scholarly journals Growth and Characterization of (Tb,Yb) Co-Doping Sprayed ZnO Thin Films

Crystals ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 169 ◽  
Author(s):  
A. El hat ◽  
I. Chaki ◽  
R. Essajai ◽  
A. Mzerd ◽  
G. Schmerber ◽  
...  
Keyword(s):  
Thin Films ◽  
Secondary Phase ◽  
Hexagonal Wurtzite Structure ◽  
Zno Thin Films ◽  
Spray Pyrolysis Method ◽  
Efficient Energy Transfer ◽  
Force Microscopy ◽  
Co Doping ◽  
Glass Substrates ◽  
Hall Effect Measurements

Structural, optical and electrical properties of (ytterbium/terbium) co-doped ZnO thin films deposited on glass substrates using the spray pyrolysis method were investigated. The films exhibited the hexagonal wurtzite structure with a preferential orientation along (002) direction. No secondary phase was observed in the X-ray diffraction detection limit. Atomic force microscopy (AFM) was performed and root means square roughness (RMS) of our samples decreased with terbium content. Photoluminescence measurements showed a luminescence band at 980 nm which is characteristic of Yb3+ transition between the electronic levels 2F5/2 to 2F7/2. This is experimental evidence for an efficient energy transfer from the ZnO matrix to Yb. Hall Effect measurements gave a low electrical resistivity value around 6.0 × 10−3 Ω.cm. Such characteristics make these films of interest to photovoltaic devices.

Effect of RF Power on the Structural Properties of Magnetron Sputtered ZnO Thin Films Deposited at Room Temperature

2012 ◽  
Vol 626 ◽  
pp. 163-167
Author(s):  
Samsiah Ahmad ◽  
Nor Diyana Md Sin ◽  
M.N. Berhan ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Room Temperature ◽  
Hexagonal Wurtzite Structure ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Rf Power ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Sputtering Power

Zinc oxide thin films were prepared at room temperature in pure argon ambient on glass substrates by RF magnetron sputtering. The effect of sputtering power (50~250 Watt) on the structural properties of the film were investigated. The thickness of ZnO thin films was measured using surface profiler (Dektak 150+). Atomic force microscopy machine (AFM-Park system XE-100) was used to characterize the morphology while the crystalinity have been characterized using XRD (Rigaku Ultima IV). It was found that the thickness, growth rate and RMS roughness increases with increasing RF power. All films exhibit the (002) plane which correspond to hexagonal wurtzite structure with the highest peak at 150 Watt.

scholarly journals Structural, Optical and Electrical Properties of Cu doped ZnO Thin Films Grown by RF Magnetron Sputtering: Application to Solar Photocatalysis

2021 ◽  
Author(s):  
Bilel Khalfallah ◽  
I. Riahi ◽  
F. Chaabouni
Keyword(s):  
Thin Films ◽  
Substrate Surface ◽  
Hexagonal Wurtzite Structure ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Bandgap Energy ◽  
Glass Substrates ◽  
Zno Powders ◽  
Doped Zno ◽  
Spectroscopy Studies

Abstract RF sputtered undoped and Cu doped ZnO (CZO) thin films were deposited on unheated glass substrates using a mixed Cu2O and ZnO powders target at different Cu concentrations of 0, 1, 2, 3 and 4 wt.%. The effects of copper concentration on the structural, electrical, optical and photocatalytic properties of CZO films have been studied. From XRD and Raman spectroscopy studies, it was found that the deposited films were polycrystalline with a predominant hexagonal wurtzite structure along the c-axis perpendicular to the substrate surface. The presence of multiple interference fringes in the transmittance and reflectance spectra shows the good homogeneity of the films. All the films are highly transparent with transparency reaching 80% indicating the possibility to use these films as an optical window. The absorption tail gradually shifted towards a higher wavelength side, which resulted in the decrease of bandgap energy from 3.35 to 3.26 eV. All the sputtered films are highly conductive with a conductivity reaching 104 S.cm− 1.The effect of Cu-doping on the photocatalytic activity of ZnO thin films for the degradation of methylene blue (MB) dye was studied under sunlight irradiation and the results showed that the Cudoping provokes appreciable degradation of MB and reached a maximum for the 1 wt.% Cu doped ZnO film.

