scholarly journals Low-Voltage and High-Reliability RF MEMS Switch with Combined Electrothermal and Electrostatic Actuation

Micromachines ◽  
2021 ◽  
Vol 12 (10) ◽  
pp. 1237
Author(s):  
Yong Zhu ◽  
Jitendra Pal
Keyword(s):  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Low Voltage ◽  
High Reliability ◽  
Actuation Voltage ◽  
Electrostatic Actuation ◽  
Mems Switch ◽  
Thermal Actuation ◽  
Electrothermal Actuation ◽  
Power Handling Capability

In this paper, we report a novel laterally actuated Radio Frequency (RF) Microelectromechanical Systems (MEMS) switch, which is based on a combination of electrothermal actuation and electrostatic latching hold. The switch takes the advantages of both actuation mechanisms: large actuation force, low actuation voltage, and high reliability of the thermal actuation for initial movement; and low power consumption of the electrostatic actuation for holding the switch in position in ON state. The switch with an initial switch gap of 7 µm has an electrothermal actuation voltage of 7 V and an electrostatic holding voltage of 21 V. The switch achieves superior RF performances: the measured insertion loss is −0.73 dB at 6 GHz, whereas the isolation is −46 dB at 6 GHz. In addition, the switch shows high reliability and power handling capability: the switch can operate up to 10 million cycles without failure with 1 W power applied to its signal line.

scholarly journals Erratum: Zhu, Y.; Pal, J. Low-Voltage and High-Reliability RF MEMS Switch with Combined Electrothermal and Electrostatic Actuation. Micromachines 2021, 12, 1237

Micromachines ◽  
2021 ◽  
Vol 12 (11) ◽  
pp. 1389
Author(s):  
Yong Zhu ◽  
Jitendra Pal
Keyword(s):  
Rf Mems ◽  
Low Voltage ◽  
High Reliability ◽  
Electrostatic Actuation ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Published Paper

The authors would like to update the Figure 3 and Figure 7 to the published paper [...]

scholarly journals Development of Broadband Low Actuation Voltage RF MEM Switches

2002 ◽  
Vol 25 (1) ◽  
pp. 97-111 ◽  
Author(s):  
S. C. Shen ◽  
D. Becher ◽  
Z. Fan ◽  
D. Caruth ◽  
Milton Feng
Keyword(s):  
Insertion Loss ◽  
Integrated Circuit ◽  
Rf Mems ◽  
Low Voltage ◽  
Actuation Voltage ◽  
University Of Illinois ◽  
Mems Switch ◽  
The University ◽  
Better Than ◽  
Millimeter Wave Circuits

Low insertion loss, high isolation RF MEM switches have been thought of as one of the most attractive devices for space-based reconfigurable antenna and integrated circuit applications. Many RF MEMS switch topologies have been reported and they all show superior RF characteristics compared to semiconductor-based counterparts. At the University of Illinois, we developed state-of-the-art broadband low-voltage RF MEM switches using cantilever and hinged topologies. We demonstrated promisingsub-10volts operation for both switch topologies.The switches have an insertion loss of less than 0:1 dB, and an isolation of better than 25 dB over the frequency range from 0.25 to 40 GHz. The RF Model of the MEM switch was also established. The low voltage RF MEM switches will provide a solution for low voltage and highly linear switching methods for the next generation of broadband RF, microwave, and millimeter-wave circuits.

