The Effect of Doping in Split-Well Direct-Phonon THz Quantum-Cascade Laser Structures

We have studied the effect of doping on the temperature performance of a split-well (SW) direct-phonon (DP) terahertz (THz) quantum-cascade laser (QCL) scheme supporting a clean three-level system. Achieving a system that is as close as possible to a clean n-level system proved to be the strategy that led to the best temperature performance in THz-QCLs. We expected to obtain a similar improvement to that observed in resonant-phonon (RP) schemes after increasing the carrier concentration from 3 × 1010 cm−2 to 6 × 1010 cm−2. Our goal was to improve the temperature performance by increasing the doping, ideally the results should have improved. To our surprise, in the devices we checked, the results show the contrary. Although an increase in doping had previously shown a positive effect in RP schemes, our results indicated that this does not happen with SW–DP devices. However, we observed a significant increase in gain broadening and a reduction in the dephasing time as the doping and temperature increased. We attribute these effects to enhanced ionized-impurity scattering (IIS). The observation and study of effects related to dephasing included in our experimental work have previously only been possible via simulation.