Raman and Optical Properties of the Pulsed Laser Annealing Phase of SI

1981 ◽  
Vol 4 ◽  
Author(s):  
A. Compaan ◽  
A. Aydinli ◽  
M. C. Lee ◽  
H. W. LO
Keyword(s):  
Optical Properties ◽  
Laser Pulse ◽  
Absorption Coefficient ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Experimental Tests ◽  
Small Temperature ◽  
Pulsed Laser Annealing ◽  
Near Ir ◽  
Transmission Measurements

ABSTRACTRaman measurements of temperature reported earlier have been repeated using a doubled Nd: YAG pulse for excitation and an electronically delayed dye laser pulse. These results, together with a variety of experimental tests of the Raman method, confirm the validity of the small temperature rise during pulsed laser annealing. Transmission measurements spanning the visible and near IR show that there exists a thin (∼ 70 nm) layer at the surface in which the induced absorption coefficient is ∼ 7 × 105 cm−1.

scholarly journals Pulsed Laser Annealing Effect on Optical and Structural Properties of ZnS/ZnSe Heterostructures

2019 ◽  
Vol 6 (1) ◽  
pp. 23-29
Author(s):  
Haidar Howari
Keyword(s):  
Thin Films ◽  
Absorption Coefficient ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Annealing Process ◽  
Reflection Spectra ◽  
Pulsed Laser Annealing ◽  
Before And After ◽  
Transmission And Reflection Spectra ◽  
Transmission And Reflection

Studies of pulsed laser annealing (PLA) on semiconductor thin films were performed to examine changes of the optical and structural parameters due to the laser heat. Thin films of ZnS/ZnSe were deposited on quartz substrates at a pressure of 8.2*10-6 mbar using PVD technique. These thin films were annealed at different laser powers using CO2 pulsed laser. Transmission and reflection spectra were recorded before and after the annealing process. A decrease in the transmission and reflection spectra after annealing is observed. The absorption coefficient, refractive index, damping coefficient and dielectric constant were calculated before and after the annealing process. Changes in the optical parameters are found after the annealing process. The energy band gaps of ZnS and ZnSe have been determined. Upon annealing, an increase in the absorption coefficient is observed which is due to an improvement in the granular nanostructure of the ZnS/ZnSe thin films. XRD patterns of the prepared samples were obtained before and after the annealing procedure and revealed an enhancement in the crystallite structure upon annealing.

Structural and optical properties of Si hyperdoped with Te by ion implantation and pulsed laser annealing

Vacuum ◽  
2020 ◽  
Vol 178 ◽  
pp. 109434 ◽  
Author(s):  
Fadei F. Komarov ◽  
Nikita S. Nechaev ◽  
Gennadii D. Ivlev ◽  
Liudmila A. Vlasukova ◽  
Irina N. Parkhomenko ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Structural And Optical Properties ◽  
Pulsed Laser Annealing

Effect of Pulsed Laser Annealing on Optical Properties of Selenium-Hyperdoped Silicon

2021 ◽  
Author(s):  
F. F. Komarov ◽  
I. N. Parkhomenko ◽  
O. V. Mil’chanin ◽  
G. D. Ivlev ◽  
L. A. Vlasukova ◽  
...  
Keyword(s):  
Optical Properties ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Hyperdoped Silicon

Effect of High Repetition Pulsed Laser Annealing on Optical Properties of Phosphorus Ion-Implanted ZnO Nanorods

2013 ◽  
Vol 699 ◽  
pp. 383-386
Author(s):  
Tetsuya Shimogaki ◽  
Taihei Ofuji ◽  
Norihiro Tetsuyama ◽  
Kota Okazaki ◽  
Mitsuhiro Higashihata ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Repetition Rate ◽  
Laser Annealing ◽  
Zno Nanorods ◽  
Pulsed Laser ◽  
High Repetition ◽  
Pulsed Laser Annealing ◽  
Krf Excimer Laser ◽  
Ion Implanted

We report on the effect of high repetition pulsed laser annealing with a KrF excimer laser on the optical properties of phosphorus ion-implanted ZnO nanorods. The recovery levels of phosphorus ion-implanted ZnO nanorods have been measured by photoluminescence spectra and cathode luminescence (CL) images. After ion implantation on the surface of ZnO nanorods, CL was disappeared over 400 nm below the surface due to the damage caused by ion implantation. When the annealing was performed at a low repetition, CL was recovered only shallow area below the surface. The depth of the annealed area was increased with the repetition rate of the annealing laser. By optimizing the annealing conditions such as the repetition rate, the irradiation fluence and so on, we have succeeded to anneal the whole damaged area over 400 nm in depth and to observe CL. Thus, the effectiveness of high repetition pulsed laser annealing on phosphorus ion-implanted ZnO nanorods was demonstrated.

Influence of pulsed laser annealing on the optical properties of ZnO nanorods

2012 ◽  
Vol 209 (8) ◽  
pp. 1461-1466 ◽  
Author(s):  
T. N. Lin ◽  
C. P. Huang ◽  
G. W. Shu ◽  
J. L. Shen ◽  
C. S. Hsiao ◽  
...  
Keyword(s):  
Optical Properties ◽  
Laser Annealing ◽  
Zno Nanorods ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

A Detailed Examination of Time-Resolved Pulsed Raman Temeperature Measurements of Laser Annealed Silicon

1983 ◽  
Vol 13 ◽  
Author(s):  
G. E. Jellison ◽  
D. H. Lowndes ◽  
R. F. Wood
Keyword(s):  
Optical Properties ◽  
Pulse Width ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Detailed Examination ◽  
Temperature Gradients ◽  
Probe Laser ◽  
Time Resolved ◽  
Pulsed Laser Annealing ◽  
Anti Stokes

ABSTRACTRaman temperature measurements during pulsed laser annealing of Si by Compaan and co-workers are critically examined. It has been shown previously that the Stokes to anti-Stokes ratio depends critically upon the optical properties of silicon as a function of temperature. These dependences, coupled with the large spatial and temporal temperature gradients normally found immediately after the high reflectivity phase, result in large variations in the calculated temperature depending upon the probe laser pulse width and the pulse-to-pulse and spatial variations in the annealing pulse energy density.

