scholarly journals A Review of Self-Seeded Germanium Nanowires: Synthesis, Growth Mechanisms and Potential Applications

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 2002
Author(s):  
Adrià Garcia-Gil ◽  
Subhajit Biswas ◽  
Justin D. Holmes
Keyword(s):  
Electronic Band Structure ◽  
Phonon Transport ◽  
Nanowire Growth ◽  
Seeded Growth ◽  
Electronic Band ◽  
Germanium Nanowires ◽  
Catalyst Metal ◽  
Potential Applications ◽  
Growth Method ◽  
On Chip

Ge nanowires are playing a big role in the development of new functional microelectronic modules, such as gate-all-around field-effect transistor devices, on-chip lasers and photodetectors. The widely used three-phase bottom-up growth method utilising a foreign catalyst metal or metalloid is by far the most popular for Ge nanowire growth. However, to fully utilise the potential of Ge nanowires, it is important to explore and understand alternative and functional growth paradigms such as self-seeded nanowire growth, where nanowire growth is usually directed by the in situ-formed catalysts of the growth material, i.e., Ge in this case. Additionally, it is important to understand how the self-seeded nanowires can benefit the device application of nanomaterials as the additional metal seeding can influence electron and phonon transport, and the electronic band structure in the nanomaterials. Here, we review recent advances in the growth and application of self-seeded Ge and Ge-based binary alloy (GeSn) nanowires. Different fabrication methods for growing self-seeded Ge nanowires are delineated and correlated with metal seeded growth. This review also highlights the requirement and advantage of self-seeded growth approach for Ge nanomaterials in the potential applications in energy storage and nanoelectronic devices.

First-principles calculations on structure and electronic properties of α-zirconium hydrogen phosphate

MRS Advances ◽  
2019 ◽  
Vol 4 (50) ◽  
pp. 2699-2707
Author(s):  
V. W. Elloh ◽  
Soni Mishra ◽  
A. Yaya ◽  
Abhishek Kumar Mishra
Keyword(s):  
Band Gap ◽  
First Principles ◽  
Density Functional ◽  
Semiconductor Device ◽  
Electronic Band Structure ◽  
Structural Parameters ◽  
Hydrogen Phosphate ◽  
Electronic Band ◽  
Potential Applications ◽  
Direct Band

AbstractLayered zirconium hydrogen phosphate intercalation compounds can be easily tuned, leading to potential applications in many fields, specifically by introducing them in different polymeric composites as nanofillers. Employing first-principles density functional theory based calculations, we have investigated ground state electronic structure properties of α-zirconium hydrogen phosphate (α-ZrP). We discuss the structure and electronic band structure, where projected density of states calculations have been discussed to understand the different atomic orbitals contributions to electronic bands. ZrP has numerous properties of interest for use in many semiconductor device structures, specifically, layered zirconium hydrogen phosphate has substantial promise for both optical devices and for high power electronics due to its large direct band gap. Our structural calculations suggest that layered zirconium hydrogen phosphate exhibits monoclinic structure. The calculated structural parameters and band gap are in good agreement with available experimental data.

scholarly journals Fullerenes

1993 ◽  
Vol 8 (8) ◽  
pp. 2054-2097 ◽  
Author(s):  
M.S. Dresselhaus ◽  
G. Dresselhaus ◽  
P.C. Eklund
Keyword(s):  
Alkali Metal ◽  
Electronic Band Structure ◽  
Molecular Solids ◽  
Structure And Properties ◽  
Electronic Band ◽  
Structure And Property ◽  
Doped Fullerenes ◽  
Potential Applications ◽  
Metal Doped ◽  
Lattice Modes

A review of the structure and properties of fullerenes is presented. Emphasis is given to their behavior as molecular solids. The structure and property modifications produced by alkali-metal doping are summarized, including modification to the electronic structure, lattice modes, transport, and optical properties. Particular emphasis is given to the alkali-metal-doped fullerenes because of their importance as superconductors. A review of the structure and properties of fullerene-based graphene tubules is also given, including a model for their one-dimensional electronic band structure. Potential applications for fullerene-based materials are suggested.

The electronic band structure of silicon

Physica ◽  
1954 ◽  
Vol 3 (7-12) ◽  
pp. 967-970
Author(s):  
D JENKINS
Keyword(s):  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band

THE ELECTRONIC BAND STRUCTURE OF V3Ga AND V3Si

1972 ◽  
Vol 33 (C3) ◽  
pp. C3-223-C3-233 ◽  
Author(s):  
I. B. GOLDBERG ◽  
M. WEGER
Keyword(s):  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band

Rapid, Non-Toxic Synthesis of Beta Zeolites

2018 ◽  
Author(s):  
Felix Hemmann ◽  
Jonathan Hackebeil ◽  
Andreas Lißner ◽  
Florian Mertens
Keyword(s):  
Hydrofluoric Acid ◽  
Molecular Sieves ◽  
Toxic Chemicals ◽  
Lewis Acidity ◽  
Beta Zeolite ◽  
Seeded Growth ◽  
Related Research ◽  
Beta Zeolites ◽  
Growth Method ◽  
Fast Synthesis

