Thin Film Metal Oxide Semiconductors Deposited on Polymeric Substrates

2001 ◽  
Vol 666 ◽  
Author(s):  
Elvira Fortunato ◽  
Patrícia Nunes ◽  
António Marques ◽  
Daniel Costa ◽  
Hugo Águas ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Surface ◽  
Hexagonal Wurtzite Structure ◽  
Columnar Structure ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Type D ◽  
Transmission Electron ◽  
Hall Effect Measurements ◽  
Polymeric Substrates

ABSTRACTHighly textured transparent conducting ZnO:Al thin films have been prepared by r.f. magnetron sputtering. The films were deposited on polyester (Mylar type D, 100 µm thickness) and glass substrates at room temperature. Surface stylus profiling, X-ray diffraction, scanning electron microscopy, transmission electron microscope and Hall effect measurements as a function of temperature have been used to characterize the produced films. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface (columnar structure). The ZnO:Al thin films with a resistivity as low as 3.6×10−2 µcm have been obtained, as deposited.

Thin Film Metal Oxide Semiconductors Deposited on Polymeric Substrates

2001 ◽  
Vol 685 ◽  
Author(s):  
Elvira Fortunato ◽  
Patrícia Nunes ◽  
António Marques ◽  
Daniel Costa ◽  
Hugo ÁGuas ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Surface ◽  
Hexagonal Wurtzite Structure ◽  
Columnar Structure ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Type D ◽  
Transmission Electron ◽  
Hall Effect Measurements ◽  
Polymeric Substrates

AbstractHighly textured transparent conducting ZnO:Al thin films have been prepared by r.f. magnetron sputtering. The films were deposited on polyester (Mylar type D, 100 μm thickness) and glass substrates at room temperature. Surface stylus profiling, X-ray diffraction, scanning electron microscopy, transmission electron microscope and Hall effect measurements as a function of temperature, using the van der Pauw technique have characterized the films. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface (columnar structure). The ZnO:Al thin films with a resistivity as low as 3.6×10−2 ωcm have been obtained, as deposited.

scholarly journals Growth and Characterization of (Tb,Yb) Co-Doping Sprayed ZnO Thin Films

Crystals ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 169 ◽  
Author(s):  
A. El hat ◽  
I. Chaki ◽  
R. Essajai ◽  
A. Mzerd ◽  
G. Schmerber ◽  
...  
Keyword(s):  
Thin Films ◽  
Secondary Phase ◽  
Hexagonal Wurtzite Structure ◽  
Zno Thin Films ◽  
Spray Pyrolysis Method ◽  
Efficient Energy Transfer ◽  
Force Microscopy ◽  
Co Doping ◽  
Glass Substrates ◽  
Hall Effect Measurements

Structural, optical and electrical properties of (ytterbium/terbium) co-doped ZnO thin films deposited on glass substrates using the spray pyrolysis method were investigated. The films exhibited the hexagonal wurtzite structure with a preferential orientation along (002) direction. No secondary phase was observed in the X-ray diffraction detection limit. Atomic force microscopy (AFM) was performed and root means square roughness (RMS) of our samples decreased with terbium content. Photoluminescence measurements showed a luminescence band at 980 nm which is characteristic of Yb3+ transition between the electronic levels 2F5/2 to 2F7/2. This is experimental evidence for an efficient energy transfer from the ZnO matrix to Yb. Hall Effect measurements gave a low electrical resistivity value around 6.0 × 10−3 Ω.cm. Such characteristics make these films of interest to photovoltaic devices.

scholarly journals Structural, Optical and Electrical Properties of Cu doped ZnO Thin Films Grown by RF Magnetron Sputtering: Application to Solar Photocatalysis

2021 ◽  
Author(s):  
Bilel Khalfallah ◽  
I. Riahi ◽  
F. Chaabouni
Keyword(s):  
Thin Films ◽  
Substrate Surface ◽  
Hexagonal Wurtzite Structure ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Bandgap Energy ◽  
Glass Substrates ◽  
Zno Powders ◽  
Doped Zno ◽  
Spectroscopy Studies

