Enhancement-Mode High Electron Mobility Transistor on SiC Substrate with T-Gate Field Plate for High Power Applications

2019 ◽  
pp. 289-299
Author(s):  
Subhash Chander ◽  
Ajay ◽  
Mridula Gupta
Keyword(s):  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Field Plate ◽  
Enhancement Mode

scholarly journals A modeling and performance of the triple field plate HEMT

2019 ◽  
Vol 10 (1) ◽  
pp. 398
Author(s):  
Kourdi Zakarya ◽  
Abdelkhader Hamdoun
Keyword(s):  
Aluminum Oxide ◽  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Field Plate ◽  
Field Peak ◽  
And Performance ◽  
Multiple Field

We present this work by two steps. In the first one, the new structure proposed of the FP-HEMTs device (Field plate High Electron Mobility Transistor) with a T-gate on an 4H-SIC substrate to optimize these electrical performances, multiple field-plates were used with aluminum oxide to split the single electric field peak into several smaller peaks, and as passivation works to reduce scaling leakage current. In the next, we include a modeling of a simulation in the Tcad-Silvaco Software for realizing the study of the influence of negative voltage applied to gate T-shaped in OFF state time and high power with ambient temperature, the performance differences between the 3FP and the SFP devices are discussed in detail.

Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application

2006 ◽  
Vol 45 (No. 35) ◽  
pp. L932-L934 ◽  
Author(s):  
Li-Hsin Chu ◽  
Heng-Tung Hsu ◽  
Edward-Yi Chang ◽  
Tser-Lung Lee ◽  
Sze-Hung Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode

Applications of GaN-Based High Electron Mobility Transistors in Large-Size Devices

2015 ◽  
Vol 764-765 ◽  
pp. 486-490
Author(s):  
Chih Hao Wang ◽  
Liang Yu Su ◽  
Finella Lee ◽  
Jian Jang Huang
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Saturation Current ◽  
High Electron Mobility ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Large Size ◽  
Novel Design

We demonstrate a novel design of large-size device in AlGaN/GaN high-electron-mobility transistor (HEMT). Depletion mode (D-mode) HEMTs and enhancement mode (E-mode) HEMTs are fabricated in our research. The saturation current of D-mode HEMTs is over 6A. By using Cascode structure, the D-mode HEMT becomes a normally-off device efficiently, and the threshold voltage of it rises from-7V to 2V. By using BCB (Benzocyclobutene) as the passivation, the E-mode HEMT shows an excellent characteristic. Also, when the VGS of the E-mode HEMT is over 9V, it still shows a good performance.

High-power AlGaN∕GaN dual-gate high electron mobility transistor mixers on SiC substrates

2004 ◽  
Vol 40 (12) ◽  
pp. 775 ◽  
Author(s):  
K. Shiojima ◽  
T. Makimura ◽  
T. Kosugi ◽  
S. Sugitani ◽  
N. Shigekawa ◽  
...  
Keyword(s):  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Dual Gate
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