PCSEL Performance of Type-I InGaAsSb Double-QWs Laser Structure Prepared by MBE

This paper discusses the issue of controlling the epitaxial growth of mixed group V alloys to form a type-I InGaAsSb/AlGaAsSb double quantum wells (QWs) structure. We also discuss the run-to-run reproducibility of lattice-matched AlGaAsSb alloys and strained In0.35Ga0.65As0.095Sb0.905 in terms of growth parameters (V/III ratio, Sb2/As2 ratio). Molecular beam epitaxy (MBE) was used to grow two type-I InGaAsSb double-QWs laser structures differing only in the composition of the bottom cladding layer: Al0.85Ga0.15As0.072Sb0.928 (sample A) and Al0.5Ga0.5As0.043Sb0.957 (sample B). Both samples were respectively used in the fabrication of photonic crystal surface-emitting lasers (PCSELs). Sample A presented surface lasing action from circular as well as triangular photonic crystals. Sample B did not present surface lasing due to the deterioration of the active region during the growth of the upper cladding. Our findings underline the importance of temperature in the epitaxial formation of AlxGa1−xAsySb1−y in terms of lasing performance.

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Vertical cavity surface emitting lasers with AlGaInAs/AlGaAs quantum wells grown by molecular beam epitaxy

2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666) ◽

10.1109/cleoe.2003.1312192 ◽

2004 ◽

Author(s):

P. Leinonen ◽

T. Leinonen ◽

J. Viheriala ◽

M. Pessa ◽

Y.K. Kim ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Cavity Surface ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Emitting Lasers ◽

Vertical Cavity

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Mid-Infrared Photonic-Crystal Surface-Emitting Lasers with InGaAs/GaAsSb ‘W’-Type Quantum Wells Grown on InP Substrate

Photonics ◽

10.3390/photonics5040032 ◽

2018 ◽

Vol 5 (4) ◽

pp. 32 ◽

Cited By ~ 1

Author(s):

Zong-Lin Li ◽

Yuan-Chi Kang ◽

Gray Lin ◽

Chien-Ping Lee

Keyword(s):

Photonic Crystal ◽

Quantum Wells ◽

Crystal Surface ◽

Cavity Resonance ◽

Etch Depth ◽

Wavelength Shift ◽

Lattice Period ◽

Lasing Wavelength ◽

Surface Emitting Lasers ◽

Emitting Lasers

InP-based InGaAs/GaAsSb ‘W’-type quantum well (QW) photonic-crystal (PC) surface- emitting lasers (SELs) of 2.2 μm wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Photonic-crystal surface-emitting laser (PCSEL) devices are investigated in terms of PC parameters of etch depth, lattice period, and filling factor. The lasing emissions cover wavelengths from 2182 nm to 2253 nm. The temperature-dependent lasing characteristics are also studied in terms of lattice period. All PCSELs show consistent lasing wavelength shift against temperature at a rate of 0.17 nm/K. The characteristic temperatures of PCSELs are extracted and discussed with respect to wavelength detuning between QW gain peak and PC cavity resonance.

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Effect of Hole Shift on Threshold Characteristics of GaSb-Based Double-Hole Photonic-Crystal Surface-Emitting Lasers

Micromachines ◽

10.3390/mi12050468 ◽

2021 ◽

Vol 12 (5) ◽

pp. 468

Author(s):

Yu-Hsun Huang ◽

Zi-Xian Yang ◽

Su-Ling Cheng ◽

Chien-Hung Lin ◽

Gray Lin ◽

...

Keyword(s):

Photonic Crystal ◽

Crystal Surface ◽

Band Edge ◽

Square Lattice ◽

Type I ◽

Lattice Period ◽

Lasing Wavelength ◽

Surface Emitting Lasers ◽

Lattice Unit ◽

Emitting Lasers

Photonic-crystal (PC) surface-emitting lasers (SELs) with double-hole structure in the square-lattice unit cell were fabricated on GaSb-based type-I InGaAsSb/AlGaAsSb heterostructures. The relative shift of two holes was varied within one half of the lattice period. We measured the lasing wavelengths and threshold pumping densities of 16 PC-SELs and investigated their dependence on the double-hole shift. The experimental results were compared to the simulated wavelengths and threshold gains of four band-edge modes. The measured lasing wavelength did not exhibit switching of band-edge mode; however, the calculated lowest threshold mode switched as the double-hole shift exceeded one quarter of the lattice period. The identification of band-edge lasing mode revealed that modal gain discrimination was dominated over by its mode wavelength separation.

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