Two-dimensional Plasmonic Crystal Surface Emitting Lasers with Gain Medium of InGaAs/GaAs Quantum Wells

2020 ◽  
Author(s):  
Kuan-Ying Huang ◽  
Chu-Chun Wu ◽  
Gray Lin ◽  
Sheng-Di Lin
Keyword(s):  
Quantum Wells ◽  
Crystal Surface ◽  
Gain Medium ◽  
Two Dimensional ◽  
Plasmonic Crystal ◽  
Surface Emitting Lasers ◽  
Emitting Lasers

scholarly journals Electronic control of coherence in a two-dimensional array of photonic crystal surface emitting lasers

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
R. J. E. Taylor ◽  
D. T. D. Childs ◽  
P. Ivanov ◽  
B. J. Stevens ◽  
N. Babazadeh ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Crystal Surface ◽  
Two Dimensional ◽  
Electronic Control ◽  
Dimensional Array ◽  
Surface Emitting Lasers ◽  
Emitting Lasers

scholarly journals Mid-Infrared Photonic-Crystal Surface-Emitting Lasers with InGaAs/GaAsSb ‘W’-Type Quantum Wells Grown on InP Substrate

Photonics ◽  
2018 ◽  
Vol 5 (4) ◽  
pp. 32 ◽  
Author(s):  
Zong-Lin Li ◽  
Yuan-Chi Kang ◽  
Gray Lin ◽  
Chien-Ping Lee
Keyword(s):  
Photonic Crystal ◽  
Quantum Wells ◽  
Crystal Surface ◽  
Cavity Resonance ◽  
Etch Depth ◽  
Wavelength Shift ◽  
Lattice Period ◽  
Lasing Wavelength ◽  
Surface Emitting Lasers ◽  
Emitting Lasers

InP-based InGaAs/GaAsSb ‘W’-type quantum well (QW) photonic-crystal (PC) surface- emitting lasers (SELs) of 2.2 μm wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Photonic-crystal surface-emitting laser (PCSEL) devices are investigated in terms of PC parameters of etch depth, lattice period, and filling factor. The lasing emissions cover wavelengths from 2182 nm to 2253 nm. The temperature-dependent lasing characteristics are also studied in terms of lattice period. All PCSELs show consistent lasing wavelength shift against temperature at a rate of 0.17 nm/K. The characteristic temperatures of PCSELs are extracted and discussed with respect to wavelength detuning between QW gain peak and PC cavity resonance.

scholarly journals PCSEL Performance of Type-I InGaAsSb Double-QWs Laser Structure Prepared by MBE

Materials ◽  
2019 ◽  
Vol 12 (2) ◽  
pp. 317 ◽  
Author(s):  
Hui-Wen Cheng ◽  
Shen-Chieh Lin ◽  
Zong-Lin Li ◽  
Kien-Wen Sun ◽  
Chien-Ping Lee
Keyword(s):  
Quantum Wells ◽  
Molecular Beam ◽  
Crystal Surface ◽  
Growth Parameters ◽  
Double Quantum ◽  
Type I ◽  
Group V ◽  
Surface Emitting Lasers ◽  
Emitting Lasers ◽  
Lattice Matched

This paper discusses the issue of controlling the epitaxial growth of mixed group V alloys to form a type-I InGaAsSb/AlGaAsSb double quantum wells (QWs) structure. We also discuss the run-to-run reproducibility of lattice-matched AlGaAsSb alloys and strained In0.35Ga0.65As0.095Sb0.905 in terms of growth parameters (V/III ratio, Sb2/As2 ratio). Molecular beam epitaxy (MBE) was used to grow two type-I InGaAsSb double-QWs laser structures differing only in the composition of the bottom cladding layer: Al0.85Ga0.15As0.072Sb0.928 (sample A) and Al0.5Ga0.5As0.043Sb0.957 (sample B). Both samples were respectively used in the fabrication of photonic crystal surface-emitting lasers (PCSELs). Sample A presented surface lasing action from circular as well as triangular photonic crystals. Sample B did not present surface lasing due to the deterioration of the active region during the growth of the upper cladding. Our findings underline the importance of temperature in the epitaxial formation of AlxGa1−xAsySb1−y in terms of lasing performance.

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