Design and Investigation of the High Performance Doping-Less TFET with Ge/Si0.6Ge0.4/Si Heterojunction

A high performance doping-less tunneling field effect transistor with Ge/Si0.6Ge0.4/Si heterojunction (H-DLTFET) is proposed in this paper. Compared to the conventional doping-less tunneling field effect transistor (DLTFET), the source and channel regions of H-DLTFET respectively use the germanium and Si0.6Ge0.4 materials to get the steeper energy band, which can also increase the electric field of source/channel tunneling junction. Meanwhile, the double-gate process is used to improve the gate-to-channel control. In addition, the effects of Ge content, electrode work functions, and device structure parameters on the performance of H-DLTFET are researched in detail, and then the above optimal device structure parameters can be obtained. Compared to the DLTFET, the simulation results show that the maximum on-state current, trans-conductance, and output current of H-DLTFET are all increased by one order of magnitude, whereas the off-state current is reduced by two orders of magnitude, so the switching ratio increase by three orders of magnitude. At the same time, the cut-off frequency and gain bandwidth product of H-DLTFET increase from 1.75 GHz and 0.23 GHz to 23.6 GHz and 4.69 GHz, respectively. Therefore, the H-DLTFET is more suitable for the ultra-low power integrated circuits.

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Optimal design for a high performance H-JLTFET using HfO2 as a gate dielectric for ultra low power applications

RSC Advances ◽

10.1039/c4ra00538d ◽

2014 ◽

Vol 4 (43) ◽

pp. 22803-22807 ◽

Cited By ~ 17

Author(s):

Pranav Kumar Asthana ◽

Bahniman Ghosh ◽

Shiromani Bal Mukund Rahi ◽

Yogesh Goswami

Keyword(s):

Optimal Design ◽

Low Power ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Ultra Low Power ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

In this paper we have proposed an optimal design for a hetero-junctionless tunnel field effect transistor using HfO2 as a gate dielectric.

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Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors

npj 2D Materials and Applications ◽

10.1038/s41699-020-00181-1 ◽

2021 ◽

Vol 5 (1) ◽

Author(s):

Aryan Afzalian

Keyword(s):

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

High Mobility ◽

Complementary Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Grand Challenge ◽

Gate Length ◽

Delay Performance ◽

Effect Transistor

AbstractUsing accurate dissipative DFT-NEGF atomistic-simulation techniques within the Wannier-Function formalism, we give a fresh look at the possibility of sub-10-nm scaling for high-performance complementary metal oxide semiconductor (CMOS) applications. We show that a combination of good electrostatic control together with high mobility is paramount to meet the stringent roadmap targets. Such requirements typically play against each other at sub-10-nm gate length for MOS transistors made of conventional semiconductor materials like Si, Ge, or III–V and dimensional scaling is expected to end ~12 nm gate-length (pitch of 40 nm). We demonstrate that using alternative 2D channel materials, such as the less-explored HfS2 or ZrS2, high-drive current down to ~6 nm is, however, achievable. We also propose a dynamically doped field-effect transistor concept, that scales better than its MOSFET counterpart. Used in combination with a high-mobility material such as HfS2, it allows for keeping the stringent high-performance CMOS on current and competitive energy-delay performance, when scaling down to virtually 0 nm gate length using a single-gate architecture and an ultra-compact design (pitch of 22 nm). The dynamically doped field-effect transistor further addresses the grand-challenge of doping in ultra-scaled devices and 2D materials in particular.

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Gold Nanoparticle-Mediated Noncovalent Functionalization of Graphene for Field-Effect Transistor

Nanoscale Advances ◽

10.1039/d0na00603c ◽

2021 ◽

Author(s):

Dongha Shin ◽

Hwa Rang Kim ◽

Byung Hee Hong

Keyword(s):

Transport Properties ◽

Gold Nanoparticle ◽

Electrical Transport ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Electrical Transport Properties ◽

Noncovalent Functionalization ◽

Effect Transistor

Since of its first discovery, graphene has attracted much attention because of the unique electrical transport properties that can be applied to high-performance field-effect transistor (FET). However, mounting chemical functionalities...

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Ultimate vertical gate-all-around metal–oxide–semiconductor field-effect transistor and its three-dimensional integrated circuits

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106046 ◽

2021 ◽

Vol 134 ◽

pp. 106046

Author(s):

Shujun Ye ◽

Kikuo Yamabe ◽

Tetsuo Endoh

Keyword(s):

Integrated Circuits ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor

Nanoscale Research Letters ◽

10.1186/s11671-021-03561-8 ◽

2021 ◽

Vol 16 (1) ◽

Author(s):

Xiaoshi Jin ◽

Yicheng Wang ◽

Kailu Ma ◽

Meile Wu ◽

Xi Liu ◽

...

Keyword(s):

Integrated Circuits ◽

Field Effect ◽

Field Effect Transistor ◽

Structural Parameters ◽

Cmos Integrated Circuits ◽

Region Length ◽

Internal Mechanism ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

Switching Characteristics

AbstractA bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated circuits compared to the conventional asymmetrical TFET. The effects of the structural parameters, e.g., the doping concentrations of the N+ region and P+ region, length of the N+ region and length of the intrinsic region, on the device performances, e.g., the transfer characteristics, Ion–Ioff ratio and subthreshold swing, and the internal mechanism are discussed and explained in detail.

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