scholarly journals Self-Assembled Monolayers on Highly Porous Low-k Dielectrics by 3-Aminopropyltrimethoxysilane Treatment

Coatings ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 246
Author(s):  
Cheng ◽  
Haung ◽  
Lee ◽  
Chen ◽  
Fang
Keyword(s):  
Dielectric Constant ◽  
Dielectric Film ◽  
Dielectric Films ◽  
Breakdown Field ◽  
Self Assembled Monolayers ◽  
K Value ◽  
Assembled Monolayers ◽  
Self Assembled ◽  
Low K ◽  
Highly Porous

Highly porous low-dielectric-constant (low-k) dielectric materials with a dielectric constant (k) less than 2.50 are needed for 32 nm and beyond technological nodes. In this study, a highly porous low-k dielectric film with a k value of 2.25, open porosity of 32.0%, and pore diameter of 1.15 nm were treated by 3-Aminopropyltrimethoxysilane (APTMS) in wet solution in order to form self-assembled monolayers (SAMs) onto it. The effects of the formation SAMs on the electrical characteristics and reliability of highly porous low-k dielectric films were characterized. As SAMs were formed onto the highly porous low-k dielectric film by APTMS treatment, the dielectric breakdown field and the failure time were significantly improved, but at the expense of the increases in the dielectric constant and leakage current. Moreover, the formation SAMs enhanced the Cu barrier performance for highly porous low-k dielectric films. Therefore, the SAMs derived from APTMS treatment are promising for highly porous low-k dielectric films to ensure better integrity.

The Effect of Ar/H2 Plasma Pretreatments on Porous K=2.0 Dielectrics for Pore Sealing by Self-Assembled Monolayers Deposition

2012 ◽  
Vol 195 ◽  
pp. 146-149 ◽  
Author(s):  
Y. Sun ◽  
J. Swerts ◽  
P. Verdonck ◽  
A. Maheshwari ◽  
J.L. Prado ◽  
...  
Keyword(s):  
Plasma Temperature ◽  
Self Assembled Monolayers ◽  
Hydroxyl Groups ◽  
K Value ◽  
Oh Groups ◽  
Surface Hydroxyl ◽  
Pore Sealing ◽  
Assembled Monolayers ◽  
Self Assembled ◽  
Low K

Self-assembled monolayers (SAMs) deposition is being recently explored to help sealing the pores of a k=2.0 material. In order to enable a covalent chemical low-k surface functionalization by SAMs, a hydroxyl groups density as high as 1 to 2.5 OH groups/nm2 is required. This surface modification must be carefully controlled to confine the k below 10%. In this paper, the effects of plasma temperature, time and power on the SAMs deposition and plasma-induced damage are investigated. The main findings are that there is always a trade-off between surface hydroxyl groups density and bulk damage. A thick modified layer allows the SAM molecules to penetrate inside the pores which results in a decreased porosity and an increased k value with respect to correspondent plasma-treated pristine substrates.

Surface sealing using self-assembled monolayers and its effect on metal diffusion in porous low- k dielectrics studied using monoenergetic positron beams

2016 ◽  
Vol 368 ◽  
pp. 272-276 ◽  
Author(s):  
Akira Uedono ◽  
Silvia Armini ◽  
Yu Zhang ◽  
Takeaki Kakizaki ◽  
Reinhard Krause-Rehberg ◽  
...  
Keyword(s):  
Self Assembled Monolayers ◽  
Metal Diffusion ◽  
Surface Sealing ◽  
Assembled Monolayers ◽  
Self Assembled ◽  
Positron Beams ◽  
Low K

The Dielectric Constant of Self-Assembled Monolayers

2008 ◽  
Vol 18 (24) ◽  
pp. 3999-4006 ◽  
Author(s):  
Lorenz Romaner ◽  
Georg Heimel ◽  
Claudia Ambrosch-Draxl ◽  
Egbert Zojer
Keyword(s):  
Dielectric Constant ◽  
Self Assembled Monolayers ◽  
Assembled Monolayers ◽  
Self Assembled

On Preparation of SrTiO3 Thin Films with Self-Assembled Monolayers by Liquid Phase Deposition and its Dielectric Properties

