A novel double field-plate power high electron mobility transistor based on AlGaN/GaN for performance improvement
2004 ◽
Vol 43
(4B)
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pp. 2239-2242
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Keyword(s):
2019 ◽
Vol 10
(1)
◽
pp. 398
2010 ◽
Vol 31
(7)
◽
pp. 677-679
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2019 ◽
Vol 19
(4)
◽
pp. 2319-2322
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2019 ◽
Vol 19
(4)
◽
pp. 2298-2301
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