 kVp at a dose rate of 200 cGy/min. The sensitivity of detectors tested in a wired configuration at Vd = −15 V; Vg = −15 V was 8.1 nA/s at a dose rate of 600 cGy/min. The principle of pentacene OTFTs with polymer electret as radiation detectors was demonstrated. Devices had excellent linearity, reproducibility, and were able to be reprogrammed for multiple uses as wireless detectors. The wired transistors demonstrated an effective response as real-time detectors.

2005 ◽  
Vol 127 (8) ◽  
pp. 2406-2407 ◽  
Author(s):  
Hong Meng ◽  
Fangping Sun ◽  
Marc B. Goldfinger ◽  
Gary D. Jaycox ◽  
Zhigang Li ◽  
...  

1999 ◽  
Vol 598 ◽  
Author(s):  
P. V. Necliudov ◽  
D. J. Gundlach ◽  
T. N. Jackson ◽  
S. L. Rumyantsev ◽  
M. S. Shur

ABSTRACTWe studied the low frequency noise in top-contact pentacene Thin Film Transistors (TFTs). The relative spectral noise density of the drain current fluctuations SI/I2 had a form of 1/f noise in the measured frequency range 1Hz - 3.5kHz.Our studies of the noise dependencies on the gate-source VGS and drain-source VDS voltages showed that the dependencies differed from those observed for conducting polymers and resembled those reported for crystalline Si n-MOSFETs.To compare the device noise level with those of other devices and materials, we extracted the Hooge parameter α. In order to calculate the total number of carriers we used a model simulating the device DC characteristics, similar to that for amorphous Si TFTs. The extracted Hooge parameter was 0.04. For an organic material this is an extremely small value, which is three orders of magnitude smaller that the Hooge parameter values reported for conducting polymers and only several times higher than the values for amorphous Si TFTs.


2020 ◽  
Vol 7 (9) ◽  
pp. 2390-2398
Author(s):  
Hamna F. Iqbal ◽  
Emma K. Holland ◽  
John E. Anthony ◽  
Oana D. Jurchescu

Access to the dynamics of trap annihilation/generation resulting from isomer rearrangement identifies the performance-limiting processes in organic thin-film transistors.


2004 ◽  
Vol 21 (1) ◽  
pp. 164-165 ◽  
Author(s):  
Zhang Su-Mei ◽  
Shi Jia-Wei ◽  
Liu Ming-Da ◽  
Li Jing ◽  
Guo Shu-Xu ◽  
...  

2003 ◽  
Vol 83 (8) ◽  
pp. 1644-1646 ◽  
Author(s):  
Yong Qiu ◽  
Yuanchuan Hu ◽  
Guifang Dong ◽  
Liduo Wang ◽  
Junfeng Xie ◽  
...  

2020 ◽  
Vol 67 (11) ◽  
pp. 4667-4671
Author(s):  
Aristeidis Nikolaou ◽  
Ghader Darbandy ◽  
Jakob Leise ◽  
Jakob Pruefer ◽  
James W. Borchert ◽  
...  

2015 ◽  
Vol 11 (6) ◽  
pp. 559-563 ◽  
Author(s):  
Deyu Tu ◽  
Kazuo Takimiya ◽  
Ute Zschieschang ◽  
Hagen Klauk ◽  
Robert Forchheimer

2016 ◽  
Vol 52 (27) ◽  
pp. 4926-4929 ◽  
Author(s):  
Kazuaki Oniwa ◽  
Hiromasa Kikuchi ◽  
Thangavel Kanagasekaran ◽  
Hidekazu Shimotani ◽  
Susumu Ikeda ◽  
...  

Two new regiospecific biphenyl end-capped bithiazole co-oligomers, BP2Tz(in) and BP2Tz(out), showed high hole mobilities of 3.5 and 0.4 cm2 V−1 s−1, respectively, in thin film field effect transistors.


2012 ◽  
Vol 51 (4S) ◽  
pp. 04DK07 ◽  
Author(s):  
Akinori Okada ◽  
Yoshihide Fukaya ◽  
Shu Hotta ◽  
Takeshi Yamao

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