scholarly journals Large Area Few-Layer Hexagonal Boron Nitride as a Raman Enhancement Material

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 622
Author(s):  
Nilanjan Basu ◽  
Moram Sree Satya Bharathi ◽  
Manju Sharma ◽  
Kanchan Yadav ◽  
Avanish Singh Parmar ◽  
...  

Increasingly, two-dimensional (2D) materials are being investigated for their potential use as surface-enhanced Raman spectroscopy (SERS) active substrates. Hexagonal Boron Nitride (hBN), a layered 2D material analogous to graphene, is mostly used as a passivation layer/dielectric substrate for nanoelectronics application. We have investigated the SERS activity of few-layer hBN film synthesized on copper foil using atmospheric pressure chemical vapor deposition. We have drop casted the probe molecules onto the hBN substrate and measured the enhancement effect due to the substrate using a 532 nm excitation laser. We observed an enhancement of ≈103 for malachite green and ≈104 for methylene blue and rhodamine 6G dyes, respectively. The observed enhancement factors are consistent with the theoretically calculated interaction energies of MB > R6G > MG with a single layer of hBN. We also observed that the enhancement is independent of the film thickness and surface morphology. We demonstrate that the hBN films are highly stable, and even for older hBN films prepared 7 months earlier, we were able to achieve similar enhancements when compared to freshly prepared films. Our detailed results and analyses demonstrate the versatility and durability of hBN films for SERS applications.

2015 ◽  
Vol 26 (27) ◽  
pp. 275601 ◽  
Author(s):  
Yao Wen ◽  
Xunzhong Shang ◽  
Ji Dong ◽  
Kai Xu ◽  
Jun He ◽  
...  

2017 ◽  
Vol 9 (46) ◽  
pp. 39895-39900 ◽  
Author(s):  
Fei Hui ◽  
Wenjing Fang ◽  
Wei Sun Leong ◽  
Tewa Kpulun ◽  
Haozhe Wang ◽  
...  

2020 ◽  
Vol 843 ◽  
pp. 90-96
Author(s):  
Xi Chen ◽  
Chun Bo Tan ◽  
Kai Ran Luan ◽  
Shuai Wang ◽  
Fang Ye Li ◽  
...  

Hexagonal boron nitride (hBN) films were epitaxially grown on (100)-Oriented silicon and c-plane sapphire (α-Al2O3) substrates via a low-pressure chemical vapor deposition (LPCVD) method with boron trichloride (BCl3) and ammonia (NH3) as the boron source and nitrogen source. Crystalline quality differences between hBN films grown on different substrates are studied and discussed by XPS, Raman spectroscopy, XRD and SEM characterizations. All the characterization results indicate that the sapphire substrate is more suitable for epitaxial growth of hBN films than silicon substrates.


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