scholarly journals Fabrication of a 3.5-GHz Solidly Mounted Resonator by Using an AlScN Piezoelectric Thin Film

Coatings ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1151
Author(s):  
Chan-Yu Chung ◽  
Ying-Chung Chen ◽  
Yu-Cheng Chen ◽  
Kuo-Sheng Kao ◽  
Yu-Chen Chang
Keyword(s):  
Thin Film ◽  
Resonance Frequency ◽  
Coupling Coefficient ◽  
Electromechanical Coupling ◽  
Bragg Reflector ◽  
Electromechanical Coupling Coefficient ◽  
Axis Orientation ◽  
X Ray ◽  
Aln Film ◽  
Piezoelectric Thin Film

In this study, a 3.5-GHz solidly mounted resonator (SMR) was developed by doping scandium in aluminum nitride to form AlScN as the piezoelectric thin film. Molybdenum (Mo) of 449 nm thickness and silicon dioxide (SiO2) of 371 nm thickness were used as the high and low acoustic impedance films, respectively, which were alternately stacked on a silicon substrate to form a Bragg reflector. Then, an alloy target with atomic ratio of 15% Sc was adopted to deposit the piezoelectric AlScN thin film on the Bragg reflector, using a radio frequency magnetron sputtering system. The characteristics of the c-axis orientation of the AlScN thin films were optimized by adjusting sputtering parameters as sputtering power of 250 W, sputtering pressure of 20 mTorr, nitrogen gas ratio of 20%, and substrate temperature of 300 °C. Finally, a metal top electrode was coated to form a resonator. The X-ray diffraction (XRD) analysis showed that the diffraction peak angles of the AlScN film shifted towards lower angles in each crystal phase, compared to those of AlN film. The energy dispersive X-ray spectrometer (EDX) analysis showed that the percentage of scandium atom in the film is about 4.5%, regardless of the sputtering conditions. The fabricated resonator exhibited a resonance frequency of 3.46 GHz, which was a small deviation from the preset resonance frequency of 3.5 GHz. The insertion loss of −10.92 dB and the electromechanical coupling coefficient of 2.24% were obtained. As compared to the AlN-based device, the AlScN-based resonator exhibited an improved electromechanical coupling coefficient by about two times.

Characteristics Analysis of Saw Filter Using Al0.36Ga0.64N Thin Film

2002 ◽  
Vol 720 ◽  
Author(s):  
Sun-Ki Kim ◽  
Min-Jung Park ◽  
Cheol-Yeong Jang ◽  
Hyun-Chul Choi ◽  
Jung-Hee Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Insertion Loss ◽  
Coupling Coefficient ◽  
Electromechanical Coupling ◽  
Side Lobe ◽  
Electromechanical Coupling Coefficient ◽  
Device Performance ◽  
Saw Devices ◽  
Characteristics Analysis ◽  
Temperature Coefficient Of Frequency

AbstractAlxGa1-xN sample with x=0.36 was epitaxially grown on sapphire by MOCVD. SAW velocity of 5420 m/s and TCF (temperature coefficient of frequency) of -51.20 ppm/°C were measured from the SAW devices fabricated on the AlxGa1-xN sample, when kh value was 0.078, at temperatures between –30 °C and 60 °C Electromechanical coupling coefficient was ranged from 1.26 % to 2.22 %. The fabricated SAW filter have shown a good device performance with insertion loss of -33.853 dB and side lobe attenuation of 20 dB.

Switch Triggers for Optimal Vibration Reduction via Resonance Frequency Detuning

2014 ◽  
Author(s):  
Garrett K. Lopp ◽  
Jeffrey L. Kauffman
Keyword(s):  
Resonance Frequency ◽  
Coupling Coefficient ◽  
Electromechanical Coupling ◽  
Damping Ratio ◽  
Vibration Reduction ◽  
Electromechanical Coupling Coefficient ◽  
Peak Strain ◽  
Frequency Detuning ◽  
Optimal Frequency ◽  
Response Dynamics

For systems subjected to linear frequency sweep excitation, piezoelectric-based resonance frequency detuning provides vibration reduction by altering the stiffness state of the material as it passes through resonance. This vibration reduction technique applies to turbomachinery experiencing changes in rotation speed, for example on spool-up and spool-down. The peak response dynamics are determined by the system’s sweep rate, modal damping ratio, electromechanical coupling coefficient, and, most importantly, the frequency at which the stiffness state is altered. An analytical approach is employed to solve the nondimensional single degree of freedom equation of motion and is scaled to incorporate the altered system frequency following the stiffness state switch. This paper provides an extensive study over a range of sweep rates, damping ratios, and electromechanical coupling coefficients to determine the optimal frequency switch trigger that minimizes the response envelope. This switch trigger is primarily a function of the electromechanical coupling coefficient and the phase of vibration at which the switch occurs. As the coupling coefficient increases, the switch trigger decreases and is approximately linear with the square of this coupling coefficient. Furthermore, as with other state-switching techniques, the optimal frequency switch occurs when the phase of vibration is at the point of maximum displacement, or peak strain energy.

SURFACE-ACOUSTIC-WAVE FIELD AND ACOUSTO-OPTIC INTERACTION IN AlN/128-DEG-ROTATED Y-CUT X-PROPAGATION LiNbO3

2013 ◽  
Vol 27 (05) ◽  
pp. 1350032
Author(s):  
JUNTAO WANG ◽  
QUN HAN ◽  
JIPING NING ◽  
YANG HE
Keyword(s):  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Diffraction Efficiency ◽  
Coupling Coefficient ◽  
Electromechanical Coupling ◽  
Guided Wave ◽  
Electromechanical Coupling Coefficient ◽  
Overlap Integral ◽  
Aln Film ◽  
First Time

The efficiency of guided-wave acousto-optic (AO) interaction in AlN /128-deg-rotated Y-cut X-propagation lithium niobate (128-deg YX- LiNbO 3) structure is analyzed theoretically for the first time by determining the overlap integral between the optical and the surface acoustic wave (SAW) field distribution. The results show that the use of an AlN film can increase the phase velocity of SAW, the electromechanical coupling coefficient and the diffraction efficiency of AO interaction. A maximum of 9.33% for the electromechanical coupling coefficient is obtained when the normalized thickness of AlN film equals 0.09. The diffraction efficiency has a significant improvement when the normalized thickness of AlN film is increased from 0 to 0.05. And, the improvement for the TM polarization is more evident than that for the TE polarization. However, for a well-concentrated optical waveguide, the use of an AlN film reduces the diffraction efficiency of the TM polarization when the SAW frequency is low.

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