scholarly journals Triple Planar Heterojunction of SnO2/WO3/BiVO4 with Enhanced Photoelectrochemical Performance under Front Illumination

2018 ◽  
Vol 8 (10) ◽  
pp. 1765 ◽  
Author(s):  
Swetha Bhat ◽  
Sol Lee ◽  
Jun Suh ◽  
Seung-Pyo Hong ◽  
Ho Jang

The performance of a BiVO4 photoanode is limited by poor charge transport, especially under front side illumination. Heterojunction of different metal oxides with staggered band configuration is a promising route, as it facilitates charge separation/transport and thereby improves photoactivity. We report a ternary planar heterojunction photoanode with enhanced photoactivity under front side illumination. SnO2/WO3/BiVO4 films were fabricated through electron beam deposition and subsequent wet chemical method. Remarkably high external quantum efficiency of ~80% during back side and ~90% upon front side illumination at a wavelength of 400 nm has been witnessed for SnO2/WO3/BiVO4 at 1.23 V vs. reversible hydrogen electrode (RHE). The intimate contact between the heterojunction films enabled efficient charge separation at the interface and promoted electron transport. This work provides a new paradigm for designing triple heterojunction to improve photoactivity, particularly under front illumination, which would be beneficial for the development of tandem devices.

2019 ◽  
Vol 2 (2) ◽  
pp. 1027-1032 ◽  
Author(s):  
Yulu Zhou ◽  
Sizhuo Yang ◽  
Donghua Fan ◽  
Jake Reilly ◽  
Hongwei Zhang ◽  
...  

Sensors ◽  
2020 ◽  
Vol 20 (18) ◽  
pp. 5138
Author(s):  
Jimin Lee ◽  
Sang-Hwan Kim ◽  
Hyeunwoo Kwen ◽  
Juneyoung Jang ◽  
Seunghyuk Chang ◽  
...  

This paper presents a CMOS depth image sensor with offset pixel aperture (OPA) using a back-side illumination structure to improve disparity. The OPA method is an efficient way to obtain depth information with a single image sensor without additional external factors. Two types of apertures (i.e., left-OPA (LOPA) and right-OPA (ROPA)) are applied to pixels. The depth information is obtained from the disparity caused by the phase difference between the LOPA and ROPA images. In a CMOS depth image sensor with OPA, disparity is important information. Improving disparity is an easy way of improving the performance of the CMOS depth image sensor with OPA. Disparity is affected by pixel height. Therefore, this paper compared two CMOS depth image sensors with OPA using front-side illumination (FSI) and back-side illumination (BSI) structures. As FSI and BSI chips are fabricated via different processes, two similar chips were used for measurement by calculating the ratio of the OPA offset to pixel size. Both chips were evaluated for chief ray angle (CRA) and disparity in the same measurement environment. Experimental results were then compared and analyzed for the two CMOS depth image sensors with OPA.


Crystals ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 717
Author(s):  
Hassan Algadi ◽  
Ahmad Umar ◽  
Hasan Albargi ◽  
Turki Alsuwian ◽  
Sotirios Baskoutas

A low-cost and simple drop-casting method was used to fabricate a carbon nanodot (C-dot)/all-inorganic perovskite (CsPbBr3) nanosheet bilayer heterojunction photodetector on a SiO2/Si substrate. The C-dot/perovskite bilayer heterojunction photodetector shows a high performance with a responsivity (R) of 1.09 A/W, almost five times higher than that of a CsPbBr3-based photodetector (0.21 A/W). In addition, the hybrid photodetector exhibits a fast response speed of 1.318/1.342 µs and a highly stable photocurrent of 6.97 µA at 10 V bias voltage. These figures of merits are comparable with, or much better than, most reported perovskite heterojunction photodetectors. UV–Vis absorption and photoluminescent spectra measurements reveal that the C-dot/perovskite bilayer heterojunction has a band gap similar to the pure perovskite layer, confirming that the absorption and emission in the bilayer heterojunction is dominated by the top layer of the perovskite. Moreover, the emission intensity of the C-dot/perovskite bilayer heterojunction is less than that of the pure perovskite layer, indicating that a significant number of charges were extracted by the C-dot layer. The studied band alignment of the C-dots and perovskites in the dark and under emission reveals that the photodetector has a highly efficient charge separation mechanism at the C-dot/perovskite interface, where the recombination rate between photogenerated electrons and holes is significantly reduced. This highly efficient charge separation mechanism is the main reason behind the enhanced performance of the C-dot/perovskite bilayer heterojunction photodetector.


RSC Advances ◽  
2018 ◽  
Vol 8 (34) ◽  
pp. 18889-18895 ◽  
Author(s):  
Biao Wang ◽  
Xukai Luo ◽  
Junli Chang ◽  
Xiaorui Chen ◽  
Hongkuan Yuan ◽  
...  

In this work, we employ hybrid density functional theory to investigate HfS2-based van der Waals (vdW) heterojunctions for highly efficient photovoltaic and photocatalytic applications.


2016 ◽  
Vol 7 (9) ◽  
pp. 6076-6082 ◽  
Author(s):  
Ailong Li ◽  
Zhiliang Wang ◽  
Heng Yin ◽  
Shengyang Wang ◽  
Pengli Yan ◽  
...  

The key to phase junctions for efficient charge separation is to consider both the phase alignment and interface structure.


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