Molecular sieves with beta zeolite topology are promising catalysts for various reactions as they exhibits extraordinary Lewis acidity. However, their industrial application and related research in academica is hindered because their synthesis is time consuming and typically involves toxic chemicals as hydrofluoric acid. Therefore, tetraethylammonium fluorid was tested as a non-toxic fluotide source for the synthesis of beta zeolites. In combination with the previously reported nano-seeded growth method, a fast synthesis of beta zeolites only involving non-toxic chemicals was possible. Synthesized zeolites show comparable selectivity in the Bayer-Villinger oxidation as conventional zeolites synthesized with hydrofluoric acid.<br>

Ab initio calculation on the Optical Properties of AA- Stacked two dimensional Graphene, Silicene, Germanene, and Stanene

2018 ◽  
Vol 1 (1) ◽  
pp. 46-50
Author(s):  
Rita John ◽  
Benita Merlin
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
Density Functional ◽  
Electronic Band Structure ◽  
Complex Refractive Index ◽  
Single Layer ◽  
Generalized Gradient ◽  
Electronic Band ◽  
Wide Range ◽  
Optical Region

In this study, we have analyzed the electronic band structure and optical properties of AA-stacked bilayer graphene and its 2D analogues and compared the results with single layers. The calculations have been done using Density Functional Theory with Generalized Gradient Approximation as exchange correlation potential as in CASTEP. The study on electronic band structure shows the splitting of valence and conduction bands. A band gap of 0.342eV in graphene and an infinitesimally small gap in other 2D materials are generated. Similar to a single layer, AA-stacked bilayer materials also exhibit excellent optical properties throughout the optical region from infrared to ultraviolet. Optical properties are studied along both parallel (||) and perpendicular ( ) polarization directions. The complex dielectric function (ε) and the complex refractive index (N) are calculated. The calculated values of ε and N enable us to analyze optical absorption, reflectivity, conductivity, and the electron loss function. Inferences from the study of optical properties are presented. In general the optical properties are found to be enhanced compared to its corresponding single layer. The further study brings out greater inferences towards their direct application in the optical industry through a wide range of the optical spectrum.

First principles calculation of structural, electronic and optical properties of (001) and (110) growth axis (InN)/(GaN)n superlattices

2021 ◽  
Vol 67 (1 Jan-Feb) ◽  
pp. 7
Author(s):  
B. Bachir Bouiadjra ◽  
N. Mehnane ◽  
N. Oukli
Keyword(s):  
Optical Properties ◽  
Density Functional ◽  
Electronic Band Structure ◽  
Scale Up ◽  
Energy Scale ◽  
First Principles Calculation ◽  
Full Potential ◽  
Electronic Band ◽  
Electronic And Optical Properties ◽  
Growth Axis

Based on the full potential linear muffin-tin orbitals (FPLMTO) calculation within density functional theory, we systematically investigate the electronic and optical properties of (100) and (110)-oriented (InN)/(GaN)n zinc-blende superlattice with one InN monolayer and with different numbers of GaN monolayers. Specifically, the electronic band structure calculations and their related features, like the absorption coefficient and refractive index of these systems are computed over a wide photon energy scale up to 20 eV. The effect of periodicity layer numbers n on the band gaps and the optical activity of (InN)/(GaN)n SLs in the both  growth axis (001) and (110) are examined and compared. Because of prospective optical aspects of (InN)/(GaN)n such as light-emitting applications, this theoretical study can help the experimental measurements.

scholarly journals Attosecond intra-valence band dynamics and resonant-photoemission delays in W(110)

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
S. Heinrich ◽  
T. Saule ◽  
M. Högner ◽  
Y. Cui ◽  
V. S. Yakovlev ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Electronic Band Structure ◽  
Photoelectric Effect ◽  
Final State ◽  
Electronic Band ◽  
Time Resolved ◽  
Resonant Photoemission ◽  
Pulse Trains ◽  
Electron Correlation Effects

AbstractTime-resolved photoelectron spectroscopy with attosecond precision provides new insights into the photoelectric effect and gives information about the timing of photoemission from different electronic states within the electronic band structure of solids. Electron transport, scattering phenomena and electron-electron correlation effects can be observed on attosecond time scales by timing photoemission from valence band states against that from core states. However, accessing intraband effects was so far particularly challenging due to the simultaneous requirements on energy, momentum and time resolution. Here we report on an experiment utilizing intracavity generated attosecond pulse trains to meet these demands at high flux and high photon energies to measure intraband delays between sp- and d-band states in the valence band photoemission from tungsten and investigate final-state effects in resonant photoemission.

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