scholarly journals Single-Walled Carbon Nanotube Synthesis Yield Variation in a Horizontal Chemical Vapor Deposition Reactor

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3293
Author(s):  
Sung-Il Jo ◽  
Goo-Hwan Jeong

The controlled synthesis of single-walled carbon nanotubes (SWNTs) is essential for their industrial application. This study investigates the synthesis yield of SWNTs, which depends on the positions of the samples on a horizontal chemical vapor deposition (CVD) system. Methane and Fe thin films were used as the feedstock and catalyst for SWNTs synthesis, respectively. A high-resolution scanning electron microscope was used to examine the synthesis yield variation of the SWNTs along the axial distance of the reactor. The morphology and crystallinity of the fabricated SWNTs were evaluated by atomic force microscopy and Raman spectroscopy, respectively. We observed that the highest synthesis yield of the SWNTs was obtained in the rear region of the horizontal reactor, and not the central region. These results can be applied to the synthesis of various low-dimensional nanomaterials, such as semiconducting nanowires and transition metal dichalcogenides, especially when a horizontal CVD chamber is used.

2020 ◽  
Vol 15 (6) ◽  
pp. 673-678
Author(s):  
Soo-Young Kang ◽  
Gil-Sung Kim ◽  
Min-Sung Kang ◽  
Won-Yong Lee ◽  
No-Won Park ◽  
...  

Transition metal dichalcogenides (TMDs) are layered two-dimensional (2D) semiconductors and have received significant attention for their potential application in field effect transistors (FETs), owing to their inherent characteristics. Among the various reported 2D TMD materials, monolayer (ML) molybdenum disulfide (MoS2) is being considered as a promising channel material for the fabrication of future transistors with gate lengths as small as ∼1 nm. In this work, we present chemical vapor deposition-grown triangular ML MoS2 with a lateral size of ∼22 μm and surface coverage of ∼47%, as well as a PMMA-based wet transfer process for depositing the as-grown triangular ML MoS2 flakes onto a SiO2 (∼100 nm)/p++-Si substrate. Additionally, we demonstrate the fabrication of an n-type MoS2-based FET device and study its electrical characteristics as a function of the gate voltage. Our FET device shows an excellent on/off ratio of ∼106, an off-state leakage current of less than 10– 12 A, and a field effect mobility of ∼10.4 cm2/Vs at 300 K.


Nanoscale ◽  
2019 ◽  
Vol 11 (36) ◽  
pp. 17065-17072
Author(s):  
Peijian Wang ◽  
Siyuan Luo ◽  
Lincoln Boyle ◽  
Hao Zeng ◽  
Shaoming Huang

We report controlled fractal growth of atomically thin transition metal dichalcogenides (TMDCs) by chemical vapor deposition, with morphological evolution from dendritic to triangular.


Nanoscale ◽  
2021 ◽  
Author(s):  
Anh Tuan Hoang ◽  
Kairui Qu ◽  
Xiang Chen ◽  
Jong-Hyun Ahn

This article reviews the latest advances in the synthesis of wafer-scale thin films using chemical vapor deposition and solution-based methods and various device applications.


2019 ◽  
Vol 1 (3) ◽  
pp. 953-960 ◽  
Author(s):  
Mei Er Pam ◽  
Yumeng Shi ◽  
Junping Hu ◽  
Xiaoxu Zhao ◽  
Jiadong Dan ◽  
...  

Transition metal oxide powders have been widely used as the growth precursors for monolayer transition metal dichalcogenides (TMDCs) in chemical vapor deposition (CVD).


Sign in / Sign up

Export Citation Format

Share Document