scholarly journals Two-Phase Resonant Converter to Drive High-Power LED Lamps

Electronics ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 53 ◽  
Author(s):  
Christian Brañas ◽  
Rosario Casanueva ◽  
Francisco J. Díaz ◽  
Francisco J. Azcondo

This paper presents the design and modeling of a two-phase resonant converter that drives a LED lamp with a high-frequency pulsed current free of instabilities and flicker effect, fulfilling the recommendations of the IEEE PAR 1789-2015, so that it enables visible light-based communication at a 10 kB/s bit rate. The dynamic study of the converter takes into consideration the effect of the reflected impedance of the output filter on the AC side. In order to evaluate the dynamic response of the converter, a Spice model is defined. A 120 W prototype intended for street lighting applications has been built to validate the analysis and modeling.

2008 ◽  
Vol 44 (1) ◽  
pp. 213-222 ◽  
Author(s):  
Wei Shen ◽  
Fei Wang ◽  
Dushan Boroyevich ◽  
C. Wesley Tipton IV

2013 ◽  
Vol 60 (11) ◽  
pp. 4805-4819 ◽  
Author(s):  
Thiago B. Soeiro ◽  
Jonas Muhlethaler ◽  
Jorgen Linner ◽  
Per Ranstad ◽  
Johann W. Kolar

2021 ◽  
Vol 11 (23) ◽  
pp. 11350
Author(s):  
Seyed Abolfazl Mortazavizadeh ◽  
Simone Palazzo ◽  
Arturo Amendola ◽  
Enzo De Santis ◽  
Dario Di Ruzza ◽  
...  

Soft switching for both primary and secondary side devices is available by using LLC converters. This resonant converter is an ideal candidate for today’s high frequency, high efficiency, and high power density applications like adapters, Uninterrupted Power Supplies (UPS), Solid State Transformers (SST), electric vehicle battery chargers, renewable energy systems, servers, and telecom systems. Using Gallium-Nitride (GaN)-based power switches in this converter merits more and more switching frequency, power density, and efficiency. Therefore, the present paper focused on GaN-based LLC resonant converters. The converter structure, operation regions, design steps, and drive system are described precisely. Then its losses are discussed, and the magnets and inductance characteristics are investigated. After that, various interleaved topologies, as a solution to improve power density and decrease current ripples, have been discussed. Also, some challenges and concerns related to GaN-based LLC converters have been reviewed. Commercially available power transistors based on various technologies, i.e., GaN HEMT, Silicon (Si) MOSFET, and Silicon Carbide (SiC) have been compared. Finally, the LLC resonant converter has been simulated by taking advantage of LTspice and GaN HEMT merits, as compared with Si MOSFETs.


2021 ◽  
Vol 118 (2) ◽  
pp. 022407
Author(s):  
Hideyuki Takahashi ◽  
Yuya Ishikawa ◽  
Tsubasa Okamoto ◽  
Daiki Hachiya ◽  
Kazuki Dono ◽  
...  

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