Structural Dynamics of an RF MEMS Switch

2005 ◽  
Author(s):  
Hartono Sumali ◽  
Jaron D. Kuppers ◽  
David A. Czaplewski ◽  
Jordan E. Massad ◽  
Christopher W. Dyck
Keyword(s):  
Rf Mems ◽  
Actuation Voltage ◽  
Three Dimensional ◽  
Electrostatic Actuation ◽  
Electrical Signal ◽  
Laser Doppler Velocimeter ◽  
Dimensional Model ◽  
Three Dimensional Model ◽  
Rf Mems Switch ◽  
Mems Switch

The radio-frequency micro-electromechanical system (RF MEMS) switch comprises a plate suspended by four double-cantilever springs. When electrostatic actuation is applied, the plate moves toward the substrate and closes the switch. This article discusses how simulation and experimental methods improve the performance of the switch by suppressing mechanical rebounds and thus electrical signal discontinuities. To accurately simulate the mechanical motion of the switch, a high-fidelity three-dimensional finite element model is created to couple the solid dynamics with the electrostatic actuation. The displacement of the switch at various points is measured using a laser Doppler velocimeter through a microscope. The operational deflection shapes agree with the model. The three-dimensional model produces the necessary information for an effective one-dimensional model. The latter model is used to calculate an actuation voltage waveform to minimize switch velocity at closure, thereby suppressing switch rebound. The waveforms can be refined experimentally to compensate for switch property variations. Laboratory tests indicate that the waveform suppresses or eliminates rebound events.

An RF-MEMS Switch With Low-Actuation Voltage and High Reliability

2006 ◽  
Vol 15 (6) ◽  
pp. 1605-1611 ◽  
Author(s):  
Seong-Dae Lee ◽  
Byoung-Chul Jun ◽  
Sam-Dong Kim ◽  
Hyun-Chang Park ◽  
Jin-Koo Rhee ◽  
...  
Keyword(s):  
Rf Mems ◽  
High Reliability ◽  
Actuation Voltage ◽  
Rf Mems Switch ◽  
Mems Switch

Analysis of Au metal–metal contacts in a lateral actuated RF MEMS switch

2014 ◽  
Vol 6 (5) ◽  
pp. 481-486 ◽  
Author(s):  
Markus Gaitzsch ◽  
Steffen Kurth ◽  
Sven Voigt ◽  
Sven Haas ◽  
Thomas Gessner
Keyword(s):  
Rf Mems ◽  
High Reliability ◽  
Actuation Voltage ◽  
High Time Resolution ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Current Path ◽  
Metal Metal ◽  
Rf Performance ◽  
5 Ghz

This paper reports on the ohmic contacts of an radio-frequency micro-electro-mechanical-system (RF MEMS) switch. The structure of the MEMS is described briefly to give information about the organization of the switch device. The most significant performance data are reported, indicating very low actuation voltage below 5 V, switching time of <10 µs and good RF performance for frequencies up to 5 GHz. Since the contact performance is a key for excellent RF performance in the actuated state and for high reliability as well the article is focused on the contacts. It is supposed that asperities are building the current path in a closed contact, which is proved by measurements of the closing process with high time resolution. The measurements exhibit very good power-handling capabilities of the contacts. The reported findings render prior theoretical experiments with a physical device.

Application of RF MEMS Switch for Reconfiguring Micromachined Antennas

2014 ◽  
Vol 704 ◽  
pp. 293-298
Author(s):  
Jija Rajmohan ◽  
M.R. Baiju
Keyword(s):  
Rf Mems ◽  
Low Voltage ◽  
Actuation Voltage ◽  
Rf Mems Switch ◽  
Capacitive Switch ◽  
Mems Switches ◽  
Wireless Applications ◽  
Mems Switch ◽  
Rf Components ◽  
Rf Mems Switches

For mobile and wireless applications where the size of the system has to be minimized, antenna and RF components are to be integrated on to the same substrate. The contradicting requirements of the substrate with respect to the antenna and the RF circuit can be resolved by using micromachined antennas. If the principle of reconfigurability is applied to the micromachined antenna, it increases the versatality of the system. This paper proposes reconfigurability of micromachined antennas using RF MEMS switches. In the case of micromachined antennas, which involve low voltage signals, RF MEMS switches with low actuation voltage are required for achieving reconfigurability. In this paper an RF MEMS capacitive switch operating at a low actuation voltage of 1 Volt is presented

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