scholarly journals Tunable Photodetectors via In Situ Thermal Conversion of TiS3 to TiO2

Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 711 ◽  
Author(s):  
Foad Ghasemi ◽  
Riccardo Frisenda ◽  
Eduardo Flores ◽  
Nikos Papadopoulos ◽  
Robert Biele ◽  
...  

In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled oxidation of titanium trisulfide (TiS3), a layered semicon-ductor that has attracted much attention recently thanks to its quasi-1D electronic and optoelectron-ic properties and its direct bandgap of 1.1 eV. Heating TiS3 in air above 300 °C gradually converts it into TiO2, a semiconductor with a wide bandgap of 3.2 eV with applications in photo-electrochemistry and catalysis. In this work, we investigate the controlled thermal oxidation of indi-vidual TiS3 nanoribbons and its influence on the optoelectronic properties of TiS3-based photodetec-tors. We observe a step-wise change in the cut-off wavelength from its pristine value ~1000 nm to 450 nm after subjecting the TiS3 devices to subsequent thermal treatment cycles. Ab-initio and many-body calculations confirm an increase in the bandgap of titanium oxysulfide (TiO2-xSx) when in-creasing the amount of oxygen and reducing the amount of sulfur.

Author(s):  
Foad Ghasemi ◽  
Riccardo Frinsenda ◽  
Eduardo Flores ◽  
Nikos Papadopoulos ◽  
Robert Biele ◽  
...  

In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled oxidation of titanium trisulfide (TiS3), a layered semiconductor that attracted much attention recently thanks to its quasi-1D electronic and optoelectronic properties and its direct bandgap of 1.1 eV. Heating TiS3 in air above 300 °C gradually converts it into TiO2, a semiconductor with a wide bandgap of 3.2 eV with applications in photo-electrochemistry and catalysis. In this work, we investigate the controlled thermal oxidation of individual TiS3 nanoribbons and its influence on the optoelectronic properties of TiS3-based photodetectors. We observe a step-wise change in the cut-off wavelength from its pristine value ~1000 nm to 450 nm after subjecting the TiS3 devices to subsequent thermal treatment cycles. Ab-initio and many-body calculations confirm an increase of the bandgap of titanium oxysulfide (TiO2-xSx) when increasing the amount of oxygen and reducing the amount of sulfur.


2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Mohsen Moazzami Gudarzi ◽  
Maryana Asaad ◽  
Boyang Mao ◽  
Gergo Pinter ◽  
Jianqiang Guo ◽  
...  

AbstractThe use of two-dimensional materials in bulk functional applications requires the ability to fabricate defect-free 2D sheets with large aspect ratios. Despite huge research efforts, current bulk exfoliation methods require a compromise between the quality of the final flakes and their lateral size, restricting the effectiveness of the product. In this work, we describe an intercalation-assisted exfoliation route, which allows the production of high-quality graphene, hexagonal boron nitride, and molybdenum disulfide 2D sheets with average aspect ratios 30 times larger than that obtained via conventional liquid-phase exfoliation. The combination of chlorosulfuric acid intercalation with in situ pyrene sulfonate functionalisation produces a suspension of thin large-area flakes, which are stable in various polar solvents. The described method is simple and requires no special laboratory conditions. We demonstrate that these suspensions can be used for fabrication of laminates and coatings with electrical properties suitable for a number of real-life applications.


2019 ◽  
Vol 21 (39) ◽  
pp. 22140-22148 ◽  
Author(s):  
Tuan V. Vu ◽  
Nguyen V. Hieu ◽  
Le T. P. Thao ◽  
Nguyen N. Hieu ◽  
Huynh V. Phuc ◽  
...  

van der Waals heterostructures by stacking different two-dimensional materials are being considered as potential materials for nanoelectronic and optoelectronic devices because they can show the most potential advantages of individual 2D materials.


2021 ◽  
Author(s):  
Mubashir A. Kharadi ◽  
Gul Faroz A. Malik ◽  
Farooq A. Khanday

2D materials like transition metal dichalcogenides, black phosphorous, silicene, graphene are at the forefront of being the most potent 2D materials for optoelectronic applications because of their exceptional properties. Several application-specific photodetectors based on 2D materials have been designed and manufactured due to a wide range and layer-dependent bandgaps. Different 2D materials stacked together give rise to many surprising electronic and optoelectronic phenomena of the junctions based on 2D materials. This has resulted in a lot of popularity of 2D heterostructures as compared to the original 2D materials. This chapter presents the progress of optoelectronic devices (photodetectors) based on 2D materials and their heterostructures.


Author(s):  
Vipin Kumar ◽  
Aditya Dey ◽  
Siby Thomas ◽  
Mohsen Asle Zaeem ◽  
Debesh R. Roy

Most of the known two-dimensional materials lack a suitable wide-bandgap, and hydrogenation can be effectively utilized to tune the bandgap of some 2D materials.


2021 ◽  
Author(s):  
Teresa Crisci ◽  
Luigi Moretti ◽  
Mariano Gioffrè ◽  
Maurizio Casalino

Since its discovery in 2004, graphene has attracted the interest of the scientific community due to its excellent properties of high carrier mobility, flexibility, strong light-matter interaction and broadband absorption. Despite of its weak light optical absorption and zero band gap, graphene has demonstrated impressive results as active material for optoelectronic devices. This success pushed towards the investigation of new two-dimensional (2D) materials to be employed in a next generation of optoelectronic devices with particular reference to the photodetectors. Indeed, most of 2D materials can be transferred on many substrates, including silicon, opening the path to the development of Schottky junctions to be used for the infrared detection. Although Schottky near-infrared silicon photodetectors based on metals are not a new concept in literature the employment of two-dimensional materials instead of metals is relatively new and it is leading to silicon-based photodetectors with unprecedented performance in the infrared regime. This chapter aims, first to elucidate the physical effect and the working principles of these devices, then to describe the main structures reported in literature, finally to discuss the most significant results obtained in recent years.


2021 ◽  
Author(s):  
Nasuha Rohaizad ◽  
Carmen C. Mayorga-Martinez ◽  
Michaela Fojtů ◽  
Naziah M. Latiff ◽  
Martin Pumera

2D materials are at the forefront of materials research, advancing in applications for biomedical and bio/sensing. We elucidate properties of 2D materials beyond graphene that are relevant to those applications, as well as their correlation with toxicity.


2020 ◽  
Vol 22 (18) ◽  
pp. 10351-10359 ◽  
Author(s):  
M. Idrees ◽  
H. U. Din ◽  
Shafiq Ur Rehman ◽  
M. Shafiq ◽  
Yasir Saeed ◽  
...  

Vertical stacking of two-dimensional materials into layered van der Waals heterostructures has recently been considered as a promising candidate for photocatalytic and optoelectronic devices because it can combine the advantages of the individual 2D materials.


2019 ◽  
Author(s):  
Andres Castellanos-Gomez ◽  
Patricia Gant ◽  
Riccardo Frisenda

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