Ni-Doped ZnO Thin Films: Deposition, Characterization and Photocatalytic Applications

2021 ◽  
Vol 21 (3) ◽  
pp. 1560-1569
Author(s):  
K. Moorthy ◽  
S. S. R. Inbanathan ◽  
C. Gopinathan ◽  
N. P. Lalla ◽  
Abdulaziz Ali Alghamdi ◽  
...  
Keyword(s):  
Thin Films ◽  
Uv Light ◽  
Characteristic Root ◽  
Film Surface ◽  
Hexagonal Wurtzite Structure ◽  
Zno Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Doped Zno

Root like structured Ni-doped zinc oxide [Zn(1-x)NixO (x = 0.09)] thin films were deposited on a non-conducting glass substrate by indigenously developed spray pyrolysis system at optimized substrate hotness of 573±5 K. Thus obtained Ni-doped ZnO thin films were characterized by UV-visible spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), Atomic Force Microscopy (AFM). XRD result revealed that Ni-doped ZnO has a polycrystalline nature with a hexagonal wurtzite structure. For pure ZnO and Ni-doped ZnO thin films, the particle sizes were 60.9 and 53.3 nm while lattice strain values were 1.56×10−3 and 1.14×10−3, respectively. The film surface showed characteristic root-like structure as observed by the SEM. It was observed that the Ni-doped ZnO thin films were grown in high density along with more extent of branching as compared to pure ZnO thin films but retained the root-like morphologies, however, the branches were more-thinner and of shorter lengths. AFM analysis showed that the surface grains of the Ni-doped samples are homogeneous with less RMS roughness values compared with the undoped ZnO samples. The photocatalytic activity of the prepared thin films was evaluated by the degradation of methyl orange (MO) dye under UV light irradiation. Pure ZnO and Ni-doped ZnO thin films took 150 min and 100 min to degrade about 60% MO dye, respectively.

Study of Mn doping on the Structural, Optoelectronic and Photoluminescence Properties of F-Doped SnO2 Sprayed Thin Films for Optoelectronic Applications

2020 ◽  
Vol 65 ◽  
pp. 13-26
Author(s):  
Naoual Houaidji ◽  
Mejda Ajili ◽  
Baghdadi Chouial ◽  
Najoua Turki Kamoun ◽  
Kenza Kamli ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Concentration ◽  
Ohmic Contacts ◽  
Chemical Spray Pyrolysis ◽  
Electrical Mobility ◽  
Photoluminescence Properties ◽  
Co Doping ◽  
Glass Substrates ◽  
Hall Effect Measurements ◽  
Co Doped

The aim of this work is the production and the characterisation of (SnO2: (Mn, F)) thin films with appropriate optoelectronic properties required for application as ohmic contacts in photovoltaic application devices. Transparent conducting Manganese-fluorine co-doped tin oxide (SnO2: (Mn, F)) thin films have been deposited onto preheated glass substrates using the chemical spray pyrolysis (CSP) method. The ([Mn2+]/[Sn4+]) atomic concentration ratio (y) in the spray solution is varied between 0 and 8 at. %. The structural, the opto-electrical and the photoluminescence properties of these thin films have been studied. It is found that the deposited thin films are polycrystalline with a tetragonal crystal structure corresponding to SnO2 phase having a preferred orientation along the (200) plane. Transmission and reflection spectra reveal the presence of interference fringes indicating the thickness uniformity and the surface homogeneity of the deposited samples. Photoluminescence behaviour of Mn-F co-doped SnO2 thin films was also studied. Photoluminescence spectra reveal the presence of the defects like oxygen vacancies in the materials. In addition, The electrical resistivity, volume carrier concentration, surface carrier concentration and electrical mobility were determined from Hall Effect measurements and the following results were obtained: n-type conductivity in all the deposited thin films, a low resistivity of 1.50×10-4 Ω cm, and a high electrical mobility of 45.40 cm2 V-1 s-1 with Mn co-doping concentration equals to 7 at. %. These experimental results show that the electrical properties of these thin films where greatly improved making them suitable as ohmic contacts in photovoltaic applications devices.

scholarly journals Physical Properties of ZnO Thin Films Codoped with Titanium and Hydrogen Prepared by RF Magnetron Sputtering with Different Substrate Temperatures

2015 ◽  
Vol 2015 ◽  
pp. 1-11 ◽  
Author(s):  
Fang-Hsing Wang ◽  
Jen-Chi Chao ◽  
Han-Wen Liu ◽  
Tsung-Kuei Kang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Surface ◽  
Hexagonal Wurtzite Structure ◽  
Rf Magnetron Sputtering ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Diffraction Patterns ◽  
Substrate Temperatures

Transparent conducting titanium-doped zinc oxide (TZO) thin films were prepared on glass substrates by RF magnetron sputtering using 1.5 wt% TiO2-doped ZnO as the target. Electrical, structural, and optical properties of films were investigated as a function of H2/(Ar + H2) flow ratios (RH) and substrate temperatures (TS). The optimalRHvalue for achieving high conducting TZO:H thin film decreased from 10% to 1% whenTSincreased from RT to 300°C. The lowest resistivity of9.2×10-4 Ω-cm was obtained asTS=100°C andRH=7.5%. X-ray diffraction patterns showed that all of TZO:H films had a hexagonal wurtzite structure with a preferred orientation in the (002) direction. Atomic force microscopy analysis revealed that the film surface roughness increased with increasingRH. The average visible transmittance decreased with increasingRHfor the RT-deposited film, while it had not considerably changed with differentRHfor the 300°C-deposited films. The optical bandgap increased asRHincreased, which is consistent with the Burstein-Moss effect. The figure of merits indicated thatTS=100°C andRH=7.5% were optimal conditions for TZO thin films as transparent conducting electrode applications.