A Laser Triggered Self-Sustaining Metals-Compound Semiconductor Transition for AlSb

1981 ◽  
Vol 4 ◽  
Author(s):  
R. Andrew ◽  
L. Baufay ◽  
A. Pigeolet ◽  
L.D. Laude
Keyword(s):  
Laser Pulse ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
Pulsed Laser Annealing ◽  
Short Laser Pulses ◽  
Thermally Triggered ◽  
Heat Of Transformation ◽  
Complete Transformation

ABSTRACTThe preparation of AlSb thin films by pulsed laser annealing of Al/Sb sandwiches is studied in order to resolve some past controversy about the temperature rise induced by the laser pulse. Using 1000 Ȧ thick two layer films supported by TEM grids, we investigate the energy threshold for complete transformation as a function of pulse duration from 15 nsec to 100 msec, and of ambient temperature from −100°C to 250°C.We thence calculate the temperature effect directly induced by the laser to be about 930°C, or approximately the melting point of the metals, whereas inert gas furnace anneals of comparable films show transformation at this temperature occuring only in about 100 sec. We discuss the isoenergetic nature of the system for short laser pulses and the role of the heat of transformation, and thus conclude that the reaction is thermally triggered by the laser pulse but is to some extent self-sustaining via the heat of transformation locally distributed. This model is also shown to have equal validity for the systems CdTe, CdSe and AlAs.

Raman Studies of Carrier Activation in Laser Annealed GaAs Capped with Silicon Nitride

1986 ◽  
Vol 74 ◽  
Author(s):  
A. Compaan ◽  
S. C. Abbi ◽  
H. D. Yao ◽  
A. Bhat ◽  
F. Hashmi
Keyword(s):  
Silicon Nitride ◽  
Laser Pulse ◽  
Raman Scattering ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Dye Laser ◽  
Pulsed Laser Annealing ◽  
Wide Range ◽  
Xecl Excimer Laser

AbstractCarrier concentrations exceeding 1019/cm3 in GaAs implanted with Si (2 × 1014/cm2 @ 140 keV) have been obtained by pulsed laser annealing with either a dye laser (λ = 728 nm) or a XeCl excimer laser (λ = 308 nm). Carrier concentrations were measured by plasmon Raman scattering over a wide range of anneal energy densities. Compared with capless laser annealing, much higher carrier activations were achieved when the annealing laser pulse was incident through a Si3N4 cap.

Faster Quenching by Silicon Pulsed Laser Annealing Under Water

1986 ◽  
Vol 74 ◽  
Author(s):  
A. Polman ◽  
S. Roorda ◽  
S. B. Ogale ◽  
F. W. Saris
Keyword(s):  
Laser Pulse ◽  
Laser Annealing ◽  
Crystalline Silicon ◽  
Diffusion Theory ◽  
Pulsed Laser ◽  
Silicon Layer ◽  
Water Layer ◽  
Amorphous Layer ◽  
Pulsed Laser Annealing ◽  
Novel Method

AbstractA novel method of pulsed laser processing of ion-implanted silicon is presented, in which samples are irradiated in water ambient. The water layer in contact with the silicon during irradiationh as a considerable influence on melting and solidificationd ynamics. Still, perfect epitaxy of a thin amorphous layer can be obtained using this method.For epitaxy to occur on a sample irradiated under water, 40 % more absorbed energy is necessary than for a sample irradiated in air. This indicates the occurrence of a considerable heat-flow from the silicon into the water layer during the laser pulse. From impurity redistribution after irradiation it is found that by processing a sample under water liquid-phase diffusion is reduced. Diffusion theory arguments indicate that this can be due to a reduction in total melt duration by about afactor 2–3. This can be due to faster cooling of the liquid silicon layer after the laser pulse whereas the melt-in time might be influenced as well. As a consequence, shallower impurity profiles can be obtained in crystalline silicon. No oxygen incorporation is detected and the surface morphology is not disturbed using this new process.

scholarly journals In Situ Monitoring of Pulsed Laser Annealing of Eu-Doped Oxide Thin Films

Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7576
Author(s):  
Michal Novotný ◽  
Jan Remsa ◽  
Šárka Havlová ◽  
Joris More-Chevalier ◽  
Stefan Andrei Irimiciuc ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
In Situ Monitoring ◽  
Oxide Thin Films ◽  
Force Microscopy ◽  
Pulsed Laser Annealing ◽  
Doped Oxide

Eu3+-doped oxide thin films possess a great potential for several emerging applications in optics, optoelectronics, and sensors. The applications demand maximizing Eu3+ photoluminescence response. Eu-doped ZnO, TiO2, and Lu2O3 thin films were deposited by Pulsed Laser Deposition (PLD). Pulsed UV Laser Annealing (PLA) was utilized to modify the properties of the films. In situ monitoring of the evolution of optical properties (photoluminescence and transmittance) at PLA was realized to optimize efficiently PLA conditions. The changes in optical properties were related to structural, microstructural, and surface properties characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The substantial increase of Eu3+ emission was observed for all annealed materials. PLA induces crystallization of TiO2 and Lu2O3 amorphous matrix, while in the case of already nanocrystalline ZnO, rather surface smoothening0related grains’ coalescence was observed.

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