scholarly journals Morphological, Electrical, and Chemical Characteristics of Poly(sodium 4-styrenesulfonate) Coated PVDF Ultrafiltration Membranes after Plasma Treatment

Polymers ◽  
2019 ◽  
Vol 11 (10) ◽  
pp. 1689 ◽  
Author(s):  
Sandoval-Olvera ◽  
González-Muñoz ◽  
Díaz ◽  
Maroto-Valiente ◽  
Ochoa ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Vinylidene Fluoride ◽  
Electrical Impedance Spectroscopy ◽  
Morphological Properties ◽  
X Ray ◽  
Force Microscopy ◽  
Poly Vinylidene Fluoride ◽  
Liquid Displacement ◽  
Positively Charged

A commercial ultrafiltration (UF) membrane (HFM-183 de Koch Membrane Systems) made of poly(vinylidene fluoride) (PVDF), was recovered with a negatively-charged polyelectrolyte (poly(sodium 4-styrenesulfonate)) (PSS), and the effects on its electric, chemical, and morphological properties were analyzed. Atomic force microscopy (AFM), liquid–liquid displacement porometry, Electrical Impedance Spectroscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy were used to investigate the modifications induced by the deposition of PSS on the PVDF positively-charged membrane and after its treatment by a radio frequency Ar-plasma. These techniques confirmed a real deposition and posterior compaction of PSS with increasing roughness and decreasing pore sizes. The evolution of the electric resistances of the membranes confirmed crosslinking and compaction with shielding of the sulfonated groups from PSS. In this way, a membrane with a negatively-charged active layer and a pore size which was 60% lower than the original membrane was obtained. The composition of the additive used by manufacturers to modify PVDF to make it positively charged was obtained by different procedures, all of which depended upon the results of X-ray photoelectron spectroscopy, leading to fairly consistent results. This polymer, carrying positive charges, contains quaternary nitrogen, as confirmed by XPS. Moreover, Raman spectroscopy confirmed that PVDF changes from mostly the to the α phase, which is more stable as a substrate for the deposited PSS. The aim of the tested modifications was to increase the retention of divalent anions without reducing permeability.

An approach to durable poly(vinylidene fluoride) thin film loudspeaker

2003 ◽  
Vol 18 (12) ◽  
pp. 2904-2911 ◽  
Author(s):  
C.S. Lee ◽  
J.Y. Kim ◽  
D.E. Lee ◽  
J. Joo ◽  
S. Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Vinylidene Fluoride ◽  
X Ray ◽  
Force Microscopy ◽  
Low Surface Energy ◽  
Oxide Electrodes ◽  
Atomic Force ◽  
Poly Vinylidene Fluoride

The piezoelectric poly(vinylidene fluoride) (PVDF) surface possessing low surface energy was modified by the ion-assisted-reaction (IAR) method for the application of thin film speaker. The IAR-treated hydrophilic PVDF surface was investigated using atomic force microscopy and x-ray photoelectron spectroscopy. The adhesion strength between various types of electrodes and the film was dramatically improved due to the hydrophilic functional groups, such as –C–O–, –(C=O)–, –(C=O)–O–, and so forth. A durable loudspeaker film was fabricated by enhancing the adhesion between the screen-printed poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) (PEDOT/PSS) and the modified PVDF films. The PVDF speaker film with the PEDOT/PSS electrode showed higher durability, flatter sound pressure level characteristics, and easier processability compared to metals or indium tin oxide electrodes.

Study of the combined carbonization of poly(vinylidene fluoride) by X-Ray photoelectron spectroscopy

2017 ◽  
Vol 11 (5) ◽  
pp. 927-932 ◽  
Author(s):  
V. E. Zhivulin ◽  
N. A. Moskvina ◽  
I. V. Gribov ◽  
V. P. Andreychuk ◽  
V. M. Morilova ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Vinylidene Fluoride ◽  
X Ray ◽  
Poly Vinylidene Fluoride

Phase Transition in Poly(Vinylidene Fluoride) Investigated with Micro-Raman Spectroscopy

2005 ◽  
Vol 59 (3) ◽  
pp. 275-279 ◽  
Author(s):  
C. J. L. Constantino ◽  
A. E. Job ◽  
R. D. Simões ◽  
J. A. Giacometti ◽  
V. Zucolotto ◽  
...  
Keyword(s):  
Phase Transition ◽  
Raman Spectroscopy ◽  
Vinylidene Fluoride ◽  
Raman Band ◽  
X Ray Diffraction ◽  
X Ray ◽  
Micro Raman Spectroscopy ◽  
Β Phase ◽  
Α Phase ◽  
Poly Vinylidene Fluoride

