scholarly journals Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric

Membranes ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 902
Author(s):  
Yiming Liu ◽  
Chang Liu ◽  
Houyun Qin ◽  
Chong Peng ◽  
Mingxin Lu ◽  
...  

In this paper, an InGaZnO thin-film transistor (TFT) based on plasma oxidation of silicon nitride (SiNx) gate dielectric with small subthreshold swing (SS) and enhanced stability under negative bias illumination stress (NBIS) have been investigated in detail. The mechanism of the high-performance InGaZnO TFT with plasma-oxidized SiNx gate dielectric was also explored. The X-ray photoelectron spectroscopy (XPS) results confirmed that an oxygen-rich layer formed on the surface of the SiNx layer and the amount of oxygen vacancy near the interface between SiNx and InGaZnO layer was suppressed via pre-implanted oxygen on SiNx gate dielectric before deposition of the InGaZnO channel layer. Moreover, the conductance method was employed to directly extract the density of the interface trap (Dit) in InGaZnO TFT to verify the reduction in oxygen vacancy after plasma oxidation. The proposed InGaZnO TFT with plasma oxidation exhibited a field-effect mobility of 16.46 cm2/V·s, threshold voltage (Vth) of −0.10 V, Ion/Ioff over 108, SS of 97 mV/decade, and Vth shift of −0.37 V after NBIS. The plasma oxidation on SiNx gate dielectric provides a novel approach for suppressing the interface trap for high-performance InGaZnO TFT.

2006 ◽  
Vol 965 ◽  
Author(s):  
Hua-Chi Cheng ◽  
Yu-Rung Peng ◽  
Chao-An Chung ◽  
Wei-Hsin Hou ◽  
Zing-Way Pei

ABSTRACTWe have demonstrated organic thin-film transistor devices on synthesis paper of polypropylene (PP). All the fabrications are in solution-based processes except electrodes. As a barrier and smoother layer, photosensitive epoxy, 5μm-thich was coated on the paper substrate by using slit die coating. Polyvinyl phenol (PVP) was mixed with poly (melamine-co-formaldehyde) methylated, filmed by spin coating and ultraviolet (UV) cross linked to provide the gate dielectric layer. Using poly (3-hexylthiophene) as an active layer, a high-performance organic transistor with field effect mobility up to 0.006 cm2/ V s and an on/off ratio of 50 can be achieved. For the applications in flexible and disposable electronics, to built organic transistors on a cheap synthesis paper substrate can extremely lower the cost.


2008 ◽  
Vol 93 (7) ◽  
pp. 073305 ◽  
Author(s):  
Flora M. Li ◽  
Parul Dhagat ◽  
Hanna M. Haverinen ◽  
Iain McCulloch ◽  
Martin Heeney ◽  
...  

RSC Advances ◽  
2017 ◽  
Vol 7 (78) ◽  
pp. 49353-49360 ◽  
Author(s):  
Jenner H. L. Ngai ◽  
Johnny K. W. Ho ◽  
Rocky K. H. Chan ◽  
S. H. Cheung ◽  
Louis M. Leung ◽  
...  

Micron-size organolead perovskite crystals grown on insulating polymeric surfaces as gate dielectric materials for high performance thin film transistors.


2010 ◽  
Vol 13 (8) ◽  
pp. H274 ◽  
Author(s):  
Dae-Ho Son ◽  
Dae-Hwan Kim ◽  
Jung-Hye Kim ◽  
Shi-Joon Sung ◽  
Eun-Ae Jung ◽  
...  

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