scholarly journals Use of Optical Emission Spectroscopy Data for Fault Detection of Mass Flow Controller in Plasma Etch Equipment

Electronics ◽  
2022 ◽  
Vol 11 (2) ◽  
pp. 253
Author(s):  
Hyukjoon Kwon ◽  
Sang Jeen Hong

To minimize wafer yield losses by misprocessing during semiconductor manufacturing, faster and more accurate fault detection during the plasma process are desired to increase production yields. Process faults can be caused by abnormal equipment conditions, and the performance drifts of the parts or components of complicated semiconductor fabrication equipment are some of the most unnoticed factors that eventually change the plasma conditions. In this work, we propose improved stability and accuracy of process fault detection using optical emission spectroscopy (OES) data. Under a controlled experimental setup of arbitrarily induced fault scenarios, the extended isolation forest (EIF) approach was used to detect anomalies in OES data compared with the conventional isolation forest method in terms of accuracy and speed. We also used the OES data to generate features related to electron temperature and found that using the electron temperature features together with equipment status variable identification data (SVID) and OES data improved the prediction accuracy of process/equipment fault detection by a maximum of 0.84%.

Coatings ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1221
Author(s):  
Jun-Hyoung Park ◽  
Ji-Ho Cho ◽  
Jung-Sik Yoon ◽  
Jung-Ho Song

We present a non-invasive approach for monitoring plasma parameters such as the electron temperature and density inside a radio-frequency (RF) plasma nitridation device using optical emission spectroscopy (OES) in conjunction with multivariate data analysis. Instead of relying on a theoretical model of the plasma emission to extract plasma parameters from the OES, an empirical correlation was established on the basis of simultaneous OES and other diagnostics. Additionally, we developed a machine learning (ML)-based virtual metrology model for real-time Te and ne monitoring in plasma nitridation processes using an in situ OES sensor. The results showed that the prediction accuracy of electron density was 97% and that of electron temperature was 90%. This method is especially useful in plasma processing because it provides in-situ and real-time analysis without disturbing the plasma or interfering with the process.


2013 ◽  
Vol 770 ◽  
pp. 245-248 ◽  
Author(s):  
Kanchaya Honglertkongsakul

Argon plasma jet in a single-electrode configuration was generated at low temperature and atmospheric pressure by 50 kHz radiofrequency power supply. Optical Emission Spectroscopy (OES) was used to investigate the local emissivity of argon plasma in the range between 200 and 1,100 nm. The spatial distribution of reactive species was measured at different distances of the plasma expansion from the nozzle exit such as 0.0, 0.5, 1.0, 1.5, 2.0, 2.5 and 3.0 cm. These measurements were obtained to analyze the plasma parameters such as electron temperature and electron density. The effect of distances of the plasma expansion from the nozzle exit on the plasma parameters was studied. The main intensive argon lines were found in the region between 690 and 970 nm. The electron temperature was found in the range of 0.5-1.1 eV. The electron density was found in the range of 4.0x1012-1.2x1013 cm-3. The plasma parameters strongly depended on the distances of the plasma expansion from the nozzle exit.


2012 ◽  
Vol 79 (1) ◽  
pp. 25-31
Author(s):  
K. T. A. L. BURM

AbstractThe production of aluminium and zinc plasmas for the deposition of coatings upon steel strip is monitored by optical emission spectroscopy measurements. The plasma is created from an inductive source. The atom and the ion densities as well as the electron temperature are obtained such that the plasma can be characterized. It will be shown that the obtained plasmas are typically highly ionized and deviate from thermal equilibrium.


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