Low-phase-noise, phase-locked tunable millimeter-wave signal source for calibration of W-band low-noise astronomical heterodyne receivers

2008 ◽  
Author(s):  
Tzu ◽  
Yuh-Jing Hwang ◽  
Wei-Ting Wong ◽  
Tashun Wei ◽  
Yo-Shen Lin
Keyword(s):  
Phase Noise ◽  
Millimeter Wave ◽  
Low Noise ◽  
Signal Source ◽  
Wave Signal ◽  
W Band ◽  
Heterodyne Receivers ◽  
Low Phase Noise

scholarly journals Opto-Electronic Oscillators for Micro- and Millimeter Wave Signal Generation

Electronics ◽  
2021 ◽  
Vol 10 (7) ◽  
pp. 857
Author(s):  
Mehmet Alp Ilgaz ◽  
Bostjan Batagelj
Keyword(s):  
Phase Noise ◽  
Millimeter Wave ◽  
Delay Line ◽  
Access Network ◽  
Local Oscillator ◽  
Signal Generation ◽  
High Frequency Signal ◽  
Wave Signal ◽  
Noise Characteristics ◽  
Low Phase Noise

High-frequency signal oscillators are devices needed for a variety of scientific disciplines. One of their fundamental requirements is low phase noise in the micro- and millimeter wave ranges. The opto-electronic oscillator (OEO) is a good candidate for this, as it is capable of generating a signal with very low phase noise in the micro- and millimeter wave ranges. The OEO consists of an optical resonator with electrical feedback components. The optical components form a delay line, which has the advantage that the phase noise is independent of the oscillator’s frequency. Furthermore, by using a long delay line, the phase noise characteristics of the oscillator are improved. This makes it possible to widen the range of possible OEO applications. In this paper we have reviewed the state of the art for OEOs and micro- and millimeter wave signal generation as well as new developments for OEOs and the use of OEOs in a variety of applications. In addition, a possible implementation of a centralized OEO signal distribution as a local oscillator for a 5G radio access network (RAN) is demonstrated.

Power Efficient Implementation of Low Noise CMOS LC VCO using 32nm Technology for RF Applications

2018 ◽  
Vol 6 (8) ◽  
pp. 53
Author(s):  
Shitesh Tiwari ◽  
Sumant Katiyal ◽  
Parag Parandkar
Keyword(s):  
Power Consumption ◽  
Phase Noise ◽  
Tuning Range ◽  
Low Voltage ◽  
Performance Comparison ◽  
Low Noise ◽  
Center Frequency ◽  
Voltage Controlled Oscillator ◽  
Low Phase Noise ◽  
Lc Vco

Voltage Controlled Oscillator (VCO) is an integral component of most of the receivers such as GSM, GPS etc. As name indicates, oscillation is controlled by varying the voltage at the capacitor of LC tank. By varying the voltage, VCO can generate variable frequency of oscillation. Different VCO Parameters are contrasted on the basis of phase noise, tuning range, power consumption and FOM. Out of these phase noise is dependent on quality factor, power consumption, oscillation frequency and current. So, design of LC VCO at low power, low phase noise can be obtained with low bias current at low voltage.  Nanosize transistors are also contributes towards low phase noise. This paper demonstrates the design of low phase noise LC VCO with 4.89 GHz tuning range from 7.33-11.22 GHz with center frequency at 7 GHz. The design uses 32nm technology with tuning voltage of 0-1.2 V. A very effective Phase noise of -114 dBc / Hz is obtained with FOM of -181 dBc/Hz. The proposed work has been compared with five peer LC VCO designs working at higher feature sizes and outcome of this performance comparison dictates that the proposed work working at better 32 nm technology outperformed amongst others in terms of achieving low Tuning voltage and moderate FoM, overshadowed by a little expense of power dissipation. 

A low-phase noise D-band signal source based on 130 nm SiGe BiCMOS and 0.15 µm AlGaN/GaN HEMT technologies

2019 ◽  
Vol 11 (5-6) ◽  
pp. 456-465
Author(s):  
Thanh Ngoc Thi Do ◽  
Mingquan Bao ◽  
Zhongxia Simon He ◽  
Ahmed Hassona ◽  
Dan Kuylenstierna ◽  
...  
Keyword(s):  
Phase Noise ◽  
Output Power ◽  
Communication Systems ◽  
Signal Source ◽  
Limiting Amplifier ◽  
Gan Hemt ◽  
Data Rates ◽  
Sige Bicmos ◽  
Low Phase Noise ◽  
Band Signal

AbstractThis paper reports on a record-low-phase noise D-band signal source with 5 dBm output power, and 1.3 GHz tuning range. The source is based on the unconventional combination of a fundamental frequency 23 GHz oscillator in 150 nm AlGaN/GaN HEMT technology followed by a 130 nm SiGe BiCMOS MMIC including a sixtupler and an amplifier. The amplifier operates in compression mode as power-limiting amplifier, to equalize the source output power so that it is nearly independent of the oscillator's gate and drain bias voltages used for tuning the frequency of the source. The choice of using a GaN HEMT oscillator is motivated by the need for a low oscillator noise floor, which recently has been demonstrated as a bottle-neck for data rates in wideband millimeter-wave communication systems. The phase noise performance of this signal source is −128 dBc/Hz at 10 MHz-offset. To the best of the authors’ knowledge, this result is the lowest reported phase noise of D-band signal source.

Sign in / Sign up

Export Citation Format

Share Document