scholarly journals Structure and Photocatalytic Activity of Copper and Carbon-Doped Metallic Zn Phase-Rich ZnO Oxide Films

Catalysts ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 60
Author(s):  
Simona Tuckute ◽  
Sarunas Varnagiris ◽  
Marius Urbonavicius ◽  
Emilija Demikyte ◽  
Kristina Bockute ◽  
...  

ZnO is one of the most important industrial metal oxide semiconductors. However, in order to fully realise its potential, the electronic structure of ZnO has to be modified to better fit the needs of specific fields. Recent studies demonstrated that reactive magnetron sputtering under Zn-rich conditions promotes the formation of intrinsic ZnO defects and allows the deposition of metallic Zn phase-rich ZnO films. In photocatalytic efficiency tests these films were superior to traditional ZnO oxide, therefore, the purposeful formation of intrinsic ZnO defects, namely Zn interstitials and oxygen vacancies, can be considered as advantageous self-doping. Considering that such self-doped ZnO remains a semiconductor, the natural question is if it is possible to further improve its properties by adding extrinsic dopants. Accordingly, in the current study, the metallic Zn phase-rich ZnO oxide film formation process (reactive magnetron sputtering) was supplemented by simultaneous sputtering of copper or carbon. Effects of the selected dopants on the structure of self-doped ZnO were investigated by X-ray diffractometer, scanning electron microscope, X-ray photoelectron spectroscope and photoluminescence techniques. Meanwhile, its effect on photocatalytic activity was estimated by visible light activated bleaching of Methylene Blue. It was observed that both dopants modify the microstructure of the films, but only carbon has a positive effect on photocatalytic efficiency.

2010 ◽  
Vol 100 (1) ◽  
pp. 79-82 ◽  
Author(s):  
Jing Qi ◽  
Daqiang Gao ◽  
Jinhong Liu ◽  
Wenge Yang ◽  
Qi Wang ◽  
...  

2005 ◽  
Vol 59 (21) ◽  
pp. 2611-2614 ◽  
Author(s):  
Z.B. Fang ◽  
Y.S. Tan ◽  
H.X. Gong ◽  
C.M. Zhen ◽  
Z.W. He ◽  
...  

2008 ◽  
Vol 23 (S1) ◽  
pp. S94-S97 ◽  
Author(s):  
G. Juárez-Díaz ◽  
H. Solache-Carranco ◽  
G. Romero-Paredes R. ◽  
R. Peña-Sierra ◽  
J. Martínez-Juárez ◽  
...  

Thin polycrystalline ZnO films were grown on silicon substrates by dc reactive magnetron sputtering using zinc oxide targets. The quality of the ZnO layers was assessed by X-ray diffraction (XRD), atomic force microscopy, Raman scattering, and photoluminescence measurements. The XRD studies and Raman studies revealed that the ZnO films crystallize in the wurtzite structure. Room temperature photoluminescence spectra consisted of a narrow near-band-edge ultraviolet band and a broad defect-related green band with peak positions at 380 and 516 nm, respectively. The main goal of the work was to define the growth conditions to prepare zinc oxide films with adequate properties to be used in electroluminescent devices. The films exhibited the best surface appearance with a 40:1 argon/oxygen flow rate, a total pressure of 1.5×10−3 mbar, and a substrate temperature of 230 °C. The structural and luminescence properties improved noticeably with the thermal annealing processes at 800 °C for 1 h.


2002 ◽  
Vol 41 (Part 1, No. 2A) ◽  
pp. 814-819 ◽  
Author(s):  
Masato Kon ◽  
Pung Keun Song ◽  
Yuzo Shigesato ◽  
Peter Frach ◽  
Akio Mizukami ◽  
...  

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