The phase transition from the non-polar α-phase to the polar β-phase of poly(vinylidene fluoride) (PVDF) has been investigated using micro-Raman spectroscopy, which is advantageous because it is a nondestructive technique. Films of α-PVDF were subjected to stretching under controlled rates at 80 °C, while the transition to β-PVDF was monitored by the decrease in the Raman band at 794 cm−1 characteristic of the α-phase, along with the concomitant increase in the 839 cm−1 band characteristic of the β-phase. The α→β transition in our PVDF samples could be achieved even for the sample stretched to twice (2×-stretched) the initial length and it did not depend on the stretching rate in the range between 2.0 and 7.0 mm/min. These conclusions were corroborated by differential scanning calorimetry (DSC) and X-ray diffraction experiments for PVDF samples processed under the same conditions as in the Raman scattering measurements. Poling with negative corona discharge was found to affect the α-PVDF morphology, improving the Raman bands related to this crystalline phase. This effect is minimized for films stretched to higher ratios. Significantly, corona-induced effects could not be observed with the other experimental techniques, i.e., X-ray diffraction and infrared spectroscopy.

Graphene Growth on SiC and Metal Surfaces by Solid Source Carbon Deposition

2010 ◽  
Vol 1246 ◽  
Author(s):  
W. C. Mitchel ◽  
J. H. Park ◽  
H. E. Smith ◽  
L. Grazulis
Keyword(s):  
Thermal Decomposition ◽  
Raman Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Carbon Flux ◽  
Carbon Deposition ◽  
Carbon Sources ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Graphene Films

AbstractGraphene has been grown by direct deposition of carbon from solid sources on both SiC and Ta films on SiC in an MBE environment. Carbon fluxes were obtained from thermally evaporated C60 and from a heated graphite filament. The graphene films were characterized by Raman spectroscopy, X-ray photoelectron spectroscopy and atomic force microscopy. Graphene films on Si-face SiC grown by carbon source MBE (CSMBE) were compared with graphene grown by the standard epitaxial graphene process using SiC thermal decomposition. CSMBE on SiC was found to grow at lower temperatures (1200°C) and to have fewer pits and a more uniform surface. Uniform graphene films were found to grow on Ta films after exposure to both carbon sources at 1200°C but Raman measurements showed no signs of graphene on films exposed to the same temperature without a carbon flux.

First Stages of the Platinum Electroless Deposition on Silicon (100) from Hf Solutions.

1995 ◽  
Vol 402 ◽  
Author(s):  
P. Gorostiza ◽  
J. Servat ◽  
J. R. Morante ◽  
F. Sanz
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electroless Deposition ◽  
Chemical Nature ◽  
Metal Salt ◽  
Morphological Properties ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Influence Of Ph

AbstractElectroless metal deposition based upon the addition of fluoride anions to the metal salt aqueous solution have been developed recently on the assumption that the cleanness of the substrate will be guaranteed and the deposit will be of high purity. In this work, platinum is deposited on silicon (100) from fluorinated solution at two different pH's. The influence of pH is analyzed using Tapping Mode Atomic Force Microscopy (TMAFM) to characterize the main morphological properties of the deposit. Combined TMAFM and Transmission Electron Microscopy (TEM) images are presented and X-ray Photoelectron Spectroscopy (XPS) allows us to identify the chemical nature of the silicon surface.

Formation of the YBa2Cu2NbOy phase in thin films

2009 ◽  
Vol 24 (1) ◽  
pp. 212-216
Author(s):  
Srinivas Sathiraju ◽  
Paul N. Barnes ◽  
Robert A. Wheeler
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Micro Raman Spectroscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
New Phase

We report the systematic substitution of Nb at the Cu1 site of YBa2Cu3Oy in thin films to form a new phase of YBa2Cu2NbO8. These films were deposited on SrTiO3(100) crystals using pulsed laser deposition and deposited at an optimal temperature of 850 °C. Films were characterized using x-ray diffraction (XRD), atomic force microscopy, x-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, and transmission electron microscopy. XRD of these films indicate c-axis oriented YBa2Cu2NbOy formation. XPS and micro-Raman spectroscopy analysis suggests Cu exists in the +2 state.

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Uv Radiation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

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