2012 ◽  
Vol 512-515 ◽  
pp. 1165-1170
Author(s):  
Wei Guang Han ◽  
Guo Qiang Tan ◽  
Ao Xia ◽  
Hui Jun Ren
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Liquid Phase ◽  
Dielectric Loss ◽  
Precursor Solution ◽  
Self Assembled Monolayers ◽  
Liquid Phase Deposition ◽  
Assembled Monolayers ◽  
Self Assembled

In this paper, titanium ammonium fluoride ((NH4)TiF6), strontium nitrate (Sr(NO3)2) and boric acid (H3BO3) were used as raw materials, the precursor solution was prepared with molar ratio of AHFT/SN/BA=1/1/3. SrTiO3 dielectric thin films were deposited with the self-assembled monolayers (SAMs) by the liquid-phase deposition on FTO substrate. X-ray diffraction (XRD), scanning election microscopy (SEM) and Agilent E4980A precision LCR Meter were used to characterize the SrTiO3 films. The precursor solution concentration and the pH values of precursor solution had the effects on the dielectric properties of the as-prepared thin films. When the precursor concentration was 0.0125mol/L, the crystallization of as-prepared SrTiO3 thin films was high and the grain sizes on the film surface were even and dense. When the frequency was 15~100KHz, the optimal dielectric constant was up to 1060, the minimal dielectric loss was 4.053. As pH=3.30, the frequency of the as-prepared SrTiO3 thin films was 15~100KHz. The optimal dielectric constant was up to 1060, too. The minimal dielectric loss was 1.914. The optimal dielectric constants were 346.3 and 424.1 when the pH was 3.1 and below 3.5 respectively. The minimal dielectric losses were respectively 18.10 and 54.82.

Characterization of Self Assembled Monolayers for Ultra Low-k Films

2005 ◽  
Author(s):  
B. Ramana Murthy ◽  
Wan Mun Yee ◽  
Ahila Krishnamoorthy ◽  
V. Anand ◽  
K.Y. Yong ◽  
...  
Keyword(s):  
Self Assembled Monolayers ◽  
Assembled Monolayers ◽  
Self Assembled ◽  
Low K

scholarly journals Correction: The Dielectric Constant of Self-Assembled Monolayers

2011 ◽  
Vol 21 (18) ◽  
pp. 3406-3406 ◽  
Author(s):  
Lorenz Romaner ◽  
Georg Heimel ◽  
Claudia Ambrosch-Draxl ◽  
Egbert Zojer
Keyword(s):  
Dielectric Constant ◽  
Self Assembled Monolayers ◽  
Assembled Monolayers ◽  
Self Assembled

Light scattering of thin dielectric films: self-assembled monolayers on the surface of polycrystalline gold

1999 ◽  
Author(s):  
Sergei I. Lysenko ◽  
Boris A. Snopok ◽  
Ekaterina V. Kostyukevich ◽  
Stepan A. Zinio ◽  
Valeri A. Sterligov ◽  
...  
Keyword(s):  
Light Scattering ◽  
Dielectric Films ◽  
Self Assembled Monolayers ◽  
Assembled Monolayers ◽  
Polycrystalline Gold ◽  
Self Assembled ◽  
Thin Dielectric Films

Electrochemical behavior of self-assembled monolayers based on functionalized oligothiophenes

1998 ◽  
Vol 95 (6) ◽  
pp. 1339-1342 ◽  
Author(s):  
R. Michalitsch ◽  
A. El Kassmi ◽  
P. Lang ◽  
A. Yassar ◽  
F. Garnier
Keyword(s):  
Electrochemical Behavior ◽  
Self Assembled Monolayers ◽  
Assembled Monolayers ◽  
Self Assembled

Imaging of patterned self-assembled monolayers by scanning photoelectron microscopy

2003 ◽  
Vol 104 ◽  
pp. 459-462 ◽  
Author(s):  
R. Klauser ◽  
M. Zharnikov ◽  
I.-H. Hong ◽  
S.-C. Wang ◽  
A. Gölzhäuser ◽  
...  
Keyword(s):  
Self Assembled Monolayers ◽  
Assembled Monolayers ◽  
Scanning Photoelectron Microscopy ◽  
Self Assembled

Finite-Element Modeling and Quantitative Measurement Using Scanning Microwave Microscopy to Characterize Dielectric Films

2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang
Keyword(s):  
Thin Films ◽  
Dielectric Film ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Fem Modeling ◽  
Dielectric Thin Films ◽  
Microwave Microscopy ◽  
Scanning Microwave Microscopy ◽  
Low K

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.

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