The Features of Phase Stability of GaN and AlN Films at Nanolevel
Keyword(s):
Recently, two-dimensional gallium and aluminum nitrides have triggered a vast interest in their tunable optical and electronic properties. Continuation of this research requires a detailed understanding of their atomic structure. Here, by using first-principles calculations we reported a systematic study of phase stability of 2D-GaN and 2D-AlN. We showed that the films undergo a phase transition from a graphene-like to a wurtzite structure with a thickness increase, whereas the early reported body-centered-tetragonal phase requires specific conditions for stabilization. Additionally, we studied how the functionalization of the surface can modify the film structure as exemplified by hydrogenation.
2016 ◽
Vol 18
(18)
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pp. 12682-12688
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Keyword(s):
2019 ◽
Vol 7
(9)
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pp. 4971-4976
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2013 ◽
Vol 68
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pp. 361-366
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Keyword(s):