Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure
2004 ◽
Vol 43
(4B)
◽
pp. 2239-2242
◽
2019 ◽
Vol 19
(4)
◽
pp. 2319-2322
◽
2019 ◽
Vol 19
(4)
◽
pp. 2298-2301
◽
2018 ◽
Vol 18
(9)
◽
pp. 5860-5867
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Keyword(s):
2019 ◽
Vol 10
(1)
◽
pp. 398