Abstract RF sputtered undoped and Cu doped ZnO (CZO) thin films were deposited on unheated glass substrates using a mixed Cu2O and ZnO powders target at different Cu concentrations of 0, 1, 2, 3 and 4 wt.%. The effects of copper concentration on the structural, electrical, optical and photocatalytic properties of CZO films have been studied. From XRD and Raman spectroscopy studies, it was found that the deposited films were polycrystalline with a predominant hexagonal wurtzite structure along the c-axis perpendicular to the substrate surface. The presence of multiple interference fringes in the transmittance and reflectance spectra shows the good homogeneity of the films. All the films are highly transparent with transparency reaching 80% indicating the possibility to use these films as an optical window. The absorption tail gradually shifted towards a higher wavelength side, which resulted in the decrease of bandgap energy from 3.35 to 3.26 eV. All the sputtered films are highly conductive with a conductivity reaching 104 S.cm− 1.The effect of Cu-doping on the photocatalytic activity of ZnO thin films for the degradation of methylene blue (MB) dye was studied under sunlight irradiation and the results showed that the Cudoping provokes appreciable degradation of MB and reached a maximum for the 1 wt.% Cu doped ZnO film.

Zinc Oxide Thin Films Deposited by RF Magnetron Sputtering on Mylar Substrates at Room Temperature

2001 ◽  
Vol 685 ◽  
Author(s):  
Elvira Fortunato ◽  
Patrícia Nunes ◽  
António Marques ◽  
Daniel Costa ◽  
Hugo Águas ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Low Cost ◽  
Substrate Surface ◽  
Hexagonal Wurtzite Structure ◽  
Oxide Thin Films ◽  
Large Area ◽  
Axis Orientation

AbstractAluminium doped zinc oxide thin films (ZnO:Al) have been deposited on polyester (Mylar type D, 100 μm thickness) substrates at room temperature by r.f. magnetron sputtering. The structural, morphological, optical and electrical properties of the deposited films have been studied. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface. The ZnO:Al thin films with 85% transmittance in the visible and infra-red region and a resistivity as low as 3.6×10−2 ωcm have been obtained, as deposited. The obtained results are comparable to those ones obtained on glass substrates, opening a new field of low cost, light weight, small volume, flexible and unbreakable large area optoelectronic devices.

Influence of Sputtering Power on the Structure and Photoelectric Property of Ga Doped ZnO Films

2012 ◽  
Vol 591-593 ◽  
pp. 922-926
Author(s):  
Lei Wu ◽  
Qing Nan Zhao ◽  
Gang Wu ◽  
Deng Kui Miao
Keyword(s):  
Thin Films ◽  
Visible Light ◽  
Light Transmittance ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Sputtering Power ◽  
Hall Effect Measurements ◽  
Doped Zno

Ga-doped ZnO (GZO) films were prepared on glass substrates at 523K temperature by non-reactive DC magnetron sputtering. The effects of sputtering power on microstructure and properties of the GZO films were investigated by X-ray diffraction (XRD), field-emission scanning electron microscope (FESEM), Hall effect measurements and UV-Vis-NIR spectrometer. The results show that GZO thin films exhibit high c-axis-orientation, and the intensity of peak increase as the enhanced of sputtering power; the increase of power will reduce the film’s visible-light transmittance, but for all of the GZO thin films the average transmittance of the visible-light is above 80%. The sheet resistance of GZO films decreases when the sputtering power gradually heightened from 80W to 200W. The lowest resistivity of 6.559×10-4Ω•cm can be obtained in the condition of the sputtering power is 100W, and the lowest square resistance is 7.9Ω/□.

Microstructural and Electrical Conductivity of Annealed ZnO Thin Films

2014 ◽  
Vol 970 ◽  
pp. 120-123 ◽  
Author(s):  
Peh Ly Tat ◽  
Karim bin Deraman ◽  
Wan Nurulhuda Wan Shamsuri ◽  
Rosli Hussin ◽  
Zuhairi Ibrahim
Keyword(s):  
Thin Films ◽  
Low Cost ◽  
Sol Gel ◽  
Hexagonal Wurtzite Structure ◽  
Dip Coating ◽  
Zno Thin Films ◽  
Zno Films ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Afm Micrographs

Undoped nanocrystalline ZnO thin films were deposited onto the glass substrates via the low cost sol-gel dip coating method. The as-grown ZnO films were annealed at the temperatures ranging from 400 °C to 550 °C. The X-ray diffraction (XRD) pattern revealed that the annealed ZnO films were polycrystalline with hexagonal wurtzite structure and majority preferentially grow along (002) c-axis orientation. Atomic force microscopy (AFM) micrographs showed the improvement of RMS roughness and grain size as annealing temperature increased. The ZnO films that annealed at 500 oC exhibited the lowest resistivity value.

