scholarly journals Anomaly Negative Resistance Phenomena in Highly Epitaxial PrBa0.7Ca0.3Co2O5+δ Thin Films Induced from Superfast Redox Reactions

Catalysts ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1441
Author(s):  
Yumei Luo ◽  
Xing Xu ◽  
Yudong Xia ◽  
Shengli Pang ◽  
Fen Xu ◽  
...  

Thin films of Ca-doped double perovskite, PrBa0.7Ca0.3Co2O5+δ (PBCC), were epitaxially grown on (001) SrTiO3, and their redox reactions under a switching flow of H2 and O2 gases were examined at various temperatures by measuring the resistance R(t) of the films as a function of the gas flow time t. In the temperature range between 350 and 725 °C, these thin films are reduced and oxidized in an ultrafast manner under the flow of H2 and O2 gases, respectively, suggesting that PBCC thin films are promising candidates for developing ultra-sensitive oxygen sensors or SOFC cathodes at intermediate or high temperatures. When the gas flow is switched to O2, the reduced PBCC thin films exhibit a negative resistance at temperatures above 600 °C but a positive resistance at temperatures below 600 °C. The probable cause for these anomalous transport properties is the diffusion of the H atoms from the cathode to the anode in the PBCC film, which provides a current opposite to that resulting from the external voltage.

2018 ◽  
Vol 2 (11) ◽  
Author(s):  
W. C. Yang ◽  
Y. T. Xie ◽  
X. Sun ◽  
X. H. Zhang ◽  
K. Park ◽  
...  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aziz Ahmed ◽  
Seungwoo Han

AbstractN-type bismuth telluride (Bi2Te3) thin films were prepared on an aluminum nitride (AlN)-coated stainless steel foil substrate to obtain optimal thermoelectric performance. The thermal co-evaporation method was adopted so that we could vary the thin film composition, enabling us to investigate the relationship between the film composition, microstructure, crystal preferred orientation and thermoelectric properties. The influence of the substrate temperature was also investigated by synthesizing two sets of thin film samples; in one set the substrate was kept at room temperature (RT) while in the other set the substrate was maintained at a high temperature, of 300 °C, during deposition. The samples deposited at RT were amorphous in the as-deposited state and therefore were annealed at 280 °C to promote crystallization and phase development. The electrical resistivity and Seebeck coefficient were measured and the results were interpreted. Both the transport properties and crystal structure were observed to be strongly affected by non-stoichiometry and the choice of substrate temperature. We observed columnar microstructures with hexagonal grains and a multi-oriented crystal structure for the thin films deposited at high substrate temperatures, whereas highly (00 l) textured thin films with columns consisting of in-plane layers were fabricated from the stoichiometric annealed thin film samples originally synthesized at RT. Special emphasis was placed on examining the nature of tellurium (Te) atom based structural defects and their influence on thin film properties. We report maximum power factor (PF) of 1.35 mW/m K2 for near-stoichiometric film deposited at high substrate temperature, which was the highest among all studied cases.


2021 ◽  
Author(s):  
Ghada El Jamal ◽  
Thomas Gouder ◽  
Rachel Eloirdi ◽  
Evgenia Tereshina-Chitrova ◽  
Lukáš Horák ◽  
...  

X-Ray Photoelectron Spectroscopy (XPS) has been used to study the effect of mixed H2O/H2 gas plasma on the surface of UO2, U2O5 and UO3 thin films at 400 °C. The...


2005 ◽  
Vol 97 (10) ◽  
pp. 10D319 ◽  
Author(s):  
Zhenjun Wang ◽  
Jinke Tang ◽  
Leonard Spinu

2017 ◽  
Vol 50 (27) ◽  
pp. 275004 ◽  
Author(s):  
A E Stanciu ◽  
A Kuncser ◽  
G Schinteie ◽  
P Palade ◽  
A Leca ◽  
...  

Author(s):  
S. Budak ◽  
C. Muntele ◽  
I. Muntele ◽  
H. Guo ◽  
A. Gupta ◽  
...  
Keyword(s):  

1994 ◽  
Vol 235-240 ◽  
pp. 597-598 ◽  
Author(s):  
J. Azoulay ◽  
A. Verdyan ◽  
I. Lapsker

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