Fabrication of Cu-rich CZTS thin films by two-stage process: Effect of gas flow-rate in sulfurization process

2021 ◽  
Vol 1230 ◽  
pp. 129922
Author(s):  
M.A. Olgar ◽  
A. Altuntepe ◽  
S. Erkan ◽  
R. Zan
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Gas Flow ◽  
Gas Flow Rate ◽  
Two Stage ◽  
Sulfurization Process ◽  
Stage Process ◽  
Czts Thin Films

A Study on the Effect of Process Parameters on Surface Topography of Al Thin Films on Various Substrates Using AFM

2011 ◽  
Vol 383-390 ◽  
pp. 903-908
Author(s):  
S. Shanmugan ◽  
D. Mutharasu ◽  
Z. Hassan ◽  
H. Abu. Hassan
Keyword(s):  
Thin Films ◽  
Surface Topography ◽  
Flow Rate ◽  
Gas Flow ◽  
Process Conditions ◽  
Gas Flow Rate ◽  
Glass Substrates ◽  
Sputtering Power ◽  
Large Particles ◽  
Ar Gas

Al thin films were prepared over different substrates at various process conditions using DC sputtering. The surface topography of all prepared films was examined using AFM technique. Very smooth, uniform and dense surface were observed for Al films coated over Glass substrates. The observed particle size was nano scale (20 -70 nm) for Glass substrates. Sputtering power showed immense effect on surface roughness with respective to Ar gas flow rate. Noticeable change on surface with large particles was observed in Copper substrates at various sputtering power and gas flow rate.

scholarly journals Structural and X-Ray Photoelectron Spectroscopy Study of Al-Doped Zinc-Oxide Thin Films

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Bong Ju Lee ◽  
Ho Jun Song ◽  
Jin Jeong
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Flow Rate ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Photoelectron Spectra ◽  
Gas Flow Rate ◽  
X Ray ◽  
Oxide Component

Al-doped zinc-oxide (AZO) thin films were prepared by RF magnetron sputtering at different oxygen partial pressures and substrate temperatures. The charge-carrier concentrations in the films decreased from 1.69 × 1021to 6.16 × 1017 cm−3with increased gas flow rate from 7 to 21 sccm. The X-ray diffraction (XRD) patterns show that the (002)/(103) peak-intensity ratio decreased as the gas flow rate increased, which was related to the increase of AZO thin film disorder. X-ray photoelectron spectra (XPS) of the O1s were decomposed into metal oxide component (peak A) and the adsorbed molecular oxygen on thin films (peak B). The area ratio of XPS peaks (A/B) was clearly related to the stoichiometry of AZO films; that is, the higher value of A/B showed the higher stoichiometric properties.

scholarly journals ZnO:Al Thin Films with Buffer Layers Fabricated via Nitrogen Mediated Crystallization: Effects of N2/Ar Gas Flow Rate Ratio

2012 ◽  
Vol 37 (2) ◽  
pp. 165-168 ◽  
Author(s):  
Iping Suhariadi ◽  
Naho Itagaki ◽  
Kazunari Kuwahara ◽  
Koichi Oshikawa ◽  
Daisuke Yamashita ◽  
...  
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Rate Ratio ◽  
Gas Flow ◽  
Buffer Layers ◽  
Flow Rate Ratio ◽  
Gas Flow Rate ◽  
Ar Gas

scholarly journals A Study on the Electrical Properties of ITO Thin Films with Various Oxygen Gas Flow Rate

2007 ◽  
Vol 40 (3) ◽  
pp. 144-148 ◽  
Author(s):  
Dong-H. Choi ◽  
Min-J. Keum ◽  
A.R. Jean ◽  
Jean-G. Han
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Flow Rate ◽  
Gas Flow ◽  
Gas Flow Rate ◽  
Ito Thin Films ◽  
Oxygen Gas

Effects of oxygen-gas flow rate on lattice dynamics and microstructure for Ga-doped ZnO thin films prepared by reactive plasma deposition

2005 ◽  
Vol 38 (4-6) ◽  
pp. 369-376 ◽  
Author(s):  
T. Yamamoto ◽  
T. Mitsunaga ◽  
M. Osada ◽  
K. Ikeda ◽  
S. Kishimoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Lattice Dynamics ◽  
Gas Flow ◽  
Plasma Deposition ◽  
Zno Thin Films ◽  
Gas Flow Rate ◽  
Reactive Plasma ◽  
Oxygen Gas ◽  
Doped Zno

scholarly journals Effects of gas flow rate on the structure and elemental composition of tin oxide thin films deposited by RF sputtering

AIP Advances ◽  
2017 ◽  
Vol 7 (12) ◽  
pp. 125105 ◽  
Author(s):  
Muntaser Al-Mansoori ◽  
Sahar Al-Shaibani ◽  
Ahlam Al-Jaeedi ◽  
Jisung Lee ◽  
Daniel Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Elemental Composition ◽  
Flow Rate ◽  
Tin Oxide ◽  
Gas Flow ◽  
Rf Sputtering ◽  
Gas Flow Rate ◽  
Oxide Thin Films

INFLUENCE OF PROCESS PARAMETERS ON OPTICAL AND PHYSICAL PROPERTIES OF ITO THIN FILM

2019 ◽  
Vol 27 (07) ◽  
pp. 1950183
Author(s):  
AREZOO MOSHABAKI ◽  
ERFAN KADIVAR ◽  
ALIREZA FIROOZIFAR
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Deposition Rate ◽  
Flow Rate ◽  
Gas Flow ◽  
Gas Flow Rate ◽  
Gas Flux ◽  
Argon Gas ◽  
Ito Thin Films ◽  
Oxygen Gas

Indium tin oxide (ITO) thin films have been deposited on glass substrate by DC magnetron sputtering in the presence and absence of oxygen gas flux. Subsequently, some of the samples have been annealed in vacuum or air oven at [Formula: see text]C for 20[Formula: see text]min. The optical, surface morphology and electrical characteristics have been examined by spectrophotometry, atomic force microscope, field emission scanning electron microscopy, four-point probe and Hall effect measurements as a function of argon gas flux, film thickness, deposition rate and substrate temperature. Experimental results indicate that the surface roughness increases by decreasing the argon gas flow rate and deposition rate. The result revealed that the lowest surface roughness of 1.07[Formula: see text]nm is achieved at zero oxygen gas flux, argon gas flow 20[Formula: see text]sccm and deposition rate [Formula: see text] Å/s. We have found that the maximum value of merit figure is related to the argon gas flow rate 30[Formula: see text]sccm. In order to obtain a very smooth surface, finally, the ITO thin films have been processed with alumina polishing solution by ultrasonic method. Our experimental results indicate that surface roughness decreases and merit figure increases after polishing process.

Influence of Ar gas flow rate in organosilicon plasma for the fabrication of SiO:CH thin films by PECVD method

2008 ◽  
Vol 202 (22-23) ◽  
pp. 5259-5261 ◽  
Author(s):  
Yongsup Yun ◽  
Takanori Yoshida ◽  
Norifumi Shimazu ◽  
Naoki Nanba ◽  
Yasushi Inoue ◽  
...  
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Gas Flow ◽  
Gas Flow Rate ◽  
Ar Gas
Sign in / Sign up

Export Citation Format

Share Document