Characterization of Zinc Oxide Thin Films Deposited by rf Magnetron Sputtering on Mylar Substrates

2001 ◽  
Vol 666 ◽  
Author(s):  
Elvira Fortunato ◽  
Patrícia Nunes ◽  
António Marques ◽  
Daniel Costa ◽  
Hugo Águas ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Low Cost ◽  
Substrate Surface ◽  
Hexagonal Wurtzite Structure ◽  
Rf Magnetron Sputtering ◽  
Oxide Thin Films ◽  
Large Area ◽  
Axis Orientation

ABSTRACTAluminium doped zinc oxide thin films (ZnO:Al) have been deposited on polyester (Mylar type D, 100 µm thickness) substrates at room temperature by r.f. magnetron sputtering. The structural, morphological, optical and electrical properties of the deposited films have been studied. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface. The ZnO:Al thin films with 85% transmittance in the visible and infra-red region and a resistivity as low as 3.6×10−2 ωcm have been obtained, as deposited. The obtained results are comparable to those ones obtained on glass substrates, opening a new field of low cost, light weight, small volume, flexible and unbreakable large area optoelectronic devices.

Microstructural, Optical and Electrical Properties of ZnO:Sn Thin Films Deposited by Sol-Gel Method

2013 ◽  
Vol 652-654 ◽  
pp. 519-522
Author(s):  
Jun Chen ◽  
Yue Hui Hu ◽  
Hong Hao Hu ◽  
Yi Chuan Chen
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Hexagonal Structure ◽  
Optical And Electrical Properties ◽  
Axis Orientation ◽  
Gel Method ◽  
Sol Gel Method ◽  
Sn Doping ◽  
Glass Substrates

Transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto silica glass substrates by the sol–gel method. The effect of different Sn doping on the crystallinity, structural, optical and electrical properties of ZnO:Sn thin films were investigated by XRD, SEM, UV-VIS spectrophotometer and four-point probe method respectively. Among all of ZnO:Sn thin films in this paper, Sn-doped with 2 at.% exhibited the best properties, the surface demonstrate an accumulative crystallization and hexagonal structure, with a high-preferential c-axis orientation, namely an average transmittance of 90% and the resistivity of 19.6 Ω·cm.

DIRECT GROWTH OF EPITAXIAL La0.67Ca0.33MnO3 - δ THIN FILMS

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1611-1615 ◽  
Author(s):  
G. CAMPILLO ◽  
L. F. CASTRO ◽  
P. VIVAS ◽  
E. BACA ◽  
P. PRIETO ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Surface ◽  
Electrical Characterization ◽  
Annealing Treatment ◽  
Pure Oxygen ◽  
X Ray Diffraction ◽  
Atomic Force ◽  
Transmission Electron ◽  
Afm Analysis ◽  
Direct Growth

La 0.67 Ca 0.33 MnO 3 - δ thin films were deposited using a high-pressure dc-sputtering process. Pure oxygen at a pressure of 3.8 mbar was used as sputtering gas. The films were grown on (001) LaAlO 3 and (001) SrTiO 3 substrates at heater temperature of 850° without any annealing treatment. The formation of highly a-axis-oriented films with sharp interface with substrate surface is demonstrated by X-ray diffraction, transmission electron microscope (TEM), and atomic force microscope (AFM) analysis. Electrical characterization revealed a metal–insulator transition at T MI = 276 K, and magnetic characterization showed good magnetic properties with a PM–FM transition at TC ≈ 262 K.

Thickness Dependent Structural and Optical Properties of Cadmium Selenide Thin Films

2013 ◽  
Vol 665 ◽  
pp. 159-167
Author(s):  
M.S. Jani ◽  
H.S. Patel ◽  
J.R. Rathod ◽  
K.D. Patel ◽  
V.M. Pathak ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Hexagonal Wurtzite Structure ◽  
Optical Bandgap ◽  
Bandgap Energy ◽  
Structural And Optical Properties ◽  
Structural Investigations ◽  
Glass Substrates ◽  
Optical Bandgap Energy ◽  
Different Thickness

In this paper structural and optical properties of CdSe thin films with different thickness deposited by thermal evaporation under vacuum onto glass substrates are presented. The structural investigations performed by means of XRD technique showed that the films have a polycrystalline and hexagonal (würtzite) structure. The values of some important parameters of the studied films (absorption coefficient and optical bandgap energy) are determined from transmission spectra. The values of the optical bandgap energy (Eg) calculated from the absorption spectra, ranged between 1.67 - 1.74 eV.

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