ON THE ELECTRONIC TRANSPORT MECHANISM IN MAGNETRON-SPUTTERED POLYCRYSTALLINE ZnO THIN FILMS

2010 ◽  
Vol 24 (31) ◽  
pp. 6079-6090 ◽  
Author(s):  
I. I. RUSU ◽  
M. SMIRNOV ◽  
G. G. RUSU ◽  
A. P. RAMBU ◽  
G. I. RUSU
Keyword(s):  
Thin Films ◽  
Electronic Transport ◽  
Hexagonal Structure ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Crystallite Boundary

Zinc oxide ( ZnO ) thin films were deposited onto glass substrates by d.c. magnetron sputtering. The structural analysis, by X-ray diffraction and atomic force microscopy, indicate that the studied films are polycrystalline and have a wurtzite (hexagonal) structure. The film crystallites are preferentially oriented with (002) planes parallel to the substrates. The mechanism of electronic transport is explained in terms of Seto's model elaborated for polycrystalline semiconducting films (crystallite boundary trapping theory). Some parameters of used model (impurity concentration, density and energy of the trapping states, etc.) have been calculated. The optical bandgap (Eg0 = 3.28–3.37 eV ) was determined from absorption spectra.

Thin Film Metal Oxide Semiconductors Deposited on Polymeric Substrates

2001 ◽  
Vol 685 ◽  
Author(s):  
Elvira Fortunato ◽  
Patrícia Nunes ◽  
António Marques ◽  
Daniel Costa ◽  
Hugo ÁGuas ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Surface ◽  
Hexagonal Wurtzite Structure ◽  
Columnar Structure ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Type D ◽  
Transmission Electron ◽  
Hall Effect Measurements ◽  
Polymeric Substrates

AbstractHighly textured transparent conducting ZnO:Al thin films have been prepared by r.f. magnetron sputtering. The films were deposited on polyester (Mylar type D, 100 μm thickness) and glass substrates at room temperature. Surface stylus profiling, X-ray diffraction, scanning electron microscopy, transmission electron microscope and Hall effect measurements as a function of temperature, using the van der Pauw technique have characterized the films. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface (columnar structure). The ZnO:Al thin films with a resistivity as low as 3.6×10−2 ωcm have been obtained, as deposited.

Optical Properties of Zinc Oxide (ZnO) Thin Films Prepared by Spray Pyrolysis Method

2014 ◽  
Vol 895 ◽  
pp. 226-230 ◽  
Author(s):  
B.V. Rajendra ◽  
Vinayak Bhat ◽  
Dhananjaya Kekuda
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Spray Pyrolysis ◽  
Band Gap Energy ◽  
Zno Thin Films ◽  
Spray Pyrolysis Method ◽  
Glass Substrates ◽  
Pyrolysis Method ◽  
Substrate Temperatures

Zinc oxide (ZnO) thin films were deposited on the glass substrates using Zinc acetate dehydrate solution through spray pyrolysis method. The films were obtained by spraying 0.05M concentrated solution at a rate of 0.5ml for 10 min and were deposited at different substrate temperatures ranging from 473K to 673K. A comprehensive study was carried out to realize the effect of substrate temperatures and subsequent annealing on optical properties of the ZnO thin films. It was observed that the band gap energy decreases with increases the substrate temperature and annealing. Optical constants such as the refractive indexnand extinction coefficientkwere determined from transmittance spectrum in the ultravioletvisible (UVVIS) regions by Swanepoel envelope method and crystallinity was confirmed by Urbach tail and atomic force microscope images.

Thin Film Metal Oxide Semiconductors Deposited on Polymeric Substrates

2001 ◽  
Vol 666 ◽  
Author(s):  
Elvira Fortunato ◽  
Patrícia Nunes ◽  
António Marques ◽  
Daniel Costa ◽  
Hugo Águas ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Surface ◽  
Hexagonal Wurtzite Structure ◽  
Columnar Structure ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Type D ◽  
Transmission Electron ◽  
Hall Effect Measurements ◽  
Polymeric Substrates

ABSTRACTHighly textured transparent conducting ZnO:Al thin films have been prepared by r.f. magnetron sputtering. The films were deposited on polyester (Mylar type D, 100 µm thickness) and glass substrates at room temperature. Surface stylus profiling, X-ray diffraction, scanning electron microscopy, transmission electron microscope and Hall effect measurements as a function of temperature have been used to characterize the produced films. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface (columnar structure). The ZnO:Al thin films with a resistivity as low as 3.6×10−2 µcm have been obtained, as deposited.

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