scholarly journals Performance Assessment of W-Band Radiometers: Direct versus Heterodyne Detections

Electronics ◽  
2021 ◽  
Vol 10 (18) ◽  
pp. 2317
Author(s):  
Juan Pablo Pascual ◽  
Beatriz Aja ◽  
Enrique Villa ◽  
Jose Vicente Terán ◽  
Luisa de la Fuente ◽  
...  

W-Band radiometers using intermediate frequency down-conversion (super-heterodyne) and direct detection are compared. Both receivers consist of two W-band low noise amplifiers and an 80-to-101 GHz filter, which conforms to the reception frequency band, in the front-end module. The back-end module of the first receiver comprises a subharmonic mixer, intermediate frequency (IF) amplification and a square-law detector. For direct detection, a W-Band detector replaces the mixer and the intermediate frequency detection stages. The performance of the whole receivers has been simulated requiring special techniques, based on data from the experimental characterization of each subsystem. In the super-heterodyne implementation a local oscillator at 27.1 GHz (with 8 dBm) with a x3 frequency multiplier is used, exhibiting an overall conversion gain around 48 dB, a noise figure around 4 dB, and an effective bandwidth over 10 GHz. In the direct detection scheme, slightly better noise performance is obtained, with a wider bandwidth, around 20 GHz, since there is no IF bandwidth limitation (~15 GHz), and even using the same 80-to-101 GHz filter, the detector can operate through the whole W-band. Moreover, W-band detector has higher sensitivity than the IF detector, increasing slightly the gain. In both cases, the receiver performance is characterized when a broadband noise input signal is applied. The radiometer characteristics have been obtained working as a total power radiometer and as a Dicke radiometer when an optical chopper is used to modulate the incoming signal. Combining this particular super-heterodyne or direct detection topologies and total power or Dicke modes of operation, four different cases are compared and discussed, achieving similar sensitivities, but better performances in terms of equivalent bandwidth and noise for the direct detection radiometer. It should be noted that this conclusion comes from a particular set of components, which we could consider as typical, but we cannot exclude other conclusions for different components, particularly for different mixers and detectors.

Author(s):  
Eric W. Bryerton ◽  
Xiaobing Mei ◽  
Young-Min Kim ◽  
William Deal ◽  
Wayne Yoshida ◽  
...  

2011 ◽  
Vol 3 (2) ◽  
pp. 139-145 ◽  
Author(s):  
Srdjan Glisic ◽  
J. Christoph Scheytt ◽  
Yaoming Sun ◽  
Frank Herzel ◽  
Ruoyu Wang ◽  
...  

A fully integrated transmitter (TX) and receiver (RX) front-end chipset, produced in 0.25 µm SiGe:C bipolar and complementary metal oxide semiconductor (BiCMOS) technology, is presented. The front-end is intended for high-speed wireless communication in the unlicensed ISM band of 9 GHz around 60 GHz. The TXand RX features a modified heterodyne topology with a sliding intermediate frequency. The TX features a 12 GHz in-phase and quadrature (I/Q) mixer, an intermediate frequency (IF) amplifier, a phase-locked loop, a 60 GHz mixer, an image-rejection filter, and a power amplifier. The RX features a low-noise amplifier (LNA), a 60 GHz mixer, a phase-locked loop (PLL), and an IF demodulator. The measured 1-dB compression point at the TX output is 12.6 dBm and the saturated power is 16.2 dBm. The LNA has measured noise figure of 6.5 dB at 60 GHz. Error-free data transmission with a 16 quadrature amplitude modulation (QAM) orthogonal frequency-division multiplexing (OFDM) signal and data rate of 3.6 Gbit/s (without coding 4.8 Gbit/s) over 15 m was demonstrated. This is the best reported result regarding both the data rate and transmission distance in SiGe and CMOS without beamforming.


2021 ◽  
Author(s):  
Kenji Ohmori ◽  
Shuhei Amakawa

Characterization of broadband noise of MOSFETs from room temperature down to 120 K in fine temperature steps is presented. A MOSFET is mounted on a reusable printed circuit board vehicle with a built-in low-noise amplifier, and the vehicle is loaded into a cryogenic chamber. The vehicle allows noise measurement in the frequency range from 50 kHz to 100 MHz. At low frequencies, it enables extraction of activation energies associated with electron trapping sites. At high frequencies, as has been suggested by noise figure measurements, the white noise of MOSFETs is shown to be dominated by the shot noise, which has much weaker temperature dependence than the thermal noise. The shot noise will be a problematic noise source in broadband RF CMOS circuits operating at cryogenic temperatures.<div><br></div>


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